A plasma cleaning apparatus includes a metal chamber, a gate assembly, a dielectric, and a high voltage electrode. The metal chamber is connected to a vacuum tube connecting the process chamber and the vacuum pump, and is provided with a first opening. The gate assembly includes a gate support fixed to the metal chamber around the first opening and having a second opening, and a gate coupled to the gate support and having a first position closing the second opening and a second position opening the second opening switchable with each other. The dielectric is coupled to the outside of the gate support around the second opening, and the high voltage electrode is positioned on an outer surface of the dielectric.

A substrate processing apparatus includes a chamber in which a first processing space, a second processing space, a connecting space connecting the first processing space and the second processing space, a first hole connecting with the connecting space and a second hole connecting with the connecting space are formed, a first gate valve having a first valve element and closing the first hole, the first valve element sliding in the first hole, opening and closing the connecting space, and a second gate valve having a second valve element and closing the second hole, the second valve element sliding in the second hole, opening and closing the connecting space, wherein a region in which the first hole and the connecting space connect with each other and a region in which the second hole and the connecting space connect with each other are one common region.

A plasma processing method is implemented by a plasma processing apparatus including a processing chamber, a lower electrode, a focus ring arranged around the lower electrode, an inner upper electrode arranged to face the lower electrode, an outer upper electrode electrically insulated from the inner upper electrode, a quartz member arranged between the inner and outer upper electrodes and above the focus ring, a gas supply unit for supplying gas to the processing chamber, a first high frequency power supply unit for applying a first high frequency power for plasma generation to the lower electrode or the inner and outer upper electrodes, a first direct current power supply unit for applying a variable first direct current voltage to the outer upper electrode, and a control unit. The method includes the control unit controlling the variable first direct current voltage to reduce an amount of change in a tilt angle.

A method of processing a substrate including loading the substrate into a plasma-processing apparatus. The plasma-processing apparatus includes a focus ring. The substrate is processed in the plasma-processing apparatus using plasma. The substrate is unloaded from the plasma-processing apparatus. A layer is formed on the focus ring. The layer is formed by an in-situ process in the plasma-processing apparatus.

A method for cleaning surfaces of a substrate processing chamber includes a) supplying a first gas selected from a group consisting of silicon tetrachloride (SiCU.sub.4), carbon tetrachloride (CCI.sub.4), a hydrocarbon (C.sub.xH.sub.y where x and y are integers) and molecular chlorine (CI.sub.2), boron trichloride (BCI.sub.3), and thienyl chloride (SOCI.sub.2); b) striking plasma in the substrate processing chamber to etch the surfaces of the substrate processing chamber; c) extinguishing the plasma and evacuating the substrate processing chamber; d) supplying a second gas including fluorine species; e) striking plasma in the substrate processing chamber to etch the surfaces of the substrate processing chamber; and f) extinguishing the plasma and evacuating the substrate processing chamber.

A substrate processing apparatus includes a first chamber having an inner space and an opening, a substrate support disposed in the inner space of the first chamber, an actuator configured to move the substrate support between a first position and a second position, a second chamber that is disposed in the inner space of the first chamber and defines a substrate processing space together with the substrate support when the substrate support is located at the first position, and at least one fixing mechanism configured to detachably fix the second chamber to the first chamber in the inner space of the first chamber. The second chamber is transferred between the inner space of the first chamber and an outside of the first chamber through the opening when the substrate support is located at the second position.

The present disclosure provides a method for converting the target gas contained in the exhaust gas in plasma phase and an apparatus for implementing the method, the method comprising the steps of: generating a plasma in a conversion region in which the conversion of the target gas occurs; supplying, to the conversion region, a conversion promoting agent containing a conversion promoting element of which the first ionization energy is not greater than 10 eV for promoting the conversion of the target gas; supplying, to the conversion region, a conversion agent that produces conversion products by combining with the dissociation products of the target gas and prevents the dissociation products from recombining into the target gas; and supplying the exhaust gas containing the target gas to the conversion region.

Systems and methods for identifying a single failure in a heater array and compensating for the failure are described. The methods include identifying two X buses and two Y buses of the heater array having a location of the failure. A confirmation of the single failure within the heater array is performed after identifying the two X and two Y buses. Once the single failure is confirmed, the location of the failure is identified. The methods include compensating for the single failure by adjusting a duty cycle of a heater at the location of the failure, adjusting additional duty cycles of heaters along the same X bus as the failed heater and the same Y bus as the failed heater, and maintaining remaining duty cycles of power provided to remaining heaters of the heater array.

A chemical vapor deposition system for coating one or more workpieces is described herein. The deposition system includes a plurality of processing chambers which may be operated independently to increase throughput of the deposition system. Each chamber includes a modular fixture that is configured to maintain the workpieces in a predetermined arrangement which allows for a hollow cathode effect to be maintained in an Interior space of the chamber. The deposition system achieves significantly faster, higher-quality deposition and more complete, conformal coverage.

Provided is a semiconductor fabrication facility including a chamber, a gas supply configured to provide reaction gas to the chamber, a plurality of vacuum pumps respectively configured to pump the reaction gas from the chamber, an exhaust apparatus that is connected to the plurality of vacuum pumps and configured to purify the reaction gas, an exhausting line between the exhaust apparatus and the plurality of vacuum pumps, a thickness detection apparatus connected to the exhausting line and configured to detect a thickness of a byproduct layer in the exhausting line, and a processor connected to the thickness detection apparatus and configured to display preventive maintenance of the exhausting line based on the thickness of the byproduct layer being greater than a threshold value.