A target structure includes a target, a cooling jacket having a flow path through which a heat exchange medium flows, and a backing plate. The target is bonded to one surface of the cooling jacket. A remaining surface of the cooling jacket and the backing plate are bonded in a peripheral portion, and are not bonded in a non-bonding region inside the peripheral portion.

A method for affixing an RFID tag to sputtering targets is disclosed. A cavity is formed on the back of the backing plate adjacent to the outer edge. Within the cavity, an RFID tag is secured with an encapsulant. The encapsulant is cured with the RFID tag capable of communicating with an associated reader through the encapsulant.

A deposited amorphous carbon film includes at least 95% carbon. A percentage of sp3 carbon-carbon bonds present in the amorphous carbon film exceeds 30%, and a hydrogen content of the amorphous carbon film is less than 5%. A process of depositing amorphous carbon on a workpiece includes positioning the workpiece within a process chamber and positioning a magnetron assembly adjacent to the process chamber. The magnetron assembly projects a magnetic field into the process chamber. The method further includes providing a carbon target such that the magnetic field extends through the carbon target toward the workpiece. The method further includes providing a source gas to the process chamber, and providing pulses of DC power to a plasma formed from the source gas within the process chamber. The pulses of DC power are supplied in pulses of 40 microseconds or less, that repeat at a frequency of at least 4 kHz.

A film forming apparatus includes: a processing container; a substrate holder that holds the substrate in the processing container; and a target assembly disposed in an upper side of the substrate holder. The target assembly includes: a target made of metal, including a main body and a flange provided around the main body, and emitting sputter particles from the main body; a target holder including a target electrode configured to supply power to the target, and holding the target; a target clamp that clamps the flange of the target to the target holder; and an anti-deposition shield provided around the main body of the target to cover the flange, the target clamp, and the target holder, and having a labyrinth structure in which an inner tip end thereof is disposed to enter a recess between the main body of the target and the target clamp.

A connection piece for a tubular target which has a cylindrical inner surface and a cylindrical outer surface and at least one magnetic insert. The position of the magnetic insert is adjustable along the axial direction of the connection piece on at least an inner surface or outer surface of the connection piece.

There is provided a cathode unit for a sputtering apparatus, having a construction in which a target can be replaced without opening a vacuum chamber to the atmosphere. The cathode unit having targets and being adapted to be mounted on a vacuum chamber has: a supporting frame mounted on an external wall of the vacuum chamber; an annular moveable base supported by the supporting frame in a manner to be movable toward or away from the vacuum chamber; a rotary shaft body rotatably supported by the movable base in a manner to be elongated through an inner space of the movable base in parallel with a sputtering surface of the target; provided an axial direction of the rotary shaft body is defined to be an X-axis direction, and a forward or backward direction orthogonal to the X-axis direction of the movable base is defined to be a Z-axis direction.

A processing system comprises a chamber body, a substrate support and a lid assembly. The substrate support is located in the chamber body and comprises a first electrode. The lid assembly is positioned over the chamber body and defines a processing volume. The lid assembly comprises a faceplate, a second electrode positioned between the faceplate and the chamber body, and an insulating member positioned between the second electrode and the processing volume. A power supply system is coupled to the first electrode and the faceplate and is configured to generate a plasma in the processing volume.

A sputtering target structure includes a body having a first side and an opposing second side. A first sputtering target is coupled to the first side of the body. The first sputtering target includes a first material. A second sputtering target is coupled to the second side of the body. The second sputtering target includes a second material. A rotation mechanism is coupled to the body and is configured to allow rotation of the body from a first orientation to a second orientation.

A substrate processing apparatus that processes a substrate using particles, includes a conveyance mechanism configured to convey the substrate along a conveyance surface, a particle source configured to emit particles, a rotation mechanism configured to make the particle source pivot about a rotation axis, and a movement mechanism configured to move the particle source such that a distance between the particle source and the conveyance surface is changed.

An AC power connector for connecting an AC power supply with a device is provided. The AC power connector includes at least one first element connectable with the AC power supply and at least one second element connectable with the device, the first element and the second elements being arranged at a first distance with respect to each other for defining a capacitance, wherein the at least one first element and the at least one second element are rotatable with respect to each other, wherein the first element and the second element are configured for a transfer of an AC power between the at least one first element and the at least one second element.