Exemplary semiconductor processing methods may include forming a seasoning film on a heater of a processing chamber by a first deposition process. The method may include performing a hardmask deposition process in the processing chamber. The method may include cleaning the processing chamber by a first cleaning process. The method may include monitoring a gas produced during the first cleaning process. The method may include cleaning the processing chamber using a second cleaning process different from the first cleaning process. The method may also include monitoring the gas produced during the second cleaning process.

A plasma processing method is disclosed that includes (a) placing a substrate on an electrostatic chuck at a first temperature, the electrostatic chuck being disposed in a plasma processing chamber; (b) electrostatically attracting the substrate to the electrostatic chuck; (c) starting supply of a heat transfer gas between the substrate and the electrostatic chuck; (d) detecting a flow rate of the heat transfer gas or a pressure between the substrate and the electrostatic chuck; (e) determining whether the flow rate or the pressure exceeds a predetermined threshold value; (f) raising the temperature of the electrostatic chuck until the temperature of the electrostatic chuck becomes a second temperature, the second temperature being higher than the first temperature; and (g) generating plasma in the plasma processing chamber.

Methods and apparatus for passivating a target are provided herein. For example, a method includes a) supplying an oxidizing gas into an inner volume of the process chamber; b) igniting the oxidizing gas to form a plasma and oxidize at least one of a target or target material deposited on a process kit disposed in the inner volume of the process chamber; and c) performing a cycle purge comprising: c1) providing air into the process chamber to react with the at least one of the target or target material deposited on the process kit; c2) maintaining a predetermined pressure for a predetermined time within the process chamber to generate a toxic by-product caused by the air reacting with the at least one of the target or target material deposited on the process kit; and c3) exhausting the process chamber to remove the toxic by-product.

A discharge detection apparatus includes a vacuum container, a conductive installation member in the vacuum container, the installation member being connected to the vacuum container so as to be retained by the vacuum container; a conductive antenna in the vacuum container; and a retainer comprising a material having a specific resistance of 1×10.sup.5 to 1×10.sup.11 (Ω.Math.cm), the retainer retaining the antenna with respect to the installation member without a contact between the installation member and the antenna, by means of a screw located through an inside of the antenna and an inside of the retainer.

A thin-film deposition system includes a top plate positioned above a wafer and configured to generate a plasma during a thin-film deposition process. The system includes a sensor configured to generate sensor signals indicative of a lifetime of a component of the thin-film deposition system, a characteristic of a thin-film deposited by the thin-film deposition system or a characteristic of a process material that flows into the thin-film deposition system. The system includes a control system configured to adjust a relative location of a top plate of the thin-film deposition system with respect to a location of a wafer in the thin-film deposition system during the thin-film deposition process responsive to the sensor signals.

Disclosed is an apparatus for treating a substrate. The substrate treating apparatus may include a chamber for generating plasma in a treating space and treating a substrate using the plasma, and a measurement unit for monitoring light emitted from the plasma of the treating space, in which the measurement unit may include a light collection unit for collecting the light passing through a view port formed on one side wall of the chamber; and an optical cable having a connection terminal fastened to the light collection unit formed at one end to transmit the light, in which a measurement member capable of measuring a fastening length between the light collection unit and the optical cable is disposed in the connection terminal.

Methods and apparatus for passivating a target are provided herein. For example, a method includes a) supplying an oxidizing gas into an inner volume of the process chamber; b) igniting the oxidizing gas to form a plasma and oxidize at least one of a target or target material deposited on a process kit disposed in the inner volume of the process chamber; and c) performing a cycle purge comprising: c1) providing air into the process chamber to react with the at least one of the target or target material deposited on the process kit; c2) maintaining a predetermined pressure for a predetermined time within the process chamber to generate a toxic by-product caused by the air reacting with the at least one of the target or target material deposited on the process kit; and c3) exhausting the process chamber to remove the toxic by-product.

There is provided a gas analyzer apparatus including: a sample chamber which is equipped with a dielectric wall structure and into which only sample gas to be measured is introduced; a plasma generation mechanism that generates plasma inside the sample chamber, which has been depressurized, using an electric field and/or a magnetic field applied through the dielectric wall structure; and an analyzer unit that analyzes the sample gas via the generated plasma. By doing so, it is possible to provide a gas analyzer apparatus capable of accurately analyzing sample gases, even those including corrosive gas, over a long period of time.

Provided are a method and a device that can measure sputtered particles discharged by sputtering with high precision within a short time. A measuring device has a measuring section that measures a ratio between an equivalent value of the number of ion particles discharged from a target by sputtering caused by a pulsed electric discharge and an equivalent value of the number of neutral particles discharged from the target by the pulsed electric discharge. The ratio between the number of the ion particles and the number of the neutral particles discharged from the target by the sputtering can be regarded as one of factors affecting quality of a vapor-deposited film, a film growth rate and an etching rate. Thus, a factor affecting the quality of the vapor-deposited film, the film growth rate and the etching rate can be grasped and also controlled.

A chamber cleaning method includes processing a wafer for a Cu-to-Cu bonding process using plasma in a chamber; and removing copper from the chamber. Removing copper includes forming copper oxide on an inner wall of the chamber by oxidizing copper in the chamber by a plasma treatment that uses a first gas, performing a first monitoring operation that monitors a copper contamination state in the chamber using an optical diagnostic method, removing the copper oxide by a plasma treatment that uses a second gas; and performing a second monitoring operation that monitors a copper contamination state in the chamber using the optical diagnostic method.