An apparatus for atomic scale processing is provided. The apparatus may include a reactor and an inductively coupled plasma source. The reactor may have inner and outer surfaces such that a portion of the inner surfaces define an internal volume of the reactor. The internal volume of the reactor may contain a fixture assembly to support a substrate wherein the partial pressure of each background impurity within the internal volume may be below 10.sup.−6 Torr to reduce the role of said impurities in surface reactions during atomic scale processing.

Methods of semiconductor processing may include performing a first plasma treatment within a processing chamber to remove a first carbon-containing material. The methods may include performing a second plasma treatment within the processing chamber to remove a first silicon-containing material. The methods may include depositing a second silicon-containing material on surfaces of the processing chamber. The methods may include depositing a second carbon-containing material overlying the second silicon-containing material.

Sealing various machined component parts used in plasma etching chambers using an Atomic Layer Deposition (ALD) coating. By sealing the component parts with the ALD layer, surface erosion/etch caused by repeated exposure to plasma during workpiece fabrication is eliminated or significantly mitigated. As a result, unwanted particle generation, caused by erosion, is eliminated or significantly reduced, preventing contamination within the plasma etching chamber.

Capacitive sensors and capacitive sensing data integration for plasma chamber condition monitoring are described. In an example, a plasma chamber monitoring system includes a plurality of capacitive sensors, a capacitance digital converter, and an applied process server coupled to the capacitance digital converter, the applied process server including a system software. The capacitance digital converter includes an isolation interface coupled to the plurality of capacitive sensors, a power supply coupled to the isolation interface, a field-programmable gate-array firmware coupled to the isolation interface, and an application-specific integrated circuit coupled to the field-programmable gate-array firmware.

The present disclosure provides a thin-film-deposition equipment with double-shaft shielding device, which includes a reaction chamber, a carrier and a double-shaft shielding device. The double-shaft shielding device includes a first-connecting arm, a second-connecting arm, a first-shield member, a second-shield member, a first driver and a second driver. The first driver is connected to the first-shield member via the first-connecting arm, and the second driver is connected to the second-shield member via the second-connecting arm, for respectively driving and swinging the two shield members to move in opposite directions via the two connecting arms. Thereby, during a cleaning process of the thin-film-deposition equipment, the two drivers swing the two shield members toward each other into a shielding state for covering the carrier, such that to effectively prevent removed pollutants from polluting the carrier during.

An alignment module for positioning a mask on a substrate comprises a mask stocker, an alignment stage, and a transfer robot. The mask stocker houses a mask cassette that stores a plurality of masks. The alignment stage is configured to support a carrier and a substrate. The transfer robot is configured to transfer one of the one or more masks from the mask stocker to the alignment stage and position the mask over the substrate. The alignment module may be part of an integrated platform having one or more transfer chambers, a factory interface having a substrate carrier chamber and one or more processing chambers. A carrier may be coupled to a substrate within the substrate carrier chamber and moved between the processing chambers to generate a semiconductor device.

The present invention provides a method for cleaning a component for use in an ultra-high vacuum. The method may comprise the steps of placing the component to be cleaned in a vacuum furnace chamber; plasma cleaning the component at a temperature of greater than about 80° C.; and evacuating the chamber to a pressure of less than about 10E-5 mbar. Apparatus for performing such methods and kits comprising said components are also provided.

An embodiment low contamination chamber includes a gas inlet, an adjustable top electrode, and an adjustable bottom electrode. The low contamination chamber is configured to adjust a distance between the adjustable top electrode and the adjustable bottom electrode in response to a desired density of plasma and a measured density of plasma measured between the adjustable top electrode and the adjustable bottom electrode during a surface activation process. The low contamination chamber further includes an outlet.

Systems and methods for cleaning a showerhead are described. One of the systems includes a support section and a press plate located above the support section to be supported by the support section. The system further includes a cleaning layer located above the press plate. The cleaning layer moves to clean a showerhead. The support section contacts an arm of a spindle assembly for movement with movement of the arm.

A sputtering chamber component including a front surface, a back surface opposite the front surface, and a sputter trap formed on at least a portion of the back surface, and a coating of metallic particles formed on the sputter trap. The coating has a thickness from about 0.025 mm to about 2.54 mm (0.001 inches to about 0.1 inches) and is substantially free of impurities, and the particles of the coating are substantially diffused.