A method of plasma processing a substrate in a plasma chamber is provided. The method includes the steps of supplying a power supply signal to electrodes arranged within the plasma chamber in order to form a plasma in the plasma chamber, monitoring at least one parameter related to the plasma processing, determining a feature related to the at least one monitored parameter, and adjusting the power supply signal during the plasma processing to modify, in particular reduce, the feature. The modification of the feature eliminates or mitigates formation of crazing on the substrate.

A plasma generator and a method for the pulsed provision of electrical power having a frequency of at least 40 KHz to at least two process chambers are described. The plasma generator comprises: a control unit configured to obtain and evaluate process data about processes in the at least two process chambers; a controllable power supply having an output, the controllable power supply being configured to output a direct current at a predetermined voltage and/or intensity at its output in response to a control signal from the control unit; and a switching unit having a first input connected to the output of the power supply and having at least two switching unit outputs for respective connection to one of the at least two process chambers. The switching unit is configured to form, from a direct current at the input, an alternating current having a predetermined frequency of at least 40 KHz as an output signal and to selectively output the output signal as a pulse for a predetermined pulse duration to one of the switching unit outputs in response to a control signal from the control unit. The control unit is configured to coordinate power requirements of the at least two process chambers and to drive the power supply and the switching unit such that at the respective switching unit outputs communicating with the process chambers, substantially the power corresponding to the power requirements is provided as pulses over a period of time, wherein the pulses of the respective process chambers are temporally offset from each other such that the process chambers can be operated simultaneously.

Systems, methods and apparatus for applying a periodic voltage function are disclosed. An exemplary method comprises applying a modified periodic voltage function to an electrical node and monitoring the modified periodic voltage function over multiple cycles to monitor a relationship

[00001]$\frac{{dV}_0}{\mathrm{dt}}-\frac{I_c}{C_1}=D$

to represent a status of a plasma process or the plasma processing chamber, where I.sub.c represents a controllable ion compensation current, D is a unitless value,

[00002]$\frac{{dV}_0}{\mathrm{dT}}$

represents a portion of the modified periodic voltage function that includes a negative voltage ramp, and C.sub.1 is an effective capacitance including a capacitance of a substrate support.

A method of detecting plasma asymmetry in a radio frequency plasma processing system, the method including providing a radio frequency power to a reaction chamber having an approximate chamber symmetry axis and receiving from a plurality of broadband electromagnetic sensors a radio frequency signal. The method also including processing the radio frequency signals using Fourier analysis and determining based on the Fourier analysis of the radio frequency signals that a plasma asymmetry has occurred within the reaction chamber.

A fabrication system for fabricating IC is provided. A processing tool includes at least one electrode and a RF sensor. The electrode is configured to receive a radio frequency (RF) signal from an RF signal generator during first and second semiconductor manufacturing processes. The RF sensor wirelessly detects intensity of the RF signal. A computation device extracts statistical characteristics with a sampling rate based on the detected intensity of the RF signal. A fault detection and classification (FDC) system includes a processor. The processor is configured to determine whether or not the detected intensity of the RF signal exceeds a threshold value or a threshold range according to the extracted statistical characteristics. When the detected intensity of the RF signal exceeds the threshold value or the threshold range, the processor notifies the processing tool to adjust the RF signal or stop tool to check parts damage.

A system, method and software for generating and receiving information about the AC, DC, RF, voltage, and other characteristics and information provided by components in a system. The information can provide insight into the operational characteristics and functionality of the components, as well as the process and system the components are being used within. This information may be used for preventative maintenance of the components, and to detect changes, issues, failures, events, problems, etc. in the process and system.

Systems, methods and apparatus for regulating ion energies in a plasma chamber and chucking a substrate to a substrate support are disclosed. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber, controllably switching power to the substrate so as to apply a periodic voltage function (or a modified periodic voltage function) to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a defined distribution of energies of ions at the surface of the substrate so as to effectuate the defined distribution of ion energies on a time-averaged basis.

The present invention relates to a method for treating a sample using glow-discharge plasma, in an apparatus comprising a treatment vessel, an electrode, a counter-electrode, and a power supply comprising one or more transformers and having a first transformer setting and a second transformer setting, the method comprising: (i) a loading step, involving loading the sample into the treatment vessel; (ii) a first treatment step involving treating the sample in a glow-discharge plasma formed within the treatment vessel by applying an electric field between the electrode and counter-electrode at the first transformer setting; (iii) a second treatment step involving treating the sample in a glow-discharge plasma formed within the treatment vessel by applying an electric field between the electrode and counter-electrode at the second transformer setting; and (iv) a removal step, involving removing treated sample from the treatment vessel. The method can be used to functionalize a sample. The present invention also relates to an apparatus for use in such a method.

Provided is a generator including a power amplifier, at least one sampler, an RF output, a signal generator, a controller including a digital control portion and an analogue control portion, an analogue feedback path between the at least one sampler and the controller enabling an analogue signal representation of a signal to be provided to the controller, and a digital feedback path between the at least one sampler and the controller enabling a digital signal representation of the signal to be provided to the controller. The controller is configured to adjust the RF signal at the RF output from a first state into a second state based on the analogue signal representation and/or the digital signal representation.

A deposition apparatus, which forms a film on a substrate, includes a rotation unit configured to rotate a target about a rotating axis; a striker configured to generate an arc discharge; a driving unit configured to drive the striker so as to make a close state which the striker closes to a side surface around the rotating axis of the target to generate the arc discharge; and a control unit configured to control rotation of the target by the rotation unit so as to change a facing position on the side surface of the target facing the striker in the close state.