Methods, apparatus, and systems are provided herein for processing a substrate. Generally, the processing involves Spacer-on-Spacer (SoS) Self-Aligned Quadruple Patterning (SAQP) techniques. The disclosed techniques provide a novel process flow that reduces defects by ensuring that cores are not removed from the substrate until the substrate is transferred to a deposition chamber used to deposit a second spacer layer. This reduces or eliminates the risk of structural damage to features on the substrate while the substrate is being transferred or cleaned. Such structural damage is common when the cores are removed from the substrate prior to cleaning and transfer.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a plurality of process chambers for performing a first process using a microwave energy; one microwave generator for generating a microwave; a wave guide connecting to each of the plurality of process chambers and the microwave generator; and a microwave path changing member provided at a microwave transfer path of the wave guide and changing the microwave transfer path of one chosen chamber among the plurality of process chambers.

Exemplary substrate processing systems may include a lid plate. The systems may include a gas splitter seated on the lid plate. The gas splitter may include a top surface and side surfaces. The gas splitter may define a first and second gas inlets, with each gas inlet extending through one side surface. The gas splitter may define first and second gas outlets extending through the top surface. The gas splitter may define first and second gas lumens that extend between and fluidly couple each gas inlet with corresponding gas outlets. The gas splitter may define mixing channels that include a mixing outlet extending through a side surface and a mixing inlet extending through the top surface. The systems may include output manifolds seated on the lid plate. The systems may include output weldments that fluidly couple each mixing outlet with a respective one of the output manifolds.

A plasma treatment chamber comprises one or more sidewalls. A support surface within the one or more sidewalls holds a workpiece. A first gas injector along the one or more sidewalls injects a first gas flow in a first direction generally parallel to and across a surface of the workpiece. A first pump port along the one or more sidewalls generally opposite of the first gas injector pumps out the first gas flow. A second gas injector along the one or more sidewalls injects a second gas flow in a second direction generally parallel to and across the surface of the workpiece. A second pump port along the one or more sidewalls generally opposite of the second gas injector pumps out the second gas flow. Conductance control rings modulate conductance of the pump ports and are located proximate to plasma screens at a top of the pump ports.

A batch-type apparatus for atomic layer etching (ALE), which is capable of ALE-processing several wafers at the same time, and an ALE method and a semiconductor device manufacturing method based on the batch-type apparatus, are provided. The batch-type apparatus for ALE includes a wafer stacking container in which a plurality of wafers are arranged in a vertical direction, an inner tube extending in the vertical direction, a plurality of nozzles arranged in a first outer portion in the inner tube in a horizontal direction, and a heater surrounding the inner tube and configured to adjust a temperature in the inner tube, wherein gas injection holes are formed corresponding to a height of the plurality of wafers in each of the plurality of nozzles, and a gas outlet is formed in a second outer portion in the inner tube, opposite to the first outer portion.

A substrate processing system includes a hinge assembly configured to allow a substrate support and an RF bias assembly to slide, from a docked position to an undocked position, relative to other components of a processing chamber. A make-break connector is configured to supply fluid to at least one of the substrate support and the RF bias assembly. The make-break connector includes a first portion including a first fluid passage connected to a first conduit. A second portion includes a second fluid passage connected to a second conduit. The first fluid passage in the first portion fluidly communicates with the second fluid passage in the second portion. The first portion is configured to slide with the substrate support and the RF bias assembly relative to the second portion and the other portions of the processing chamber. The first portion is located inwardly relative to the second portion.

A filter module for a substrate processing chamber includes a plurality of exterior panels defining an interior, a plurality of internal panels defining a plurality of compartments within the interior of the filter module, and an adjustable capacitor arranged on a first panel of the plurality of internal panels within a first compartment of the plurality of compartments. The adjustable capacitor is coupled, through the first panel, to a motor located outside of the first compartment, and the adjustable capacitor is configured to receive a radio frequency input signal and provide a radio frequency voltage to the substrate processing chamber based on a position of the motor.

RPCVD apparatus for forming a film is disclosed including a showerhead having at least one gas chamber, one or more plasma inlets to deliver plasma from one or more plasma generators into a reaction chamber; and a plurality of gas inlets to deliver gas from at least one gas chamber into the reaction chamber. At least one of the plasma inlets is located at a position that is between a central region and an outer region of the showerhead and off-centre from an axis of rotation. The plasma generators generate plasma in line of sight of the susceptor and the plasma inlets have openings that are larger than openings of the gas inlets. The gas inlets are configured such that a combination of all of the spatial distributions of gas from the gas inlets provides a uniform distribution of gas density on the surface of a susceptor between a central region and an outer region of the susceptor, for a full rotation of the susceptor.

Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer, the mask including a layer covering and protecting the integrated circuits. The mask and a portion of the semiconductor wafer are patterned with a laser scribing process to provide a patterned mask and to form trenches partially into but not through the semiconductor wafer between the integrated circuits. Each of the trenches has a width. The semiconductor wafer is plasma etched through the trenches to form corresponding trench extensions and to singulate the integrated circuits. Each of the corresponding trench extensions has the width.

A cassette for a workpiece processing system is provided. The cassette is configured to hold one or more replaceable parts, one or more workpieces and one or more pedestal protectors. The cassette includes a divider configured to separate the one or more replacement parts from the one or more workpieces and/or one or more pedestal protectors. The cassette is configured to be disposed in a storage chamber of a workpiece processing apparatus to facilitate automated replacement of replacement parts in one or more processing chambers. Workpiece processing systems and methods of replacing replacement parts in a workpiece processing system are also provided.