A film forming apparatus 1 includes a target TA, a ring-shaped shield member 30 provided between the target TA and a plasma generation unit, and a ring-shaped shield member 40 provided between the target TA and a workpiece holding unit. The target TA includes a cylindrical target member 21 and a backing tube (supporting member) 20 configured to support the target member 21. Each of the shield member 30, the shield member 40, and the target member 21 is stacked in a Z direction around an axis VL1 as a central axis extending in the Z direction, each of the shield member 30, the target member 21, and the shield member 40 is arranged so as to be separated from each other in the Z direction, and an inner diameter D1 of the shield member 30 is smaller than an inner diameter D2 of the target member 21.

A plasma reactor is provided, including a process chamber, a plasma antenna assembly configured to generate a plasma in the process chamber, and one or more magnets configured to confine the plasma to a location in the process chamber that is remote from the plasma antenna assembly. The plasma antenna assembly includes a radio frequency (RF) antenna arranged to be driven by a current so as to generate the plasma in a plasma generation region, a housing arranged to separate the antenna from the plasma generated in the plasma generation region, and a ferromagnetic or ferrimagnetic focussing member is arranged to partially surround a length of the antenna.

There is provided a film formation apparatus which forms a film on a substrate by sputtering. The apparatus comprises: a substrate holder configured to hold the substrate; and a plurality of cathodes configured to hold targets that emit sputtered particles, and connected to a power supply. At least one of the plurality of cathodes holds the targets of a plurality of types.

Provided is a sputtering apparatus which is capable of suppressing a local temperature rise at an outer peripheral part of a to-be-processed substrate. The sputtering apparatus SM has: a vacuum chamber in which a target and the to-be-processed substrate Sw are disposed face-to-face with each other; a shield plate for enclosing a film forming space between the target and the to-be-processed substrate; and a cooling unit for cooling the shield plate. The shield plate has a first shield plate part which is disposed around the to-be-processed substrate and which has a first opening equivalent in contour to the to-be-processed substrate. The cooling unit includes a first coolant passage which is disposed in the first shield plate part and which has a passage portion extending all the way to the first shield plate part positioned around the first opening.

A thin-film-deposition equipment with shielding device, which includes a reaction chamber, a carrier, a shielding device and two optical sensors. The carrier and a portion of the shielding device are disposed within the reaction chamber. The shielding device includes two shield members, and at least one driver interconnecting to drive the two shield members to sway in opposite directions and switch between an open state and a shielding state. Each of the two shield members is disposed with a shield protrusion and a sensing region adjacent to each other. The shield protrusion is for shielding the sensing region from contaminants, thereby the optical sensors can accurately detect locations of the shield members.

The present disclosure provides a thin-film-deposition equipment with shielding device, which includes a reaction chamber, a carrier and a shielding device, wherein a portion of the shielding device and the carrier are disposed within the reaction chamber. The shielding device includes a first-shield member, a second-shield member and a driver. The driver interconnects the first-shield member and the second-shield member, for driving the first-shield member and the second-shield member to move in opposite directions. During a deposition process, the driver swings the shield members away from each other into an open state. During a cleaning process, the driver swings the shield members toward each other into a shielding state for covering the carrier, such that to prevent polluting the carrier during the process of cleaning the thin-film-deposition equipment.

The present disclosure provides a thin-film-deposition equipment with shielding device, which includes a reaction chamber, a carrier and a shielding device. The shielding device includes a first-carry arm, a second-carry arm, a first-shield member, a second-shield member and a driver. The driver interconnects the first-carry arm and the second first-carry arm, for driving and swinging the first-shield member and the second-shield member to move in opposite directions via the first-carry arm and the second first-carry arm. During a cleaning process, the driver swings the shield members toward each other into a shielding state for covering the carrier, such that to prevent polluting the carrier during the process of cleaning the thin-film-deposition equipment.

A physical vapor deposition processing chamber is described. The processing chamber includes a target backing plate in a top portion of the processing chamber, a substrate support in a bottom portion of the processing chamber, a deposition ring positioned at an outer periphery of the substrate support and a shield. The substrate support has a support surface spaced a distance from the target backing plate to form a process cavity. The shield forms an outer bound of the process cavity. In-chamber cleaning methods are also described. In an embodiment, the method includes closing a bottom gas flow path of a processing chamber to a process cavity, flowing an inert gas from the bottom gas flow path, flowing a reactant into the process cavity through an opening in the shield, and evacuating the reaction gas from the process cavity.

Methods and apparatus for processing a substrate using improved shield configurations are provided herein. For example, a process kit for use in a physical vapor deposition chamber comprises a shield comprising an inner wall comprising an upper portion having a first wavy fin configuration and a bottom portion having a second wavy fin configuration different from the first wavy fin configuration such that a surface area of the shield is about 1400 in.sup.2 to about 1410 in.sup.2.

Methods and apparatus for processing a substrate using improved shield configurations are provided herein. For example, a process kit for use in a physical vapor deposition chamber comprises a shield comprising an inner wall comprising an upper portion having a first wavy fin configuration and a bottom portion having a second wavy fin configuration different from the first wavy fin configuration such that a surface area of the shield is about 1400 in.sup.2 to about 1410 in.sup.2.