An article comprises a body having a coating. The coating comprises a YOF coating or other yttrium-based oxy-fluoride coating generated either by performing a fluorination process on a yttrium-based oxide coating or an oxidation process on a yttrium-based fluorine coating.

A jacking tool includes a bar, a first jack and a second jack. The bar extends in a first direction and has a first connection region and a second connection. The first jack is movably attached to the first connection region of the bar. The second jack is movably attached to the second connection region of the bar. The first jack includes a foot, a first guiding rod and a second guiding rod spaced apart from each other in a second direction crossing the first direction, a rod disposed between the first and second guiding rods with a thread section that is movably attached to the bar, a knob attached to one end of the rod and a toggle attached to an opposite end of the rod that is proximate to the foot in the third direction.

Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in a dielectric-containing stack on a semiconductor substrate. In many embodiments, a mask shrink layer is deposited on a patterned mask layer to thereby narrow the openings in the mask layer. The mask shrink layer may be deposited through a vapor deposition process including, but not limited to, atomic layer deposition or chemical vapor deposition. The mask shrink layer can result in narrower, more vertically uniform etched features. In some embodiments, etching is completed in a single etch step. In some other embodiments, the etching may be done in stages, cycled with a deposition step designed to deposit a protective sidewall coating on the partially etched features. Metal-containing films are particularly suitable as mask shrink films and protective sidewall coatings.

A plasma CVD apparatus is provided. The plasma CVD apparatus includes: a chamber forming a plasma space; and a power introduction terminal arranged in a terminal insertion hole that extends through a wall of the chamber. The power introduction terminal includes an insulator having a through hole and a rod-like electrical conductor inserted in the through hole. One end of the conductor is arranged in the chamber and the other end of the conductor is electrically connected to a power source that supplies power into the chamber. A gap between an inner wall of the insulator and the rod-like electrical conductor is less than 2 mm. A distance from one end of the insulator, which is arranged in the plasma space inside the chamber, to a contact point between the insulator and the conductor is greater than 10 mm.

Apparatus and methods for calibrating a height-adjustable edge ring are described herein. In one example, a calibration jig for positioning an edge ring relative to a reference surface is provided that includes a transparent plate, a plurality of sensors coupled to a first side of the transparent plate, and a plurality of contact pads coupled to an opposing second side of the transparent plate.

An apparatus, for use in a processing chamber is provided. A pneumatic cylinder is provided. A manifold with a supply and an exhaust is controllably connected to the pneumatic cylinder. A dry gas supply is in fluid connection with and provides positive pressure to the exhaust of the manifold.

A plasma processing apparatus, to which process control such as APC is applied, includes: a processing chamber in which plasma processing is performed on a sample; and a plasma processing control device which performs control to optimize a condition for plasma processing which recovers the status inside a processing chamber, in which plasma processing is performed, based on a waiting time from the time when plasma processing for a second lot, which is a lot immediately before a first lot, is completed to the time when plasma processing for the first lot is started, and the content of plasma processing for the second lot.

A method of maintaining a supply of power to a load comprising operating a power generator connected to a mains voltage in a rated operating mode, generating a power signal by the power generator, feeding the power signal to the load, monitoring the mains voltage or a variable derived therefrom for an occurrence of a first specified event, and operating the power generator in a first predefined operating mode based on the occurrence of the first specified event, wherein the first predefined operating mode differs from the rated operating mode.

A plasma processing apparatus, to which process control such as APC is applied, includes: a processing chamber in which plasma processing is performed on a sample; and a plasma processing control device which performs control to optimize a condition for plasma processing which recovers the status inside a processing chamber, in which plasma processing is performed, based on a waiting time from the time when plasma processing for a second lot, which is a lot immediately before a first lot, is completed to the time when plasma processing for the first lot is started, and the content of plasma processing for the second lot.

Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in a dielectric-containing stack on a semiconductor substrate. Separate etching and deposition operations are employed in a cyclic manner. Each etching operation partially etches the feature. Each deposition operation forms a protective coating (e.g., a metal-containing coating) on the sidewalls of the feature to prevent lateral etch of the dielectric material during the etching operations. The protective coating may be deposited using methods that result in formation of the protective coating along substantially the entire length of the sidewalls. The protective coating may be deposited using particular reaction mechanisms that result in substantially complete sidewall coating. Metal-containing coatings have been shown to provide particularly good resistance to lateral etch during the etching operation. In some cases, a bilayer approach may be used to deposit the protective coating on sidewalls of partially etched features.