Implementations of the present disclosure generally relates to a transfer chamber coupled to at least one vapor phase epitaxy chamber a plasma oxide removal chamber coupled to the transfer chamber, the plasma oxide removal chamber comprising a lid assembly with a mixing chamber and a gas distributor; a first gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a second gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a third gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; and a substrate support with a substrate supporting surface; a lift member disposed in a recess of the substrate supporting surface and coupled through the substrate support to a lift actuator; and a load lock chamber coupled to the transfer chamber.

A processing chamber includes an upper surface and a showerhead arranged to supply gases through the upper surface into the processing chamber. At least a portion of the showerhead extends above the upper surface of the processing chamber. A shroud enclosure is arranged on the upper surface of the processing chamber. The shroud enclosure is arranged around the portion of the showerhead extending above the upper surface of the processing chamber and is configured to isolate radio frequency interference generated by the showerhead.

A method and apparatus for a deposition chamber is provided and includes a twin chamber that includes a first remote plasma system coupled and dedicated to a first processing region, a second remote plasma system coupled and dedicated to a second processing region, and a third remote plasma system shared by the first processing region and the second processing region.

A substrate processing apparatus includes a chamber in which a first processing space, a second processing space, a connecting space connecting the first processing space and the second processing space, a first hole connecting with the connecting space and a second hole connecting with the connecting space are formed, a first gate valve having a first valve element and closing the first hole, the first valve element sliding in the first hole, opening and closing the connecting space, and a second gate valve having a second valve element and closing the second hole, the second valve element sliding in the second hole, opening and closing the connecting space, wherein a region in which the first hole and the connecting space connect with each other and a region in which the second hole and the connecting space connect with each other are one common region.

Methods of passivating at least one facet of a multilayer waveguide structure can include: cleaning, in a first chamber of a multi-chamber ultra-high vacuum (UHV) system, a first facet of the multilayer waveguide structure; transferring the cleaned multilayer waveguide structure from the first chamber to a second chamber of the multi-chamber UHV system; forming, in the second chamber, a first single crystalline passivation layer on the first facet; transferring the multilayer waveguide structure from the second chamber to a third chamber of the multi-chamber UHV system; and forming, in the third chamber, a first dielectric coating on the first single crystalline passivation layer, in which the methods are performed in an UHV environment of the multi-chamber UHV system without removing the multilayer waveguide structure from the UHV environment.

Provided is a substrate processing apparatus, including: transportation chamber maintained in an atmospheric environment where a substrate is transported; a vacuum processing chamber connected with the transportation chamber through a load lock chamber; a substrate placing table installed in the vacuum processing chamber and having a body part and a surface part that is attachable to/detachable from the body part; a storage unit installed in the load lock chamber or the transportation chamber and configured to receive the surface part; and a transportation mechanism configured to transport the substrate from the transportation chamber to the vacuum processing chamber through the load lock chamber and transport the surface part between the storage unit and the body part of the vacuum processing chamber.

Disclosed is a plasma processing apparatus that processes a processing target substrate using microwave plasma within a processing container. The plasma processing apparatus includes a placing table provided in the processing container, and configured to place the processing target substrate thereon; and an antenna provided above the placing table to face the placing table, and including a dielectric plate, the antenna being configured to radiate microwaves into the processing container through the dielectric plate to generate plasma of a processing gas supplied into the processing container. The dielectric plate includes a flat plate portion provided on a bottom surface of the antenna, and formed in a flat shape at least on a surface facing the placing table; and a rib formed on a surface of the flat plate portion that is opposite to the surface facing the placing table.

A semiconductor processing apparatus is described that has a body with a wall defining two processing chambers within the body; a passage through the wall forming a fluid coupling between the two processing chambers; a lid removably coupled to the body, the lid having a portal in fluid communication with the passage; a gas activator coupled to the lid outside the processing chambers, the gas activator having an outlet in fluid communication with the portal of the lid; a substrate support disposed in each processing chamber, each substrate support having at least two heating zones, each with an embedded heating element; a gas distributor coupled to the lid facing each substrate support; and a thermal control member coupled to the lid at an edge of each gas distributor.

Implementations described herein provide for thermal substrate processing apparatus including two thermal process chambers, each defining a process volume, and a substrate support disposed within each process volume. One or more remote plasma sources may be in fluid communication with the process volumes and the remote plasma sources may be configured to deliver a plasma to the process volumes. Various arrangements of remote plasma sources and chambers are described.

In some embodiments, the present disclosure relates to a plasma etching system having direct and localized plasma sources in communication with a processing chamber. The direct plasma is operated to provide a direct plasma to the processing chamber for etching a semiconductor workpiece. The direct plasma has a high potential, formed by applying a large bias voltage to the workpiece. After etching is completed the bias voltage and direct plasma source are turned off. The localized plasma source is then operated to provide a low potential, localized plasma to a position within the processing chamber that is spatially separated from the workpiece. The spatial separation results in formation of a diffused plasma having a zero/low potential that is in contact with the workpiece. The zero/low potential of the diffused plasma allows for reactive ashing to be performed, while mitigating workpiece damage resulting from ion bombardment caused by positive plasma potentials.