A sputter trap formed on at least a portion of a sputtering chamber component has a plurality of particles and a particle size distribution plot with at least two different distributions. A method of forming a sputter trap having a particle size distribution plot with at least two different distributions is also provided.

A method for treating a micro electro-mechanical system (MEMS) component is disclosed. In one example, the method includes the steps of providing a first wafer, treating the first wafer to form cavities and at least an oxide layer on a top surface of the first wafer using a first chemical vapor deposition (CVD) process, providing a second wafer, bonding the second wafer on a top surface of the at least one oxide layer, treating the second wafer to form a first plurality of structures, depositing a layer of Self-Assembling Monolayer (SAM) to a surface of the MEMS component using a second CVD process.

The present disclosure concerns sputter targets and sputtering methods. In particular, sputter targets and methods of sputtering using conventional sputter targets as well as sputter targets described herein, for highly uniform sputter deposition, are described.

A sputtering target for magnetic recording media capable of producing a magnetic thin film in which the magnetic crystal grains are micronized and the distance between the centers of the grains is reduced while good magnetic properties are maintained. The target including metallic Pt and an oxide, with the balance being metallic Co and inevitable impurities, wherein the Co is contained in a range of 70 at % to 90 at % and the Pt is contained in a range of 10 at % to 30 at % relative to a total of metallic components in the sputtering target for magnetic recording media, the oxide is contained in a range of 26 vol % to 40 vol % relative to a total volume of the sputtering target for magnetic recording media, and the oxide is composed of B.sub.2O.sub.3 and one or more high-melting-point oxides having a melting point of 1470 C. or higher and 2800 C. or lower.

A PVD method includes tilting a first magnetic element over a back side of a target. The first magnetic element is moved about an axis that extends through the target. Then, charged ions are attracted to bombard the target, such that particles are ejected from the target and are deposited over a surface of a wafer. By tilting the magnetic element relative to the target, the distribution of the magnetic fields can be more random and uniform.

The present invention discloses a target assembly which allows safe, fracture-free and economic operation of target materials with low fracture toughness and/or bending strength during arc evaporation processes as well as in sputtering processes. The present invention discloses a target assembly for PVD processes, comprising a target, and a target holding device (20), characterized in that the target (10) comprises a first bayonet lock and the target holding device (20) comprises a counterbody for the first bayonet lock of the target and a second bayonet lock for engaging the target assembly in the cooling means of the deposition chamber.

A sputtering device includes a processing chamber where a substrate is accommodated, and a slit plate that partitions the processing chamber into a first space where a target member is disposed and a second space where the substrate is disposed. The slit plate includes an inner member having an opening that penetrates therethrough in a thickness direction of the slit plate, and an outer member disposed around the inner member. The inner member is attachable to and detachable from the outer member.

A method for treating a micro electro-mechanical system (MEMS) component is disclosed. In one example, the method includes the steps of providing a first wafer, treating the first wafer to form cavities and at least an oxide layer on a top surface of the first wafer using a first chemical vapor deposition (CVD) process, providing a second wafer, bonding the second wafer on a top surface of the at least one oxide layer, treating the second wafer to form a first plurality of structures, depositing a layer of Self-Assembling Monolayer (SAM) to a surface of the MEMS component using a second CVD process.

A thin-film forming apparatus and method are provided. A thin-film forming apparatus includes a chamber configured to hold a vacuum formed in the chamber, a deposition object placed at a set position inside the chamber, a sputtering target placed inside the chamber and containing particles for deposition, a gas supply module configured to supply a gas for forming a plasma state inside the chamber, a step-coverage control module located inside the chamber and facing the deposition object, and a voltage supply module located inside the chamber and configured to supply an electric current to the sputtering target, wherein the deposition object is deposited with the particles provided from the sputtering target based on the electric current, and wherein the step-coverage control module is configured to control a step coverage of the deposition object by adjusting an amount of the particles moving toward the deposition object through a repositioning maneuver.

A sputtering apparatus includes a substrate holder, a first counterpart target area, a second counterpart target area, and a power supply. The first counterpart target area includes a first target and at least one first magnetic part and operates to form a magnetic field in a first plasma area adjacent to the first target. The second counterpart target area includes a second target and at least one second magnetic part and operates to form a magnetic field in a second plasma area adjacent to the second target. The power supply supplies a first power voltage to the first and second targets. A control anode faces the substrate holder in a second direction, with the first and second plasma areas therebetween, and receives a control voltage greater than the first power voltage.