An apparatus for treating a substrate includes a process chamber having a process space, a support unit that supports the substrate in the process space, a lift pin module having a lift pin that moves a consumable component on the support unit in an up/down direction, and a measurement unit that measures a degree of wear of the consumable component and has a light receiving member that receives light emitted in a horizontal direction.

The inventive concept provides a substrate treating method. The substrate treating method includes treating an edge region of a substrate using a plasma; and acquiring an image to be determined by imaging a substrate on which a treatment has been completed in the treating the edge region, comparing the image to be determined with an image stored in a database, and determining whether a substrate treated in the treating the edge region is defective or not, and wherein the image stored in the database is a defective image of a substrate which has been determined as defective, which is previously stored in the database in the acquiring the image to be determined.

An apparatus for treating a substrate includes a process chamber having a process space, a support unit that supports the substrate in the process space, a lift pin module having a lift pin that moves a consumable component on the support unit in an up/down direction, and a measurement unit that measures a degree of wear of the consumable component and has a light receiving member that receives light emitted in a horizontal direction.

The inventive concept relates to an apparatus and a method for processing a substrate. In an embodiment, the apparatus includes a process chamber having a processing space inside, a support unit that supports the substrate in the processing space, a gas supply unit that supplies a process gas into the processing space, and a plasma source that generates plasma from the process gas. The support unit includes a support on which the substrate is placed, an edge ring around the substrate placed on the support, an impedance adjustment member provided below the edge ring, and a temperature adjustment member that variably adjusts temperature of the impedance adjustment member.

Embodiments of the systems and methods herein are directed towards forming, via ALD or CVD, a protective film in-situ on a plurality of interior components of a process chamber. The interior components coated with the protective film include a chamber sidewall, a chamber bottom, a substrate support pedestal, a showerhead, and a chamber top. The protective film can be of various compositions including amorphous Si, carbosilane, polysilicon, SiC, SiN, SiO.sub.2, Al.sub.2O.sub.3, AlON, HfO.sub.2, or Ni.sub.3Al, and can vary in thickness from about 80 nm to about 250 nm.

An aluminum gas distribution plate refurbishment system combines a multi-beam inductively coupled plasma (AP-ICP) torch and vacuum discharge chuck. Plasma beams are employed to clean and restore to service the many gas flow passages in aluminum type gas distribution plates. Several parallel supersonic plasma beams of uniform density are produced from a single upper and lower AP-ICP plasma reactor arranged in totem pole that are driven by two pairs of opposing spiral planar RF induction RF antennas. These plasma beams are focused inside the gas flow passages to etch, heat, and deposit nanoparticles within. The vacuum discharge chuck includes a capacitively coupled plasma (CCP) reactor to generate a positive species discharge immediately beneath the gas distribution plates. This overcomes and undoes a Debye Sheathing effect, a electron-fed negative space charge blocking occurring above, and unknots any congested plasma beams in the gas flow passages.

The present disclosure relates to methods of processing a semiconductor substrate in a processing chamber, such as a chemical vapor deposition chamber. The chemical vapor deposition chamber includes a spindle mechanism that cooperates with one or more carrier ring forks to move the semiconductor substrate from one station to another station. The methods include monitoring one or more spindle operation parameters and carrying out one or more maintenance steps on the spindle mechanism based on the results of monitoring the one or more spindle operation parameters. The monitored spindle operation parameters provide an indication of undesirable vibration of the semiconductor substrates in the processing chamber. The vibration of the semiconductor substrates in the processing chamber is undesirable because it promotes generation of unwanted particles that deposit onto a surface of the semiconductor substrate.

A substrate processing system includes: a processing module including a processing chamber and a substrate support provided inside the processing chamber, the substrate support having a substrate support surface and a ring support surface for supporting a ring; a vacuum transfer module connected to the processing module and including a transfer robot for transferring the ring; a ring storage module connected to the vacuum transfer module to store the ring; a temperature adjuster provided in the ring storage module to adjust a temperature of the ring; a controller that sequentially execute: adjusting the temperature of the ring by the temperature adjuster before loading the ring into the processing module; and transferring, by the transfer robot, the ring, the temperature of which has been adjusted by the temperature adjuster, so as to place the ring on the substrate support.

A plasma processing method is performed in a state where a focus ring is disposed on a supporting table to surround an edge of a substrate by a plasma processing apparatus. The plasma processing apparatus includes a chamber and the supporting table provided in the chamber and configured to support the substrate mounted thereon. The plasma processing method includes forming an organic film on the focus ring to reduce a difference between a position of an upper surface of the focus ring in a vertical direction and a reference position, and performing plasma processing on the substrate after the formation of the organic film.

The inventive concept relates to an apparatus for processing a substrate. In an embodiment, the apparatus includes a process chamber having a processing space inside, a support unit that supports the substrate in the processing space, a gas supply unit that supplies a process gas into the processing space, and a plasma source that generates plasma from the process gas. The support unit includes a support on which the substrate is placed, an edge ring around the substrate placed on the support, an impedance adjustment member provided below the edge ring, and a temperature adjustment member that variably adjusts temperature of the impedance adjustment member.