The sputtering cathode has a tubular shape having a pair of long sides facing each other in cross-sectional shape, has a sputtering target whose erosion surface faces inward, and a magnetic circuit is provided along the sputtering target. The pair of long sides are constituted by rotary targets each having a cylindrical shape. The rotary target is internally provided with a magnetic circuit and configured to allow the flow of cooling water. The magnetic circuit is provided parallel to the central axis of the rotary target and has a rectangular cross-sectional shape having a long side perpendicular to the radial direction of the rotary target.

A sputtering system and method are disclosed. The system includes a first power source that is configured to apply a first voltage at a first electrode that alternates between positive and negative relative to a second electrode during each of multiple cycles. A second power source is coupled to a third electrode and the second electrode, and the second power source is configured to apply a second voltage to the third electrode that alternates between positive and negative relative to the second electrode during each of the multiple cycles. A controller is configured to control the first power source and the second power source to phase-synchronize the first voltage with the second voltage, so both, the first voltage and the second voltage, are simultaneously negative during a portion of each cycle and simultaneously positive relative to the second electrode during another portion of each cycle.

Methods and apparatus for forming a thin film transistor (TFT) having a metal oxide layer. The method may include forming an amorphous metal oxide layer and treating the metal oxide layer with a silicon containing gas or plasma including Si.sup.4+ ions. The silicon treatment of the metal oxide layer helps fill the oxygen vacancies in the metal oxide channel layer, leading to a more stable TFT and preventing a negative threshold voltage in the TFT.

A sputtering system and method are disclosed. The system includes first power source coupled between a first and second power leads, and the first power source provides a first voltage that alternates between positive and negative during each of multiple cycles. The system also includes a second power source coupled between the second power lead and a third power lead, and the second power source provides a second voltage that alternates between positive and negative during each of the multiple cycles. A controller of the system controls the first power source and the second power source to phase-synchronize the first voltage with the second voltage, so both, the first voltage and the second voltage, are simultaneously negative during a portion of each cycle and simultaneously positive during another portion of each cycle.

An apparatus (1b) and method of depleting a plasma of electrons in a plasma coating apparatus is disclosed. The invention involves generating a plasma comprising ions (9), particulate material (5) and electrons (6) adjacent a target (4); forming a plasma trap (52) to constrain the plasma near to the target (4), and depleting the plasma of electrons by: providing an additional magnetic field (8b) that is superimposed over the magnetic field of the plasma trap (3, 52), which extends beyond a boundary layer (52) of the plasma trap, and which draws electrons (6) from, or near to, the boundary layer (52) of the plasma trap away from the target (4). The invention proposes applying a baseline voltage (50) to the target (4); and by applying periodic voltage pulses (13b) to the target (4). The additional magnetic field (8b) depletes the plasma of electrons, such that when a voltage pulse (13b) is applied to the target (4), ions (9) can be ejected from the plasma with reduced electron shielding. This has been shown to improve ion bombardment and reduce adverse electron bombardment effects.

A magnetron sputtering device comprising a substrate; a target which forms a cathode in a DC electric field and comprises an electrically conductive mixture for coating the substrate; an anode in the DC electric field; a reaction chamber in which the target and the substrate are arranged. The target is spaced apart from the substrate. The voltage source is configured to generate the DC electric field between the cathode and the anode. The mixture comprises a first material and a second material. The substrate comprises a third material. The first material is an electrically non-conductive solid. The second material is an electrically conductive solid. The third material is an electrically conductive solid.

The sputtering cathode has a tubular shape having a pair of long sides facing each other in cross-sectional shape, has a sputtering target whose erosion surface faces inward, and a magnetic circuit is provided along the sputtering target. The pair of long sides are constituted by rotary targets each having a cylindrical shape. The rotary target is internally provided with a magnetic circuit and configured to allow the flow of cooling water. The magnetic circuit is provided parallel to the central axis of the rotary target and has a rectangular cross-sectional shape having a long side perpendicular to the radial direction of the rotary target.

An assembly for cathodic arc deposition of a material onto an article. The assembly includes a chamber for receiving an article to be coated and a rotating target. The rotatable target has a surface from which a plasma material is ejected. An anode ring is positioned a first distance from the surface of the rotatable target. The anode ring has an opening with a central axis that is parallel to a rotational axis of the rotatable target and offset a second distance from the rotational axis. A spark device is disposed in the chamber for generating an arc on the surface of the rotatable target. The assembly configured to direct a stream of charged particles ejected from the surface of the target through the opening of the anode ring to the article to be coated.

A sputtering system and method are disclosed. The system includes first power source coupled to a first magnetron and an anode, and the first power source provides a first anode voltage that alternates between positive and negative during each of multiple cycles. The system also includes a second power source coupled to the second magnetron and the anode, and the second power source provides a second anode voltage that alternates between positive and negative during each of the multiple cycles. A controller of the system controls the first power source and the second power source to phase-synchronize the first anode voltage with the second anode voltage, so both, the first anode voltage and the second anode voltage, are simultaneously negative during a portion of each cycle and simultaneously positive relative to the first and second magnetrons during another portion of each cycle.

Systems and methods for are disclosed. One method includes providing at least a first electrode, a second electrode, and a third electrode and using each of at least two, separate and different, target materials in connection with the three electrodes to enable sputtering. The method also includes applying a first voltage at the first electrode that alternates between positive and negative relative to the second electrode during each of multiple cycles and applying a second voltage to the third electrode that alternates between positive and negative relative to the second electrode during each of the multiple cycles.