The present disclosure relates to an apparatus and a method for improving film thickness uniformity, wherein a PECVD machine with twin chambers comprise a wafer heating platform, which is set to be a rotating platform with programmable speed control, by setting rotating speed of the platform, wafer is rotated for integral rounds within process time, so that a RF overlap between the twin chambers make consistent influence on edge regions of the wafer, and film around the wafer is evenly distributed, which not only eliminate abrupt change of film thickness caused by the RF overlap, but also reduce film thickness differences between edge regions and central regions of the film by a characteristic that the RF overlap improves film deposition rate, so as to ensure the film thickness more evenly in the range of the whole wafer.

A forming method of a component for use in a plasma processing apparatus includes irradiating, while supplying a source material of a first ceramic and a source material of a second ceramic different from the first ceramic, an energy beam to the source material of the first ceramic and the source material of the second ceramic.

A plasma generating device includes a plasma sprinkler head and an outer housing, wherein the plasma sprinkler head includes a case and a plasma generating assembly disposed on the case and having a plasma nozzle. The plasma nozzle is located on a side of the case. The outer housing is disposed on the case and is located around the plasma nozzle. In this way, when the plasma nozzle sprays the plasma, the plasma generating device of the present invention could effectively avoid introducing too much external air to affect a quality of the plasma.

A chemical vapor deposition (CVD) system may include a chamber, a susceptor provided in the chamber to support a substrate, a gas distribution part provided over the susceptor, a first ground strap bar provided on a bottom inner surface of the chamber and electrically connected to the chamber, a second ground strap bar provided on a bottom surface of the susceptor and electrically connected to the susceptor, and a plurality of ground straps electrically connected to the first and second ground strap bars, each of the plurality of ground straps including two opposite portions that are fastened to the first and second ground strap bars, respectively.

An apparatus for measuring contamination on a critical surface of a part is provided. A vessel for mounting the part is provided. An inert gas source is in fluid connection with the vessel and adapted to provide an inert gas to the vessel. At least one diffuser receives the inert gas from the vessel, wherein the critical surface of the part is exposed to the inert gas when the part is mounted in the vessel. At least one analyzer is adapted to receive inert gas from the at least one diffuser and measures contaminants in the inert gas.

An apparatus for confining plasma within a plasma processing chamber is provided. The plasma processing chamber includes a lower electrode for supporting a substrate and an upper electrode disposed over the lower electrode. The apparatus is a confinement ring that includes a lower horizontal section extending between an inner lower radius and an outer radius of the confinement ring. The lower horizontal section includes an extension section that bends vertically downward at the inner lower radius, and the lower horizontal section further includes a plurality of slots. The confinement ring further includes an upper horizontal section extending between an inner upper radius and the outer radius of the confinement ring and a vertical section that integrally connects the lower horizontal section with the upper horizontal section. The extension section of the lower horizontal section is configured to surround the lower electrode when installed in the plasma processing chamber.

A component for use in a plasma processing chamber is provided. The component comprises a component body. A plasma facing surface of the component body is adapted to face a plasma in the plasma processing chamber. The plasma facing surface comprises 1) a layer of silicon doped with a dopant wherein the dopant is at least one of carbon, boron, tungsten, molybdenum, and tantalum, wherein the dopant has a concentration that ranges from 0.01% to 50% by mole percentage, or 2) a layer of carbon doped with a dopant wherein the dopant is at least one of silicon, boron, tungsten, molybdenum, and tantalum, wherein the dopant has a concentration that ranges from 0.01% to 50% by mole percentage, or 3) a layer consisting essentially of boron, or 4) a layer consisting essentially of tantalum.

A component for use in a plasma processing chamber system is START provided. The component for use in a processing chamber system comprises a bulk component body comprising magnesium aluminum oxynitride and sintering aids. The sintering aids comprise at least one of yttria, yttrium aluminate, rare earth metal oxide, and rare earth metal aluminate.

The transporting apparatus of the present invention comprises an end effector including a hand and a plurality of vacuum holes installed in the hand; and a carrier located on the hand and for supporting a consumable part, wherein the carrier comprises one side for supporting a consumable part, the other surface facing the hand of the end effector, and a plurality of support blocks installed on the other surface and corresponding to the plurality of vacuum holes, wherein an inner space communicating with the vacuum hole is installed in the plurality of support blocks, and the inner space is evacuated by negative pressure provided from the plurality of vacuum holes.

The disclosure provides a substrate processing apparatus including an electrostatic chuck disposed on a base to support a substrate, a focus ring disposed on the base to surround an outer circumference of the electrostatic chuck, and a lift pin configured to lift the focus ring, wherein the focus ring includes a lower ring and an upper ring disposed on the lower ring, the upper ring and/or the lower ring are configured to be simultaneously lifted according to a height of the lift pin, the lower ring includes an insertion groove, the upper ring includes a main body unit, a first protrusion extending downward from the main body unit and inserted into the insertion groove of the lower ring, and a second protrusion extending downward from the main body unit, contacting an outer circumference of the lower ring, and directly contacting the lift pin.