A substrate processing system that is optimized for the production of smaller volumes of semiconductor components is disclosed. To minimize cost, the substrate processing system is designed to accommodate smaller substrates, such as substrates having a diameter of roughly one inch. Additionally, the components of the substrate processing system are designed to be interchangeable, thereby further reducing cost and complexity. In certain embodiments, the substrate processing system comprises a lower assembly, which may be used with one or more upper assemblies. The lower assembly is used to support the substrate and provide many of the fluid, electrical, and sensor connections, while the upper assemblies include the apparatus required to perform a certain fabrication function. For example, different upper assemblies may exist for deposition, etching, sputtering and ion implantation.

A substrate processing system installed on a floor face is provided. The substrate processing system includes a substrate transfer module, a supporting table including a top plate disposed separately from the floor face, a plurality of substrate processing modules disposed on the top plate and coupled to the substrate transfer module along a lateral side of the substrate transfer module, and a plurality of power units disposed below the top plate. Further, the plurality of power units correspond to the plurality of substrate processing modules, respectively, and each of the power units is configured to supply electric power to the corresponding processing module.

Disclosed are systems, methods, and devices for generating radicals in an air stream at the intake of an internal combustion engine, as well as increasing the thrust of such air streams into the engine. A plasma generator including plasma actuators, dielectric barrier discharge electrodes, or both is positioned in the intake stream. Plasma actuators are disposed on the interior surface of the plasma generator, exposed to the intake stream. Dielectric barrier discharge electrodes protrude into the intake air stream. Plasma, preferably DBD plasma, glow plasma, or filamentary plasma, is generated in the air intake stream, creating radicals in the stream, mixing the radicals in the stream, and reducing drag while increasing thrust of air in the intake stream. A concentric cylinder can be further disposed in the plasma generator, with further plasma actuators, dielectric barrier discharge electrodes, or both, on the interior and exterior surfaces of the cylinder.

A filter device includes a plurality of coils of which central axes are spaced apart from one another and in parallel to one another and a plurality of ground members spaced apart from one another and extending in parallel to the central axes of the coils outside of the coils. Each of the coils is spaced apart from another coil closest thereto by a first distance. Each of the ground members is spaced apart from a coil closest thereto by a second distance. The number of ground members spaced apart from each of the coils by the second distance is the same.

A substrate processing system that is optimized for the production of smaller volumes of semiconductor components is disclosed. To minimize cost, the substrate processing system is designed to accommodate smaller substrates, such as substrates having a diameter of roughly one inch. Additionally, the components of the substrate processing system are designed to be interchangeable, thereby further reducing cost and complexity. In certain embodiments, the substrate processing system comprises a lower assembly, which may be used with one or more upper assemblies. The lower assembly is used to support the substrate and provide many of the fluid, electrical, and sensor connections, while the upper assemblies include the apparatus required to perform a certain fabrication function. For example, different upper assemblies may exist for deposition, etching, sputtering and ion implantation.

A wafer boat is described for the plasma treatment of disc-shaped wafers, in particular semiconductor wafers for semiconductor or photovoltaic applications, which has a plurality of plates positioned parallel to each other made of an electrically conductive material, which have at least one carrier for a wafer on each side which faces another plate and define a receiving space for the wafers on the plates. The wafer boat also has a plurality of spacer elements, which are positioned between directly adjacent plates in order to position the plates parallel to each other, wherein the spacer elements are electrically conductive. Also a plasma treatment apparatus for wafers and a method for the plasma treatment of wafers is described. The apparatus has a process chamber for the reception of a wafer boat of the previously described type, means for controlling or regulating a process gas atmosphere in the process chamber and at least one voltage source, which is connectable to the plates of the wafer boat in a suitable manner, in order to apply an electrical voltage between directly adjacent plates of the wafer boat, wherein the at least one voltage source is suitable for applying at least one DC-voltage or at least one low-frequency AC-voltage and at least one high-frequency AC-voltage. In the method, during the heating phase a DC-voltage or a low-frequency AC-voltage is applied to the plates of the wafer boat in such a way that the spacer elements heat up by current flowing therethrough, and during a processing phase a high-frequency AC-voltage is applied to the plates of the wafer boat, in order to generate a plasma between the wafers inserted into them.

A cabinet for a solid material container comprises a main body having a top wall, a side wall, and a bottom wall; an entry/exit portion which is attached to a portion of the main body, for putting in and taking out the solid material container; an exhaust duct attached to a portion of the main body; a heating portion for heating the solid material container; a temperature measuring portion for measuring a temperature of the solid material container, or of the heating portion; and a cooling blower for blowing cooling air toward the solid material container.

The present invention concerns a gas circulation device (1) for conveying a gas into a chemical vapour deposition reactor, comprising a conduit (2) with a first end (4) intended to open into said reactor, being polarised at a radiofrequency potential (V) and a second end (3) electrically polarised at a reference potential (V.sub.0), the device being characterised in that it further comprises a means (10a-10e) for applying potential for locally applying at least one determined electrical potential to the conduit (2) between the first and the second end, so as to locally polarise the gas in said conduit at an intermediate electrical potential between the radiofrequency potential and the reference potential.

The present invention provides a plasma generating system that includes: a programmable logic controller (PLC) and a plurality of reactor systems coupled to the PLC by a daisy chain network. Each of the plurality of reactor systems include: a microwave generator for generating microwave energy; and a power supply for providing electrical power to the microwave generator and including a controller, where the controller comprises: at least one microprocessor; and a module communicatively coupled to the at least one processor and including at least one of digital input-output (DIO) and analogue input-output (AIO).

A placing table on an embodiment includes a supporting member and a base. The supporting member includes a placing region provided with a heater, and an outer peripheral region surrounding the placing region. The base includes a first region supporting the placing region thereon, and a second region surrounding the first region. In the second region, through holes are formed. Wirings electrically connected to the heater passes through the through holes of the second region.