A method for plasma processing a substrate, where the method includes generating a plasma in a plasma chamber within which the substrate is held during processing, where generating the plasma includes: flowing a discharge gas through the plasma chamber; coupling a radio frequency (RF) source signal to a first RF electrode, where the coupling ionizes the discharge gas; and coupling a bias signal to a second RF electrode, the bias signal being a periodic series of bias pulses, each period having a bias-ON time and a bias-OFF time, where a bias voltage waveform is applied during the bias-ON time; generating a pulsed DC magnetic field in the plasma chamber, by coupling a magnetizing signal to an electromagnet, the magnetizing signal being a periodic series of current pulses; and prior to coupling the magnetizing signal, synchronizing the periodic series of current pulses with the bias signal to flow a DC magnetizing current during the bias-ON time.

The disclosed temperature control system includes a first segment, a second segment, and a connector. The first segment includes a first temperature control circuit and a first case accommodating the first temperature control circuit therein, the first temperature control circuit including a first heat exchanger for exchanging heat with a first temperature-controlled medium. The second segment includes a first tank and a first pump in a first circulation system for circulating the first temperature-controlled medium through a first flow path in a first member of a plasma processing apparatus and includes a second case accommodating the first tank and the first pump therein. The connector is a part of the first circulation system, is disposed between the first segment and the second segment, and is connected between the first pump and the first heat exchanger.

Disclosed are a substrate support device and a method of preventing the occurrence of arcing. Discharge voltage is controlled by forming flow of arc control gas in an upper portion of the substrate support device and controlling the pressure of the arc control gas, thereby preventing the occurrence of arcing.

The disclosure relates to an apparatus for fabricating a display panel. According to an embodiment of the disclosure, an apparatus for fabricating a display panel, comprising a thin film deposition device forming a thin film on a fabricating substrate, and a thin film characteristic detection device generating optical emission spectroscopy data by analyzing a spectrum of light emitted during a thin film deposition process of the thin film deposition device and detecting thin film characteristic information of the thin film formed on the fabricating substrate by analyzing the optical emission spectroscopy data in real time, wherein the thin film characteristic detection device detects the thin film characteristic information including a hydrogen concentration of the thin film formed on the fabricating substrate by analyzing a wavelength distribution of the light, an intensity distribution of the light, and a plurality of plasma characteristic information from the optical emission spectroscopy data.

A method of characterizing a plasma in a plasma processing chamber that includes: sustaining a plasma generated from a process gas in a plasma processing chamber; flowing a probe gas through the plasma processing chamber; obtaining spatially-resolved OES signals at a wavelength of an optical emission line of the probe gas within the plasma processing chamber, signal intensities of the spatially-resolved OES signals being correlated to a plasma parameter of the plasma, the plasma parameter having a spatial distribution within the plasma processing chamber; and based on the spatially-resolved OES signals, constructing a 3D map of OES signals by data fitting of the spatially-resolved OES signals with a computation model; and converting the 3D map of OES signals into a 3D map of the plasma parameter, the 3D map of the plasma parameter including information about the spatial distribution.

Embodiments disclosed herein include a plasma source including a ground electrode including a plurality of ground electrode portions. The plasma source also includes a power electrode including a plurality of power electrode portions. Ones of the power electrode portions are interleaved with ones of the ground electrode portions.