The present invention relates to a coating device comprising a vacuum coating chamber for conducting vacuum coating processes, said vacuum coating chamber comprising: —one or more cooled chamber walls 1 having an inner side 1 b and a cooled side 1 a, —protection shields being arranged in the interior of the chamber as one or more removable shielding plates 2, which cover at least part of the surface of the inner side 1 b of the one or more cooled chamber walls 1, wherein at least one removable shielding plate 2 is placed forming a gap 8 in relation to the surface of the inner side 1 b of the cooled chamber wall 1 that is covered by said removable shielding plate 2, wherein: —thermal conductive means 9 are arranged filling the gap 8 in an extension corresponding to at least a portion of the total surface of the inner side 1 b of the cooled chamber wall 1 that is covered by said removable shielding plate 2, wherein the thermal conductive means 9 enable conductive heat transfer between said removable shielding plate 2 and the respectively covered cooled chamber wall 1.

Physical vapor deposition methods for reducing the particulates deposited on the substrate are disclosed. The pressure during sputtering can be increased to cause agglomeration of the particulates formed in the plasma. The agglomerated particulates can be moved to an outer portion of the process chamber prior to extinguishing the plasma so that the agglomerates fall harmlessly outside of the diameter of the substrate.

Connection includes transistor, transistor exciter controlled by the frequency generator and/or programmable unit, the power source of voltage, the unit with capacitors. The voltage power source is connected to the transistor through the unit with capacitors. The stabilizing non-inductive resistor is connected to the power supply branch for the magnetron with transistor. The power stabilizing non-inductive resistor is a resistor with the wire wound by Ayrton-Perry-type winding and/or the resistor with low value of the parasitic inductance on the basis of thin layers. The electronic control circuits of the gate of the transistor include a frequency generator with the cut-off switch and with support elements and also include an exciter with support elements. The connection with the stabilizing non-inductive resistor is used in case of the bipolar and/or multi-circuit pulse plasma generator. The depolarization voltage is led from the outside source through the capacitor to the depolarization block.

The invention relates to a device and a method for producing layers whose layer thickness distribution can be adjusted in coating systems with horizontally rotating substrate. A very homogeneous or a specific non-homogeneous distribution can be adjusted. The particle loading is also significantly reduced. The service life is significantly higher compared to other methods. Forming of parasitic coatings is reduced.

A rotary cathode assembly includes a cathode having a tube shape and defining a hollow center, a shield surrounding the cathode, the shield defining an access opening that exposes a portion of the cathode, and a rotary magnet subassembly disposed within the hollow center of the cathode. The rotary magnet subassembly includes a first magnetic component having a first magnetic field strength and a second magnetic component having a second magnetic field strength. The first magnetic field strength is greater than the second magnetic field strength. Characteristically, the first magnet component and the second magnetic component are rotatable between a first position in which the first magnetic component faces the access opening and a second position in which the second magnetic component faces the access opening. A coating system including the rotary cathode assembly is also provided.

Disclosed herein are systems and methods for physical vapor deposition silicon nitride coatings. The methods thereof may include a creating a magnetically confined plasma near a surface of a silicon nitride. The plasma may cause positively charged energetic ions from the plasma to collide with negatively charged silicon nitride atoms, causing the silicon nitride atoms to be sputtered and deposited on a substrate such as titanium. The silicon nitride coating may be nitrogen-rich silicon nitride or silicon-rich silicon nitride.

A combined mass airflow sensor and hydrocarbon trap is provided for absorbing evaporative hydrocarbon emissions from an air intake duct of an internal combustion engine. The combined mass airflow sensor and hydrocarbon trap comprises a duct that supports a hydrocarbon absorbing sheet in an unfolded configuration within a housing. The duct communicates an airstream from an air filter to the air intake duct during operation of the internal combustion engine. An opening in the housing receives a mass airflow sensor into the duct, such that the mass airflow sensor is disposed within the airstream. Guide vanes extending across the duct reduce air turbulence within the airstream passing by the mass airflow sensor. Ports disposed along the duct allow the evaporative hydrocarbon emissions to be drawn into the interior and arrested by the hydrocarbon absorbing sheet when the internal combustion engine is not operating.

Apparatus for depositing germanium and carbon onto one or more substrates comprises a vacuum chamber, at least first and second magnetron sputtering devices and at least one movable mount for supporting the one or more substrates within the vacuum chamber. The first magnetron sputtering device is configured to sputter germanium towards the at least one mount from a first sputtering target comprising germanium, thereby defining a germanium sputtering zone within the vacuum chamber. The second magnetron sputtering device is configured to sputter carbon towards the at least one mount from a second sputtering target comprising carbon, thereby defining a carbon sputtering zone within the vacuum chamber. The at least one mount and the at least first and second magnetron sputtering devices are arranged such that, when each substrate is moved through the germanium sputtering zone on the at least one movable mount, germanium is deposited on the said substrate, and when each substrate is moved through the carbon sputtering zone on the at least one movable mount, carbon is deposited on the said substrate.

Embodiments of the disclosure relate to methods for enlarging the opening width of substrate features by reducing the overhang of deposited films. Some embodiments of the disclosure utilize a high power bias pulse to etch the deposited film near the opening of the substrate feature. Some embodiments of the disclosure etch the deposited film without damaging the underlying substrate.

A method of preparing a hydrated calcium silicate (C—S—H) nano-film. The method includes: 1) synthesizing a hydrated calcium silicate powder having a calcium to silicon ratio (Ca/Si) of 0.5-3.0; 2) calcining the C—S—H powder obtained in 1) for 2-3 hours under a temperature of 150-250° C., cooling to approximately 25° C., and pressing the C—S—H powder under a pressure of 100-200 megapascal, to yield a target material; 3) fixing a substrate on a sample table of a magnetron sputtering apparatus, placing the target material obtained in 2) in a target position of the magnetron sputtering apparatus, pre-sputtering the target material for 5-10 minutes, rotating the substrate at a constant speed, sputtering the target material for 30-300 minutes, to yield a nano-film; and 4) soaking the nano-film obtained in 3) into in a saturated aqueous solution of calcium hydroxide at approximately 25° C. for 1-3 days.