A substrate processing apparatus includes a vacuum chamber with a processing zone for processing a substrate using plasma and at least one magnetic field source configured to generate one or more active magnetic fields through the processing zone. The apparatus also includes a magnetic field sensor configured to detect a signal representing the one or more active magnetic fields, and a controller coupled to the magnetic field sensor, and the at least one magnetic field source. The controller is configured to detect a target value corresponding to at least one characteristic of the one or more active magnetic fields, set an initial current through the at least one magnetic field source, the initial current corresponding to the target value; and adjust a subsequent current through the at least one magnetic field source based on the detected signal representing the one or more active magnetic fields.

A sputtering system and method are disclosed. The system includes first power source coupled between a first and second power leads, and the first power source provides a first voltage that alternates between positive and negative during each of multiple cycles. The system also includes a second power source coupled between the second power lead and a third power lead, and the second power source provides a second voltage that alternates between positive and negative during each of the multiple cycles. A controller of the system controls the first power source and the second power source to phase-synchronize the first voltage with the second voltage, so both, the first voltage and the second voltage, are simultaneously negative during a portion of each cycle and simultaneously positive during another portion of each cycle.

An apparatus comprises a vacuum chamber configured to produce a substantially atmospheric vacuum environment for plasma processing; a radio frequency (RF) power supply located outside of the vacuum chamber; an RF matching network operatively coupled to the RF power supply; and a plurality of electrodes mounted within the vacuum chamber, the plurality of electrodes configured to receive RF power signals from the RF power supply through the RF matching network. The RF power signals are simultaneously delivered to the plurality of electrodes during a sputtering operation. The plurality of electrodes and a set of electrical components are operative to manage the inductive and capacitive reactance for coupling the RF power signals to provide more desirable plasma coupling during the sputtering operation.

Provided a plasma process apparatus including a chamber including a plasma processing space, a substrate stage included in the chamber, the substrate stage including a seating surface, a target including deposition particles to be deposited on the substrate, a gas supplier configured to supply gas into the chamber, a plasma generator configured to generate plasma from the gas, the plasma generator configured to deposit the deposition particles on the substrate through the plasma, at least one permanent magnet on the target being rotatable and configured to distribute the plasma on the target through a magnetic field, and a coil assembly on an outer wall of the chamber and assembly including first through third side coils inclined and being configured to generate first through third vectors, respectively, and the coil assembly being configured to generate a magnetic field vector guiding the plasma through a combination of the first through third vectors.

An electrical power pulse generator system and a method of the system's operation are described herein. A main energy storage capacitor supplies a negative DC power and a kick energy storage capacitor supplies a positive DC power. A main pulse power transistor is interposed between the main energy storage capacitor and an output pulse rail and includes a main power transmission control input for controlling power transmission from the main energy storage capacitor to the output pulse rail. A positive kick pulse power transistor is interposed between the kick energy storage capacitor and the output pulse rail and includes a kick power transmission control input for controlling power transmission from the kick energy storage capacitor to the output pulse rail. A positive kick pulse power transistor control line is connected to the kick power transmission control input of the positive kick pulse transistor.

A substrate processing apparatus is described. The substrate processing apparatus includes a chamber in which a substrate processing process is performed, a substrate support placed inside the chamber and configured to support a substrate, a target placed to face the substrate, a target holder connected to the target, a non-sinusoidal bias supply configured to provide a periodic non-sinusoidal bias to the substrate support, a DC power supply configured to apply a DC power to the target through the target holder, and a controller configured to control a waveform of the periodic non-sinusoidal bias. The periodic non-sinusoidal bias includes, within one cycle, a pulse period where a voltage is maintained constantly and a ramp period where a voltage gradually changes.