A sputtering target comprises a target material bonded to a backing plate. The target material has a circular disk shape and comprises a sputtering material. The backing plate has a circular disk shape and comprising an external surface. The external surface comprises a plurality of micro channels inset within that span the external surface. The sputtering target is arranged in a sputtering reactor with the external surface of the backing plate disposed external to the sputtering reactor and facing a magnetron, a nano fluid is introduced onto the external surface between the magnetron and the sputtering target, thereby cooling the sputtering target.

A method for treating a micro electro-mechanical system (MEMS) component is disclosed. In one example, the method includes the steps of providing a first wafer, treating the first wafer to form cavities and at least an oxide layer on a top surface of the first wafer using a first chemical vapor deposition (CVD) process, providing a second wafer, bonding the second wafer on a top surface of the at least one oxide layer, treating the second wafer to form a first plurality of structures, depositing a layer of Self-Assembling Monolayer (SAM) to a surface of the MEMS component using a second CVD process.

In an embodiment, a system includes: a chamber; and a magnetic assembly contained within the chamber. The magnetic assembly comprises: an inner magnetic portion comprising first magnets; and an outer magnetic portion comprising second magnets. At least two adjacent magnets, of either the first magnets or the second magnets, have different vertical displacements, and the magnetic assembly is configured to rotate around an axis to generate an electromagnetic field that moves ions toward a target region within the chamber.

A sputtering target includes a tubular backing tube having an axis defined as an axial direction, and a plane in which a radial direction lies perpendicular to the axial direction. At least two cylindrical target segments are juxtaposed along the axial direction on the tubular backing tube and bonding material is placed between the tubular backing tube and the cylindrical target segments. At least two ends of the cylindrical target segments facing each other form a tongue-groove-fit with each other in such a way that at least one tongue at one end is overlapped with at least one groove at a respective other end of two adjacent cylindrical target segments, as viewed in the radial and/or the axial direction. The overlap extends at least along a part of a circumference of the corresponding end. A method for manufacturing a sputtering target is also provided.

An electrical power pulse generator system and a method of the system's operation are described herein. A main energy storage capacitor supplies a negative DC power and a kick energy storage capacitor supplies a positive DC power. A main pulse power transistor is interposed between the main energy storage capacitor and an output pulse rail and includes a main power transmission control input for controlling power transmission from the main energy storage capacitor to the output pulse rail. A positive kick pulse power transistor is interposed between the kick energy storage capacitor and the output pulse rail and includes a kick power transmission control input for controlling power transmission from the kick energy storage capacitor to the output pulse rail. A positive kick pulse power transistor control line is connected to the kick power transmission control input of the positive kick pulse transistor.

A process chamber includes a chamber body having a chamber lid assembly disposed thereon, one or more monitoring devices coupled to the chamber lid assembly, and one or more antennas disposed adjacent to the chamber lid assembly that are in communication with the one or more monitoring devices.

The invention provides a sputter deposition assembly that includes a sputtering chamber, a sputtering target, and a magnet assembly. The magnet assembly includes a two-part magnetic backing plate that includes first and second plate segments, of which at least one is laterally adjustable. Also provided are methods of operating the sputter deposition assembly.

A sputtering target includes an indium cerium zinc oxide represented by In.sub.2Ce.sub.xZnO.sub.4+2x, wherein x=0.52. A relative density of the sputtering target is larger than or equal to 90%. A bulk resistance of the sputtering target in a range from about 10.sup.2 cm to about 10 cm. A weight percentage of crystalline In.sub.2Ce.sub.xZnO.sub.4+2x in the sputtering target is larger than 80%.

Described are methods of fabricating lithium sputter targets, lithium sputter targets, associated handling apparatus, and sputter methods including lithium targets. Various embodiments address adhesion of the lithium metal target to a support structure, avoiding and/or removing passivating coatings formed on the lithium target, uniformity of the lithium target as well as efficient cooling of lithium during sputtering. Target configurations used to compensate for non-uniformities in sputter plasma are described. Modular format lithium tiles and methods of fabrication are described. Rotary lithium sputter targets are also described.

A method includes loading a wafer into a sputtering chamber, followed by depositing a film over the wafer by performing a sputtering process in the sputtering chamber. In the sputtering process, a target is bombarded by ions that are applied with a magnetic field using a magnetron. The magnetron includes a magnetic element over the target, an arm assembly connected to the magnetic element, a hinge mechanism connecting the arm assembly and a rotational shaft. The arm assembly includes a first prong and a second prong at opposite sides of the hinge mechanism. The magnetron further includes a controller that controls motion of the first arm assembly, enabling the first prong to revolve in an orbital motion path about the first hinge mechanism while the second prong remains stationary.