Described herein is a technique capable of capable of managing a substrate processing apparatus efficiently. According to one aspect of the technique described herein, there is provided a substrate processing apparatus including: a process chamber where a substrate is processed; a position information acquisition part configured to acquire position information of the process chamber; a memory device configured to store the position information; and an information controller configured to cause the position information acquired by the position information acquisition part to be stored in the memory device and the position information stored in the memory device to be outputted.

A plasma generator is described comprising an elongate member having a distal end, a proximal end, and a lumen extending therethrough, the proximal end configured to be connectable to a source of an inert gas, a plasma generation tip disposed at the distal end of the elongate member, the plasma generation tip configured to be in electrical communication with a power source, and an activation switch configured to control generation of plasma at the plasma generation tip, wherein the plasma generator is configured to be operably connectable to a medical device.

According to one embodiment of the present disclosure, there can be provided a plasma processing system for multi-station, the system including a processing chamber including at least two or more stations, one plasma generator provided for each of the stations, one inverter provided for each of the plasma generators, a sensing unit configured to measure an electric characteristic of each of the plasma generators, and a controller configured to acquire sensing data from the sensing unit and control each of the inverters.

An effusion cell includes a crucible for containing material to be evaporated or sublimated, a delivery tube configured to deliver evaporated or sublimated material originating from the crucible into a chamber, a supply tube extending from the crucible, the supply tube located and configured to trap condensate originating from the evaporated or sublimated material and to deliver the condensate back to the crucible, and at least one heating element located and configured to heat material in the crucible so as to cause evaporation or sublimation of the material and flow of the evaporated or sublimated material through the delivery tube and out from the effusion cell. The effusion cell is configured such that the crucible can be filled with the material to be evaporated or sublimated without removing the effusion cell from the process vacuum chamber. Semiconductor substrate processing systems may include such effusion cells.

A method for coating an inside of a polyethylene terephthalate bottle with an oxide of silicon includes cooling the bottle within a covered cooling segment while transporting it toward a coating chamber, immediately after having cooled and transported said PET bottle to said coating chamber, forming a plasma, creating an under-pressure, and coating an inner surface of said bottle with an oxide of silicon.

There is provided a vacuum processing apparatus in which at least one of the processing units includes a lower member and an upper member mounted on the lower member to be attachable and detachable that configure the vacuum container, a turning shaft member which is attached to an outer circumferential part of the base plate between the work space and the vacuum container, and has a turning shaft that moves from above the base plate when the turning shaft is connected to the lower member and the lower member turns around the connected part, and a maintenance member including an arm which is disposed above the turning shaft member and turns in a horizontal direction as the upper member is suspended, and in which the lower member is configured to be fixable at the position at a predetermined angle within a range of an angle at which the lower member is capable of turning around the shaft, and to be vertically movable as the arm of the maintenance member fixes the position above a center portion of the lower member of which the position is fixed within a range of the angle at which the lower member is capable of turning, and the upper member is suspended.

A physical vapor deposition system includes a deposition chamber; a wafer support structure disposed within the deposition chamber and configured to support at least one wafer thereon, and at least one effusion cell disposed at least partially outside the deposition chamber and coupled to a wall of the deposition chamber. The at least one effusion cell is configured to generate physical vapor by evaporation or sublimation of material within the at least one effusion cell, and to inject the physical vapor into the deposition chamber through an aperture in the wall of the deposition chamber. The at least one effusion cell is configured such that the at least one effusion cell can be filled with the material to be evaporated or sublimated without removing the at least one effusion cell from the deposition chamber and without interrupting a deposition process performed using the deposition system.

Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer, the mask including a layer covering and protecting the integrated circuits. The mask and a portion of the semiconductor wafer are patterned with a laser scribing process to provide a patterned mask and to form trenches partially into but not through the semiconductor wafer between the integrated circuits. Each of the trenches has a width. The semiconductor wafer is plasma etched through the trenches to form corresponding trench extensions and to singulate the integrated circuits. Each of the corresponding trench extensions has the width.

Implementations of the present disclosure generally relate to an improved vacuum processing system. In one implementation, the vacuum processing system includes a first transfer chamber coupling to at least one vapor phase epitaxy process chamber, a second transfer chamber, a transition station disposed between the first transfer chamber and the second transfer chamber, a plasma-cleaning chamber coupled to the first or second transfer chamber for removing contaminants from a surface of a substrate, and a load lock chamber coupled to the second transfer chamber.

A single input multiple output plasma control system includes a splitter that receives a single input and generates multiple outputs. Each output from the splitter is provided to a load. The splitter includes branch circuits connected between selected splitter outputs. The branch circuits control voltage, current, power, frequency, or phase between each branch to enable controlling a predetermined relationship between the voltage, current, power, impedance, frequency, or phase measured at each load.