A transfer chamber for a processing system suitable for processing a plurality of substrates and a method of using the same is provided. The transfer chamber includes a lid, a bottom disposed opposite the lid, a plurality of sidewalls sealingly coupling the lid to the bottom and defining an internal volume, wherein the plurality of sidewalls form the faces of a dodecagon. An opening is formed in each of the faces, wherein the opening is configured for a substrate to pass therethrough. A transfer robot is disposed in the internal volume, wherein the transfer robot has effectors configured to support the substrate through one opening to another opening.

A plasma processing apparatus including: a processing chamber in which a sample is plasma-processed; a radio frequency power supply configured to supply a radio frequency power for generating plasma; a first radio frequency power supply ; a second radio frequency power supply configured to supply, a second radio frequency power having a frequency higher than a frequency of the first radio frequency power supplied; and a control device configured to control the first radio frequency power supply and the second radio frequency power supply such that the supply of one radio frequency power is stopped while the other radio frequency power is supplied, in which the frequency of the first radio frequency power and the frequency of the second radio frequency power are defined based on a full width at half maximum of a peak value of an ion energy distribution with respect to the frequency.

One process that may be used to remove material from a surface is ion etching. In certain cases, ion etching involves delivery of both ions and a reactive gas to a substrate. The disclosed embodiments permit local high pressure delivery of reactive gas to a substrate while maintaining a much lower pressure on portions of the substrate that are outside of the local high pressure delivery area. The low pressure is achieved by confining the high pressure reactant delivery to a small area and vacuuming away excess reactants and byproducts as they leave this small area and before they enter the larger substrate processing region. The disclosed techniques may be used to increase throughput while minimizing deleterious collisions between ions and other species present in the substrate processing region.

A method is provided. The method includes introducing a process gas into an interior space of a processing chamber through a gas inlet port, wherein a substrate is supported within the interior space. The process gas is evacuated from the interior space by a vacuum source through an exhaust port in fluid communication with the interior space of the process chamber. A flow of the process gas is controlled by supporting an exhaust baffle within a flow path of the process gas being evacuated from the interior space through the exhaust port.

A vacuum exhaust method is for decreasing a pressure in a processing chamber in which a mounting table configured to mount thereon a substrate is provided by using a gas exhaust unit. The vacuum exhaust method includes mounting a non-evaporated getter (NEG) on the mounting table, and adsorbing an active gas in the processing chamber on the NEG mounted on the mounting table. In the adsorbing the active gas, the NEG is maintained at a predetermined temperature.

Generally, examples described herein relate to methods and processing systems for forming isolation structures (e.g., shallow trench isolations (STIs)) between fins on a substrate. In an example, fins are formed on a substrate. A liner layer is conformally formed on and between the fins. Forming the liner layer includes conformally depositing a pre-liner layer on and between the fins, and densifying, using a plasma treatment, the pre-liner layer to form the liner layer. A dielectric material is formed on the liner layer.

A plasma processing apparatus includes a processing chamber, a carrier wave group generation unit and a plasma generation unit. The carrier wave group generation unit is configured to generate a carrier wave group including a plurality of carrier waves having different frequencies in a frequency domain. The carrier wave group is represented by an amplitude waveform in which a first peak and a second peak of which absolute value is smaller than an absolute value of the first peak alternately appear in a time domain. The plasma generation unit is configured to generate a plasma in the processing chamber by using the carrier wave group.

An additive-containing aluminium nitride film is plasma etched. The additive-containing aluminium nitride film contains an additive element selected from scandium, yttrium or erbium. A workpiece is placed upon a platen within a plasma chamber. The workpiece includes a substrate having an additive-containing aluminium nitride film deposited thereon and a mask disposed upon the additive-containing aluminium nitride film, which defines at least one trench. A first etching gas is introduced into the chamber with a first flow rate, a second etching gas is introduced into the chamber with a second flow rate, and a plasma is established within the chamber to etch the additive-containing aluminium nitride film exposed within the trench. The first etching gas comprises boron trichloride and the second etching gas comprises chlorine. A ratio of the first flow rate to the second flow rate is greater than or equal to 1:1.

A vapor phase growth method of an embodiment is a vapor phase growth method using a vapor phase growth apparatus including a reactor, an exhaust pump, a pressure control valve, and an exhaust pipe. The vapor phase growth method includes: loading a first substrate into the reactor, heating the first substrate, supplying a process gas, and forming a silicon carbide film on a surface of the first substrate and depositing a by-product containing carbon in the first portion or the second portion by adjusting a pressure in the reactor by controlling the pressure control valve; unloading the first substrate from the reactor; removing the by-product by supplying a gas including a gas containing fluorine to the exhaust pipe by controlling a pressure in the exhaust pipe; and then loading a second substrate into the reactor to form a silicon carbide film on a surface of the second substrate.

Methods of passivating at least one facet of a multilayer waveguide structure can include: cleaning, in a first chamber of a multi-chamber ultra-high vacuum (UHV) system, a first facet of the multilayer waveguide structure; transferring the cleaned multilayer waveguide structure from the first chamber to a second chamber of the multi-chamber UHV system; forming, in the second chamber, a first single crystalline passivation layer on the first facet; transferring the multilayer waveguide structure from the second chamber to a third chamber of the multi-chamber UHV system; and forming, in the third chamber, a first dielectric coating on the first single crystalline passivation layer, in which the methods are performed in an UHV environment of the multi-chamber UHV system without removing the multilayer waveguide structure from the UHV environment.