An apparatus for use in a processing chamber is provided. A consumable is within the processing chamber. A scale is positioned to measure a mass of the consumable.

Methods and systems for controlling temperatures in plasma processing chamber for a wide range of setpoint temperatures and reduced energy consumption. Temperature control is coordinated between a coolant liquid loop and a heat source by a control algorithm implemented by the plasma processing module controller. The control algorithm may completely stop the flow of coolant liquid to a temperature-controlled component in response to a feedback signal indicating an actual temperature is below the setpoint temperature. The control algorithm may further be based at least in part on a feedforward control signal derived from a plasma power or change in plasma power input into the processing chamber during process recipe execution.

A plasma processing apparatus according to an embodiment includes a processing container, a mounting table, a plurality of heaters, and a power supply device. The mounting table is provided in the processing container. The plurality of heaters are provided in the mounting table. The power supply device supplies electric power to the plurality of heaters. The power supply device includes a plurality of transformers and a plurality of zero-cross control type solid state relays (SSRs). The plurality of transformers are configured to step down a voltage from an alternating-current power source. Each of the plurality of transformers includes a primary coil and a secondary coil. The primary coil is connected to the alternating-current power source. Each of the plurality of SSRs is provided between one corresponding heater among the plurality of heaters and the secondary coil of one corresponding transformer among the plurality of transformers.

A method of maintaining a supply of power to a load comprising operating a power generator connected to a mains voltage in a rated operating mode, generating a power signal by the power generator, feeding the power signal to the load, monitoring the mains voltage or a variable derived therefrom for an occurrence of a first specified event, and operating the power generator in a first predefined operating mode based on the occurrence of the first specified event, wherein the first predefined operating mode differs from the rated operating mode.

Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in a dielectric-containing stack on a semiconductor substrate. Separate etching and deposition operations are employed in a cyclic manner. Each etching operation partially etches the feature. Each deposition operation forms a protective coating (e.g., a metal-containing coating) on the sidewalls of the feature to prevent lateral etch of the dielectric material during the etching operations. The protective coating may be deposited using methods that result in formation of the protective coating along substantially the entire length of the sidewalls. The protective coating may be deposited using particular reaction mechanisms that result in substantially complete sidewall coating. Metal-containing coatings have been shown to provide particularly good resistance to lateral etch during the etching operation. In some cases, a bilayer approach may be used to deposit the protective coating on sidewalls of partially etched features.

The present invention provides a plasma CVD apparatus capable of suppressing abnormal electrical discharge even when a high voltage is used. A plasma CVD apparatus 100 includes: a chamber 61 forming a plasma space; and a power introduction terminal 10 arranged in a terminal insertion hole 62 that extends through a wall 61a of the chamber 61, wherein: the power introduction terminal 10 includes an insulator 21 having a through hole 22 and a rod-like electrical conductor 11 inserted in the through hole 22; one end of the rod-like electrical conductor 11 is arranged in the chamber 61 and the other end of the rod-like electrical conductor 11 is electrically connected to a power source E that supplies power into the chamber 61; a gap between an inner wall 211 of the insulator 21 and the rod-like electrical conductor 11 is less than 2 mm; and a distance from said one end of the insulator 21, said one end being arranged in the plasma space inside the chamber 61, to a contact point 221 between the insulator 21 and the rod-like electrical conductor 11 is greater than 10 mm

Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in a dielectric-containing stack on a semiconductor substrate. In many embodiments, a mask shrink layer is deposited on a patterned mask layer to thereby narrow the openings in the mask layer. The mask shrink layer may be deposited through a vapor deposition process including, but not limited to, atomic layer deposition or chemical vapor deposition. The mask shrink layer can result in narrower, more vertically uniform etched features. In some embodiments, etching is completed in a single etch step. In some other embodiments, the etching may be done in stages, cycled with a deposition step designed to deposit a protective sidewall coating on the partially etched features. Metal-containing films are particularly suitable as mask shrink films and protective sidewall coatings.

A substrate processing apparatus includes process chambers configured to process substrates, process modules each including juxtaposed process chambers configured to process substrates, heat medium flow paths respectively installed in the process modules, and temperature adjustment parts individually installed in a corresponding relationship with the process modules and configured to allow a heat medium to flow through the flow paths installed in the process modules. Each of the flow paths includes: upstream and downstream flow path portions positioned at an upstream side and a downstream side of each of the process modules, a penetration flow path portion connected to the upstream flow path portion and configured to extend between the juxtaposed process chambers of each of the process modules, and an outer periphery flow path portion connected to the downstream flow path portion and configured to extend along an outer periphery of each of the process modules.

Methods, systems, and computer programs are presented for determining wear of a consumable part in a semiconductor processing apparatus. One chamber includes a reference part, a consumable part, a transfer arm for transferring the substrate into the chamber, a sensor on the transfer arm, and a controller. The reference part is not subject to wear during operation of the chamber, while the consumable part is subject to wear. The sensor is configured to measure a first distance from the sensor to a surface of the consumable part as the transfer arm travels near the consumable part, and the sensor is configured to measure a second distance from the sensor to a surface of the reference part as the transfer arm travels near the reference part. The controller determines the wear amount of the consumable part based on the first distance and the second distance.

A semiconductor manufacturing apparatus may include a chamber accommodating a substrate to be processed, a first electrode providing electric field in the chamber and a second electrode opposing to the first electrode, and a first power transmitting rod connected to one of the first electrode and the second electrode. A conductive stress attenuating unit may be formed in the first power transmitting rod. Methods of manufacturing semiconductor devices using the semiconductor manufacturing apparatus are also disclosed.