H01J37/3435

Film-forming apparatus, film-forming system, and film-forming method

A film-forming apparatus comprises: a processing chamber defining a processing space, a first sputter-particle emitter and a second sputter-particle emitter having targets, respectively, from which sputter-particles are emitted in different oblique directions in the processing space, a sputter-particle blocking plate having a passage hole through which the sputter particles emitted from the first sputter-particle emitter and the second sputter-particle emitter pass, a substrate support configured to support a substrate and provided at a side opposite the first sputter-particle emitter and the second sputter-particle emitter with respect to the sputter-particle blocking plate in the processing space, a substrate moving mechanism configured to linearly move the substrate supported on the substrate support, and a controller configured to control the emission of sputter-particles from the first sputter-particle emitter and the second sputter-particle emitter while controlling the substrate moving mechanism to move the substrate linearly.

Sputtering equipment and operation method thereof
11626272 · 2023-04-11 · ·

A sputtering equipment is adapted for sputtering substrates, where each of the substrates includes two opposite main surfaces and side surfaces connecting the two main surfaces. The sputtering equipment includes a cavity, at least one target set and a carrier box. The at least one target set is disposed in the cavity, the target set includes targets, and the targets are staggered at both side surfaces of an axis. The carrier box is movably disposed so as to enter and exit the cavity, and includes substrate accommodating grooves. The substrates are adapted for being placed in the substrate accommodating grooves of the carrier box, and at least one side surface of each of the substrates is located outside the carrier box and protrudes toward the at least one target set.

Magnetron assembly having coolant guide for enhanced target cooling

Embodiments of coolant guides for use in magnetron assemblies are provided herein. In some embodiments, a coolant guide for use in a magnetron assembly includes: a body having a guide channel extending through the body, wherein an upper opening of the guide channel corresponding with an upper surface of the body has a first size and a lower opening of the guide channel corresponding with a lower surface of the body has a second size greater than the first size, and wherein the body includes a first pair of outer sidewalls that are substantially parallel to each other and a second pair of outer sidewalls that are angled toward each other; and an upper lip extending away from an upper surface of the body.

MAGNETRON TARGET COUPLING AND SUPPORT DEVICE

Disclosed herein are devices, methods, and systems related to a magnetron-target coupling that includes a target coupling flange, a shaft fixedly coupled to the target coupling flange on a face opposite the target coupling flange, and having a first linear bearing component on a face opposite the target coupling flange. The magnetron-target coupling also includes a communication interface having a first communication electrode and a second communication electrode that are electrically coupled to each other wherein the second communication electrode is fixedly attached to the target coupling flange on a side opposite the shaft, the target coupling flange being disposed between the first communication electrode and the second communication electrode. The first communication electrode is supported such that it may be moved toward and/or away from the second communication electrode.

Target structure of physical vapor deposition

A sputtering target structure includes a body having a first side and an opposing second side. A first sputtering target is coupled to the first side of the body. The first sputtering target includes a first material. A second sputtering target is coupled to the second side of the body. The second sputtering target includes a second material. A rotation mechanism is coupled to the body and is configured to allow rotation of the body from a first orientation to a second orientation.

SPUTTER TRAP HAVING A THIN HIGH PURITY COATING LAYER AND METHOD OF MAKING THE SAME

An aluminum or copper alloy sputtering chamber includes a front surface, a back surface opposite the front surface, and a sputter trap formed on at least a portion of the front surface A coating of titanium particles is formed on the sputter trap.

ELECTROCHROMIC DEVICES
20230144179 · 2023-05-11 ·

Conventional electrochromic devices frequently suffer from poor reliability and poor performance. Improvements are made using entirely solid and inorganic materials. Electrochromic devices are fabricated by forming an ion conducting electronically-insulating interfacial region that serves as an IC layer. In some methods, the interfacial region is formed after formation of an electrochromic and a counter electrode layer. The interfacial region contains an ion conducting electronically-insulating material along with components of the electrochromic and/or the counter electrode layer. Materials and microstructure of the electrochromic devices provide improvements in performance and reliability over conventional devices. In various embodiments, a counter electrode is fabricated to include a base anodically coloring material and one or more additives.

LATERALLY ADJUSTABLE RETURN PATH MAGNET ASSEMBLY AND METHODS
20170369985 · 2017-12-28 ·

The invention provides a sputter deposition assembly that includes a sputtering chamber, a sputtering target, and a magnet assembly. The magnet assembly includes a two-part magnetic backing plate that includes first and second plate segments, of which at least one is laterally adjustable. Also provided are methods of operating the sputter deposition assembly.

METHOD AND PROCESSING APPARATUS FOR PERFORMING PRE-TREATMENT TO FORM COPPER WIRING IN RECESS FORMED IN SUBSTRATE

There is provided a method for performing a pre-treatment to form a copper wiring in a recess formed in a substrate, which includes forming a barrier layer on a surface of the substrate that defines the recess, and forming a seed layer on the barrier layer. The method further includes at least one of etching the barrier layer and etching the seed layer. In the at least one of etching the barrier layer and etching the seed layer, the substrate is inclined with respect to an irradiation direction of ions while rotating the substrate.

Physical vapor deposition apparatus and method thereof

A an apparatus includes a processing chamber configured to house a workpiece, a target holder in the processing chamber, a first magnetic element positioned over a backside of the target holder, a first arm assembly connected to the first magnetic element, a rotational shaft, and a first hinge mechanism connecting the rotational shaft and the first arm assembly.