Certain embodiments provide a method and non-transitory computer readable medium having instructions that, when executed by a processor of a processing system, cause the processing system to perform a method for improving operation of a semiconductor processing system. The method of part life estimation generally includes obtaining a chamber part having a first surface portion and second surface portion. A data matrix in the first portion of the chamber part is read. The data matrix has raised features. The first portion of the chamber part is cleaned. Wear on the raised features is evaluated. The part is discarded in response to the wear on the raised feature.

A maintenance apparatus includes a case and a maintenance mechanism. The case includes an opening having a size corresponding to a second gate of a vacuum processing apparatus including a processing chamber having a first gate through which a substrate is loaded and unloaded and the second gate different from the first gate. The case is attachable to the second gate while maintaining airtightness. The maintenance mechanism is provided in the case and is configured to perform at least one of an operation of detaching a consumed part in the processing chamber through the opening, an operation of attaching a replacement part in the processing chamber and an operation of cleaning the processing chamber.

Certain embodiments provide a method and non-transitory computer readable medium comprising instructions that, when executed by a processor of a processing system, cause the processing system to perform a method for improving operation of a semiconductor processing system. The method of part life estimation generally includes obtaining a chamber part having a first surface portion and second surface portion. A data matrix in the first portion of the chamber part is read. The data matrix has raised features. The first portion of the chamber part is cleaned. Wear on the raised features is evaluated. The part is discarded in response to the wear on the raised feature.

A processing apparatus performs a predetermined process on an object to be processed by supplying halogen-based gas into a chamber in which a vacuum is maintained, to which chamber a member having an oxide film formed on a surface thereof is connected, or which chamber has an oxide film formed on a surface thereof, wherein the predetermined processing is performed on the target object once or a plurality of times in the chamber. Later, oxygen gas or dry air is supplied to the chamber to purge the chamber, and then the chamber is opened and exposed to the atmosphere.

Embodiments described herein provide an apparatus for improving deposition uniformity by improving plasma profile using a tri-cut chamber liner. The apparatus also includes a lid assembly having a split process stack for reducing downtime and a bottom heater support for more efficient heating of chamber walls.

A jacking tool includes a bar, a first jack and a second jack. The bar extends in a first direction and has a first connection region and a second connection. The first jack is movably attached to the first connection region of the bar. The second jack is movably attached to the second connection region of the bar. The first jack includes a foot, a first guiding rod and a second guiding rod spaced apart from each other in a second direction crossing the first direction, a rod disposed between the first and second guiding rods with a thread section that is movably attached to the bar, a knob attached to one end of the rod and a toggle attached to an opposite end of the rod that is proximate to the foot in the third direction.

A plasma cleaning apparatus includes a metal chamber, a gate assembly, a dielectric, and a high voltage electrode.

The metal chamber is connected to a vacuum tube connecting the process chamber and the vacuum pump, and is provided with a first opening. The gate assembly includes a gate support fixed to the metal chamber around the first opening and having a second opening, and a gate coupled to the gate support and having a first position closing the second opening and a second position opening the second opening switchable with each other. The dielectric is coupled to the outside of the gate support around the second opening, and the high voltage electrode is positioned on an outer surface of the dielectric.

Embodiments described herein provide an apparatus for improving deposition uniformity by improving plasma profile using a tri-cut chamber liner. The apparatus also includes a lid assembly having a split process stack for reducing downtime and a bottom heater support for more efficient heating of chamber walls.

An apparatus for use in a processing chamber is provided. A consumable is within the processing chamber. A scale is positioned to measure a mass of the consumable.

A substrate processing system allows selective replacement of one or both of two rings included in an edge ring. The substrate processing system includes a process module, a transfer robot, and a replacing module. In the process module, an edge ring is lifted from a substrate support by at least one lifter. The edge ring includes a first ring and a second ring. The edge ring is transferred between the process module and the replacing module by the transfer robot. In the replacing module, at least one of the first ring or the second ring included in the edge ring is replaced with a replacement part to prepare a replacement edge ring. The replacement edge ring is transferred between the replacing module and the process module by the transfer robot.