Methods and systems for forming a structure are disclosed. Exemplary methods include providing a substrate comprising a gap within a reaction chamber, selectively depositing a first material comprising molybdenum on a first surface within the gap relative to a second surface within the gap to at least partially fill the gap, and after the step of selectively depositing the first material comprising molybdenum, conformally depositing a second material comprising molybdenum over the first surface and the second surface.

A method is disclosed, which comprises estimating a first value of a parameter of a component, prior to a use of the component in a reactor. In an example, the parameter of the component is to change during the use of the component in the reactor. The component may be treated, subsequent to the use of the component in the reactor. A second value of the parameter of the component may be estimated, subsequent to treating the component. The second value may be compared with the first value, where a reuse of the component in the reactor is to occur in response to the second value being within a threshold range of the first value.

A surface treatment device includes a body and a plasma source disposed within the body. The plasma source includes a first inlet through the body and an ionization wave generator adjacent the first inlet to receive feedstock gas via the first inlet. The ionization wave generator includes a dielectric tube that necks down to define an elongated throat. The surface treatment device also includes a second inlet through the body and an expansion nozzle disposed within the body downstream of the second inlet. The second inlet is disposed at the elongated throat to provide further feedstock gas.

A substrate processing apparatus for polishing a substrate by pressing the substrate against a polishing pad, comprises: an acoustic sensor having a sensor body that detects polishing sound of the substrate and outputs the polishing sound as an acoustic signal, and a cover member that houses the sensor body; an end point detection unit that detects an end point of polishing of the substrate from the acoustic signal; and a gas supply device that supplies a gas into the cover member so as to prevent adhesion of moisture (water droplets and water vapor) to the sensor body. The gas supply device is connected to the sensor body on an opposite side of a detection surface for the polishing sound, a groove for passing the gas from the gas supply device is formed in the cover member, and a plurality of micro openings for passing the gas from the gas supply device are formed on a waterproof sheet.

An apparatus for measuring contamination on a critical surface of a part is provided. A vessel for mounting the part is provided. An inert gas source is in fluid connection with the vessel and adapted to provide an inert gas to the vessel. At least one diffuser receives the inert gas from the vessel, wherein the critical surface of the part is exposed to the inert gas when the part is mounted in the vessel. At least one analyzer is adapted to receive inert gas from the at least one diffuser and measures contaminants in the inert gas.

The invention provides a collection assembly and a semiconductor pre-cleaning chamber, which relate to the semiconductor processing apparatus field. The collection assembly is configured to collect particle impurities in the semiconductor pre-cleaning chamber, and includes a protection plate and a collection plate arranged at an interval in the semiconductor pre-cleaning chamber. The protection plate is annular. A plurality of first through-holes are arranged at the protection plate and configured for the process gas in the semiconductor pre-cleaning chamber to pass through. The collection plate is located on a side of an air outlet end of the first through-holes and configured to capture at least a part of the particle impurities in the semiconductor pre-cleaning chamber passing through the first through-holes.

Capacitive sensors and capacitive sensing data integration for plasma chamber condition monitoring are described. In an example, a plasma chamber monitoring system includes a plurality of capacitive sensors, a capacitance digital converter, and an applied process server coupled to the capacitance digital converter, the applied process server including a system software. The capacitance digital converter includes an isolation interface coupled to the plurality of capacitive sensors, a power supply coupled to the isolation interface, a field-programmable gate-array firmware coupled to the isolation interface, and an application-specific integrated circuit coupled to the field-programmable gate-array firmware.

Some implementations described herein provide a shutter disc for use during a conditioning process within a processing chamber of a deposition tool. The shutter disc described herein includes a material having a wave-shaped section to reduce heat transfer to the shutter disc and to provide relief from thermal stresses. Furthermore, the shutter disc includes a deposition of a thin-film material on a backside of the shutter disc, where a diameter of the shutter disc causes a spacing between an inner edge of the thin-film material and an outer edge of a substrate support component. The spacing prevents an accumulation of material between the thin film material and the substrate support component, reduces tilting of the shutter disc due to a placement error, and reduces heat transfer to the shutter disc.

Some implementations described herein provide a shutter disc for use during a conditioning process within a processing chamber of a deposition tool. The shutter disc described herein includes a material having a wave-shaped section to reduce heat transfer to the shutter disc and to provide relief from thermal stresses. Furthermore, the shutter disc includes a deposition of a thin-film material on a backside of the shutter disc, where a diameter of the shutter disc causes a spacing between an inner edge of the thin-film material and an outer edge of a substrate support component. The spacing prevents an accumulation of material between the thin film material and the substrate support component, reduces tilting of the shutter disc due to a placement error, and reduces heat transfer to the shutter disc.

Systems and methods for cleaning an edge ring pocket are described herein. One of the methods includes providing one or more process gases to a plasma chamber, supplying a low frequency (LF) radio frequency (RF) power to an edge ring that is located adjacent to a chuck of the plasma chamber. The LF RF power is supplied while the one or more process gases are supplied to the plasma chamber to maintain plasma within the plasma chamber. The supply of the LF RF power increases energy of plasma ions near the edge ring pocket to remove residue in the edge ring pocket. The LF RF power is supplied during the time period in which a substrate is not being processed within the plasma chamber.