The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a housing having an inner space; a plate separating the inner space into a first space which is above and a second space which is below and having a plurality of through holes; a first gas supply unit configured to supply a first gas to the first space; a plasma source for generating a plasma at the first space or the second space; and a monitoring unit installed at the plate and configured to monitor a characteristic of the plasma generated at the first space or the second space.

A controller of a plasma processing apparatus stores a frequency spectrum related to a first timing into a storage unit, controls a microwave generator to generate a microwave in correspondence to a setting frequency, setting power, and a setting bandwidth at a second timing, controls a demodulator to measure travelling wave power and reflected wave power of the microwave for each frequency, calculates the frequency spectrum related to the second timing on the basis of a measurement result from the demodulator, calculates a correction value for correcting a waveform of the travelling wave power for each frequency such that a difference for each frequency between the frequency spectrum related to the second timing and the frequency spectrum related to the first timing, stored in the storage unit, is small, and controls the microwave generator on the basis of the calculated correction value for each frequency.

Disclosed is an apparatus for treating a substrate. The substrate treating apparatus may include a chamber for generating plasma in a treating space and treating a substrate using the plasma, and a measurement unit for monitoring light emitted from the plasma of the treating space, in which the measurement unit may include a light collection unit for collecting the light passing through a view port formed on one side wall of the chamber; and an optical cable having a connection terminal fastened to the light collection unit formed at one end to transmit the light, in which a measurement member capable of measuring a fastening length between the light collection unit and the optical cable is disposed in the connection terminal.

A method is provided for in-situ monitoring of etch uniformity during plasma etching, on the basis of the detection of interferometry patterns. The method is applicable to a reactor wherein a plasma is created in the area between the surface to be etched and a counter-surface arranged essentially parallel to the surface to be etched. The occurrence of interference patterns is detected at a location that is placed laterally with respect to the area between the surface to be etched and the counter-surface. The presence of an interference pattern at a particular wavelength is observed through the detection of oscillations of the light intensity measured by an optical detector, preferably by the standard Optical Emission Spectrometry tool of the reactor. When these oscillations are no longer detectable, non-uniformity exceeds a pre-defined limit. The counter surface is arranged such that the oscillations are detected.

A diagnostic device for diagnosing distribution of a radical in a plasma processing chamber, the diagnostic device, may include a spectrometer receiving an optical signal through at least one optical channel connected to the plasma processing chamber, and performing spectral analysis on the optical signal in response to a synchronization signal corresponding to each of states of a multi-level pulse applied to the plasma processing chamber and a synchronizer generating the synchronization signal corresponding to each of the states of the multi-level pulse.

A method for monitoring at least one process parameter of a plasma process being performed on a semiconductor wafer, surface or surface and determine arc events occurring within the plasma tool chamber. The method comprises the steps of detecting the modulated light being generated from the plasma sheath during the plasma process; sampling RF voltage and current signals from the RF transmission line; processing the detected modulated light and the RF signals to produce at least one monitor statistic for the plasma process, and process the monitor signal to determine the occurrence of arcing events during the wafer processing.

A plasma-enhanced thin-film-deposition equipment includes a chamber, a carrier, a showerhead, an annular isolator and a radio-frequency coil. The chamber includes a containing space, the carrier is disposed within the containing space and provided with a carrying surface for carrying at least one substrate. The showerhead is fluidly connected to the containing space, and the showerhead is provided with a plurality of gas-outlets facing the carrying surface. The annular isolator is provided with a mounting space, and the carrier, the showerhead and the annular isolator define a reacting space, wherein the mounting space is isolated from the reacting space. The showerhead is configured to distribute a precursor into the reacting space, and the radio-frequency coil is disposed within the mounting space and coupled to a radio-frequency power supply, so as to enhance a plasma of the precursor for a thin-film-deposition process.

A method, device, server and computer-readable storage medium for monitoring particles in an etching chamber are provided. When performing a WAC process in the etching machine, an EPD data curve of spectral signal intensity varying with time in the etching machine can be obtained through an OES EPD module, the EPD data differential curve can be obtained through differentiation calculation performed on the EPD data curve, and a particle-drop determination can be performed on the etching chamber by acquiring and analyzing the peak value signal of the EPD data differential curve. The OES EPD module directly monitors particle dropping during the WAC process in the etching chamber, so as to facilitate subsequent processes. The present disclosure reduces labor cost, improves determination accuracy, and avoids contamination of the etching chamber and process wafers caused by particle droppings, thereby improving monitoring efficiency, reducing losses, and reducing negative impact on wafer quality.

A plasma processing apparatus 10 includes: a stage 11 for placing an object to be processed; a chamber 12 housing the stage 11, and having a first opening 12a at a top; a first dielectric member 13 forming a first space Si in the chamber 12 by closing the first opening 12a, and having a second opening 13a; a second dielectric member 15 forming a second space S2, the second space communicating with the first space S1 via the second opening 13a and extending more upward than the first dielectric member 13; and first and induction coils 16 and 17 for generating a plasma for processing the object, the former provided above the first dielectric member 13 so as to extend from a central side toward an outer peripheral side of the first dielectric member 13, and the latter provided so as to surround the second dielectric member 15.

A plasma processing method includes forming plasma in a processing chamber; and performing etching to a film to be processed of a film structure that has previously been disposed on an upper surface of a wafer that includes a plurality of film layers. The film structure includes: a lower film including at least one film layer and a groove structure; and an upper film including at least one film layer that covers an inside and an upper end of the groove structure. The plasma processing method includes: removing the upper film by etching until an upper end of the groove structure of the lower film is exposed; performing etching to a film layer of the upper film inside the groove structure; and determining an end point by using a value of thickness of the film layer inside the groove structure of the lower film upon completion of the removing.