Methods for in-situ and real-time chamber condition monitoring is provided. For example, in one embodiment, for each wafer in a chamber, a frequency and wavelength of the free radicals in the chamber is monitored in-situ. The frequency and wavelength of the free radicals are associated with at least one selected chemical. The associated free radicals are compared to an index. The index includes a target range for each chemical in the at least one selected chemical.

Embodiments of the present disclosure relate to a method and an apparatus for monitoring plasma behavior inside a plasma processing chamber. In one example, a method for monitoring plasma behavior includes acquiring at least one image of a plasma, and determining a plasma parameter based on the at least one image.

System and methods of improving dynamic pressure response during recipe step transitions. An exemplary method may include changing at least one of a plurality of recipe parameters in accordance with a processing recipe while running the processing recipe on a semiconductor substrate in a processing chamber. The method may further include measuring a pressure response in the processing chamber responsive to the changing of the at least one of the plurality of recipe parameters, and determining a response error based on the pressure response and a model pressure response calculated based on the processing recipe. The method may further include, in response to determining that the response error may be greater than a threshold value, calculating an adjustment to an operation of a valve downstream of the processing chamber when changing the at least one of the plurality of recipe parameters in accordance with the processing recipe in subsequent runs.

Provided are methods, apparatus and systems for stabilization of a glow discharge from a plasma. Also provided are methods, apparatus and systems for processing optical signals from a stabilised glow plasma with enhanced signal to noise recovery. A first method comprises: generating an electric field within a plasma cell using an alternating excitation voltage to excite particles within the cell, to produce a glow discharge from a plasma in the plasma cell in a resonant condition; monitoring, in each excitation cycle of the alternating excitation voltage, one or more signals that correlate with glow discharge optical emissions from the plasma in the plasma cell; and, in response to said monitoring, controlling one or more operating conditions for the plasma cell to maintain the glow discharge emissions from the plasma within a desired operating range in each excitation cycle of the alternating excitation voltage. A relatively stable glow discharge optical emission is maintained via dynamic resonant feedback control of operating conditions such as the electric field that is used to excite particles within the plasma cell. The stabilization of the glow plasma can be used in glow discharge optical emission spectroscopy (GD-OES) for gas analysis and in other applications.

An active showerhead used for a plasma reactor is described. The active showerhead includes a plurality of substrate layers. The substrate layers include at least one actuator and transfer component. The actuator and transfer component is coupled to a gas line via a gas channel. The active showerhead further includes an electrode layer located below the substrate layers. The electrode layer and the actuator and transfer component both share an opening. The actuator and transfer component allows passage of one or more process gases received from the gas line and the gas channel into the opening without the need for a conventional gas box.

A processing apparatus includes a chamber main body; a stage having therein a first passage for coolant and a space communicating with the first passage; a first pipeline having a first end portion inserted into the space to be connected to the first passage and a second end portion connected to a coolant supply mechanism; and a first sealing member provided at a gap between a wall surface confining the space and the first end portion. A second passage having one end and the other end is formed within the stage. The one end of the second passage is connected to the gap. The first sealing member is contacted with the wall surface at a side of the first passage with respect to the second passage. The processing apparatus comprises a second pipeline connected to the other end thereof; and a detecting device connected to the second pipeline.

A load-lock system may include a chamber enclosing a supporting structure configured to support a wafer; a gas vent arranged at a ceiling of the chamber and configured to vent gas into the chamber with a flow rate of at least twenty normal liters per minute; and a plate fixed to the ceiling between the gas vent and the wafer.

A solution-cathode glow discharge (SCGD) spectrometry apparatus may comprise an SCGD source and a mass or ion mobility spectrometer. A method for ionizing a molecular analyte may comprise contacting the molecular analyte with a plasma discharge to form ions and separating the ions in a mass spectrometer or ion mobility spectrometer. The contacting step may occur under atmospheric pressure and/or ambient conditions. The molecular analyte may be fragmented by the plasma discharge.

Described herein are architectures, platforms and methods for acquiring optical emission spectra from an optical emission spectroscopy system by flowing a dry cleaning gas into a plasma processing chamber of the plasma processing system and igniting a plasma in the plasma processing chamber to initiate the waferless dry cleaning process.

Implementations of the present disclosure generally relate to methods for cleaning processing chambers. More specifically, implementations described herein relate to methods for determining processing chamber cleaning endpoints. In some implementations, a virtual sensor for detecting a cleaning endpoint is provided. The virtual sensor is based on monitoring trends of chamber foreline pressure during cleaning of the chamber, which involves converting solid deposited films on the chamber parts into gaseous byproducts by reaction with etchants like fluorine plasma for example. Validity of the virtual sensor has been confirmed by comparing the virtual sensor response with infrared-based optical measurements. In another implementation, methods of accounting for foreline pressure differences due to facility design and foreline clogging over time.