A contact-type power supply apparatus includes: a first cylindrical body; a second cylindrical body configured to surround the first cylindrical body, be disposed concentrically to the first cylindrical body, and be rotatable around a central axis of the first cylindrical body; an annular body configured to surround the first cylindrical body, be disposed concentrically to the first cylindrical body, be in non-contact with the second cylindrical body, and have an end surface being an inclined surface having a tapered shape; and a contact body configured to face the annular body in an axial direction of the first cylindrical body, be electrically connected to the second cylindrical body, rotate around the central axis around the first cylindrical body together with the second cylindrical body, have a contact surface that is in contactable with the inclined surface, and receive an electric potential of the annular body by sliding with the annular body.

A sputtering target-backing plate assembly in which a Si sputtering target is bonded to a backing plate by way of a brazing material, wherein the brazing material has a melting point of 200° C. or higher and a bonding strength of 0.16 kgf/cm.sup.2 or higher. An object is to provide a sputtering target-backing plate assembly in which a Si sputtering target is bonded to a backing plate by way of a brazing material, wherein the sputtering target-backing plate assembly has a high bonding strength and is free from separation even under high temperature sputtering conditions such as during high power sputtering.

A rotatable sputtering target is provided for use in a sputtering system having a plurality of hollow sleeves of sputtering material arranged on a hollow e backing tube so as to form an annular space that is occupied by a bonding agent and a thermally conductive element which is a woven metal mesh.

An ion source with an insertable target holder for holding a solid dopant material is disclosed. The insertable target holder includes a pocket or cavity into which the solid dopant material is disposed. When the solid dopant material melts, it remains contained within the pocket, thus not damaging or degrading the arc chamber. Additionally, the target holder can be moved from one or more positions where the pocket is at least partially in the arc chamber to one or more positions where the pocket is entirely outside the arc chamber. In certain embodiments, a sleeve may be used to cover at least a portion of the open top of the pocket.

A sputtering apparatus (SM) has a vacuum chamber in which is disposed a target. A plasma atmosphere is formed inside the vacuum chamber to thereby sputter the target. The sputtered particles splashed from the target are caused to get adhered to, and deposited on, a surface of a substrate disposed in the vacuum chamber, thereby forming a predetermined thin film thereon. At such a predetermined position inside the vacuum chamber as is subject to adhesion of the sputtered particles splashed from the target, there is disposed an adhesion body whose at least the surface of adhesion of the sputtered particles is made of a material equal in kind to that of the target. The adhesion body has connected thereto a bias power supply for applying a bias voltage having negative potential at the time of forming the plasma atmosphere.

There is provided a film formation apparatus which forms a film on a substrate by sputtering. The apparatus comprises: a substrate holder configured to hold the substrate; and a plurality of cathodes configured to hold targets that emit sputtered particles, and connected to a power supply. At least one of the plurality of cathodes holds the targets of a plurality of types.

A radial magnetron system for plasma surface modification and deposition of high-quality coatings for multi-dimensional structures is described. The system includes an axial electrode, a target material disposed on a portion of the axial electrode, an applied potential from an external electrical power source, and a high-current contact attached to the axial electrode for the applied potential. The system further includes a primary permanent magnet assembly comprising individual magnetic material elements configured to produce a target-region magnetic field for generating a Hall-effect dense plasma region under application of the applied potential to the axial electrode, and a magnet substrate that supports the primary permanent magnet assembly within the axial electrode. The magnet substrate is configured to provide a passageway for cooling the primary permanent magnet assembly and the axial electrode.

The present disclosure is a wafer support, which includes a heating unit, an insulating-and-heat-conducting unit and a conduct portion, wherein the insulating-and-heat-conducting unit is positioned between the conduct portion and the heating unit. During a deposition process, an AC bias is formed on the conduct portion to attract a plasma disposed thereabove. The heating unit includes at least one heating coil, wherein the heating coil heats the wafer supported by the wafer support via the insulating-and-heat-conducting unit and the conduct portion. The insulating-and-heat-conducting unit electrically insulates the heating unit and the conduct portion to prevent the AC flowing in the heating coil and the AC bias on the conduct portion from conducting each other, so the wafer support can generate a stable AC bias and temperature to facilitate forming an evenly-distributed thin film on the wafer supported by the wafer support.

A film deposition apparatus according to an embodiment includes a target including a film deposition material, a backing plate to which the target is to be joined, and a magnet disposed above the backing plate. The backing plate includes a first portion facing the magnet and a second portion in which the intensity of a magnetic field generated by the magnet is lower than in the first portion, the thermal conductivity of a first material included in the first portion is higher than that of a second material included in the second portion, and the Young's modulus of the second material is higher than that of the first material.

A method for ion-assisted deposition of optical coatings. The method may include performing one or more pre-deposition processes. The method may include performing evaporation using an evaporation assembly of an ion-assisted deposition system during ion-assisted deposition using a low energy ion beam source of the ion-assisted deposition system. The method may further include performing sputtering using a sputtering assembly of an ion-assisted deposition system. The evaporation assembly may include an evaporating target and an evaporator configured to directly evaporate target material from the evaporating target onto a surface of the one or more samples. The sputtering assembly may include a sputtering target and a sputtering high energy ion source configured to sputter target material from the sputtering target onto a surface of the one or more samples. The method may include performing one or more post-deposition treatment processes.