A power converter is capable to convert an electrical input power into a bipolar output power and to deliver the bipolar output power to at least two independent plasma processing chambers. The power converter includes: a power input port for connection to an electrical power delivering grid, at least two power output ports each for connection to one of the plasma processing chambers, and a controller configured to control delivering the bipolar output power to the power output ports, using at least one control parameter. The controller is configured to obtain a full set of desired values for the control parameter for the power output ports, calculate whether the power converter is capable of delivering every desired value to every output port, and if so, calculate a sequence of pulses of power delivery to the output ports to supply the power to plasma processes in the plasma processing chambers.

Provided are a display panel, a plasma etching method and a system. After patterning a metal film layer on a substrate with a chlorine-containing gas, a post-treatment for suppressing corrosion is implemented by using plasma containing an oxygen-containing gas and a hydrogen-fluoride-containing gas. Thus, the surface of the metal film layer is an aluminum ion-containing crystal, which solves the technical problem of corrosion of the aluminum layer in the plasma etching technology of the prior art.

A cleaning method is provided. In the cleaning method, a cleaning gas is supplied into a processing chamber, a radio frequency (RF) power for plasma generation is applied to one of a first electrode on which a substrate is to be mounted and a second electrode disposed to be opposite to the first electrode in the processing chamber, and a negative voltage is applied to an edge ring disposed to surround the substrate. Further, plasma is generated from the cleaning gas and a cleaning process using the plasma is performed.

A substrate treating apparatus includes a process chamber having a processing space in which a substrate is plasma-treated and a laser irradiation unit irradiating the substrate with a plurality of lasers having different pulse widths to heat the substrate to reach a temperature at which the substrate is plasma-treated.

A substrate processing system that is optimized for the production of smaller volumes of semiconductor components is disclosed. To minimize cost, the substrate processing system is designed to accommodate smaller substrates, such as substrates having a diameter of roughly one inch. Additionally, the components of the substrate processing system are designed to be interchangeable, thereby further reducing cost and complexity. In certain embodiments, the substrate processing system comprises a lower assembly, which may be used with one or more upper assemblies. The lower assembly is used to support the substrate and provide many of the fluid, electrical, and sensor connections, while the upper assemblies include the apparatus required to perform a certain fabrication function. For example, different upper assemblies may exist for deposition, etching, sputtering and ion implantation.

Described herein is a technique capable of capable of managing a substrate processing apparatus efficiently. According to one aspect of the technique described herein, there is provided a substrate processing apparatus including: a process chamber where a substrate is processed; a position information acquisition part configured to acquire position information of the process chamber; a memory device configured to store the position information; and an information controller configured to cause the position information acquired by the position information acquisition part to be stored in the memory device and the position information stored in the memory device to be outputted.

A method of cleaning a chamber for an electronics manufacturing system includes flowing a gas mixture comprising oxygen and a carrier gas into a remote plasma generator. The method further includes generating a plasma from the gas mixture by the remote plasma generator and performing a remote plasma cleaning of the chamber by flowing the plasma into an interior of the chamber, wherein the plasma removes a plurality of organic contaminants from the chamber.

Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer, the mask including a layer covering and protecting the integrated circuits. The mask and a portion of the semiconductor wafer are patterned with a laser scribing process to provide a patterned mask and to form trenches partially into but not through the semiconductor wafer between the integrated circuits. Each of the trenches has a width. The semiconductor wafer is plasma etched through the trenches to form corresponding trench extensions and to singulate the integrated circuits. Each of the corresponding trench extensions has the width.

Apparatus for treating the surface of objects with plasma, having: an enclosure; a means for placing this enclosure under vacuum; a zone for storing objects to be treated, which is called the upstream storing zone; a zone for storing treated objects, which is called the downstream storing zone; at least two plasma treatment chambers having a means for injecting an active gas mixture, a means for creating an electrical discharge and a means for confining the plasma to the volume inside the chamber; and a means for transferring between the storing zones and the chambers, characterized in that the transferring means are conveying means defining a conveying direction, and in that the various chambers are placed one behind the other, in the conveying direction, and in that the atmospheres of the various plasma treatment chambers are not hermetically sealed off from one another.

A substrate processing system that is optimized for the production of smaller volumes of semiconductor components is disclosed. To minimize cost, the substrate processing system is designed to accommodate smaller substrates, such as substrates having a diameter of roughly one inch. Additionally, the components of the substrate processing system are designed to be interchangeable, thereby further reducing cost and complexity. In certain embodiments, the substrate processing system comprises a lower assembly, which may be used with one or more upper assemblies. The lower assembly is used to support the substrate and provide many of the fluid, electrical, and sensor connections, while the upper assemblies include the apparatus required to perform a certain fabrication function. For example, different upper assemblies may exist for deposition, etching, sputtering and ion implantation.