Embodiments described herein relate to shields for use in target assemblies in semiconductor process chambers. The shields can be used to shield exposed surfaces and chamber components within the process chambers such that unwanted redeposits are prevented from forming on the exposed surfaces and other chamber components. In some embodiments, the shields are electrically floating and are configured to cover the ends of the target. The target assembly has a target support secured to a mounting plate and a plurality of pins extending therefrom. Each of the shields has a shield body with an opening. The shield body has alignment features configured to align with the plurality pins such that the shield connects with the target support. Shields as described herein can be made of smooth edges, helping to minimize particle generation and to prevent arcing at least partially caused by sharp edges of shields.

A deposition system comprises a vacuum chamber having a cylindrical inner wall, a cylindrical parts carousel disposed concentrically inside the cylindrical inner wall of the vacuum chamber, and one or more deposition sources arranged to flow deposition material onto the cylindrical parts carousel. A cylindrical shutter assembly is disposed concentrically inside the cylindrical inner wall of the vacuum chamber, and has (1) a shuttered position in which the cylindrical shutter assembly blocks the one or more deposition sources from depositing onto the parts carousel and (2) an unshuttered position in which the cylindrical shutter assembly does not block the one or more deposition sources from depositing onto the parts carousel. A drive train rotates the cylindrical shutter assembly between the shuttered and unshuttered positions. The drive train not operatively connected to rotate the cylindrical parts carousel. The deposition sources may include inner and outer sputter sources.

A processing apparatus according to an embodiment includes an object placement unit, a source placement unit, a flow rectifying member, and a power supply. The object placement unit is configured to have an object placed thereon. The source placement unit is disposed apart from the object placement unit and configured to have a particle source capable of ejecting a particle toward the object placed thereon. The flow rectifying member is disposed between the object placement unit and the source placement unit in a first direction from the source placement unit to the object placement unit. The power supply is configured to apply, to the flow rectifying member, a voltage having the same polarity as that of an electric charge in the particle.

According to an embodiment, a processing apparatus includes a generator mount, a first-object mount, and a first collimator. A particle generator capable of emitting particles is placed on the generator mount. A first object is placed on the first-object mount. The first collimator is placed between the generator mount and the first-object mount, and has first walls and second walls. In the first collimator, the first walls and the second walls form first through holes extending in a first direction from the generator mount to the first-object mount. Each of the second walls is provided with at least one first passage.

A substrate processing apparatus includes a supporting table having a mounting region for a substrate. A rotation shaft supporting a shutter extends in a vertical direction. The shutter is moved between a first region above the supporting table and a second region by rotating the rotation shaft about its central axis. The shutter includes a pipe having gas output holes. When the shutter is disposed in the first region, the gas output holes are located outside the mounting region in a rotation direction from the second region toward the first region. The minimum distance between the central axis and the gas output holes is smaller than or equal to the minimum distance between the central axis and the mounting region. The maximum distance between the central axis and the gas output holes is greater than equal to the maximum distance between the central axis and the mounting region.

A sputtering apparatus includes: a target disposed on a ceiling of a processing container capable of being depressurized; a gas inlet configured to supply a sputtering gas into the processing container; a first shield disposed around the target and configured to prevent deposition of a film around the target; and a second shield disposed in the processing container to cover an inner wall of the ceiling with a space from the ceiling, and including an opening in a portion corresponding to the target.

A collimator that is biasable is provided. The ability to bias the collimator allows control of the electric field through which the sputter species pass. In some implementations of the present disclosure, a collimator that has a high effective aspect ratio while maintaining a low aspect ratio along the periphery of the collimator of the hexagonal array of the collimator is provided. In some implementations, a collimator with a steep entry edge in the hexagonal array is provided. It has been found that use of a steep entry edge in the collimator reduces deposition overhang and clogging of the cells of the hexagonal array. These various features lead to improve film uniformity and extend the life of the collimator and process kit.

Embodiments of collimators and process chambers incorporating same are provided herein. In some embodiments, a collimator for use in a substrate processing chamber includes a ring; an adapter surrounding the ring and having an inner annular wall; and a plurality of spokes extending from the inner annular wall and intersecting at a central axis of the collimator.

The soft magnetic material multilayer deposition apparatus includes a circular arrangement of a multitude of substrate carriers in a circular inner space of a vacuum transport chamber. In operation the substrate carriers pass treatment stations. One of the treatment stations has a sputtering target made of a first soft magnetic material. A second treatment station includes a target made of a second soft magnetic material which is different from the first soft magnetic material of the first addressed target. A control unit controlling relative movement of the substrate carriers with respect to the treatment stations provides for more than one 360 revolution of the multitude of substrate carriers around the axis AX of the circular inner space of the vacuum transport chamber, while the first and second treatment stations are continuously operative.

This sputtering cathode has a sputtering target having a tubular shape in which the cross-sectional shape thereof has a pair of long side sections facing each other, and an erosion surface facing inward. Using the sputtering target, while moving a body to be film-formed, which has a film formation region having a narrower width than the long side sections of the sputtering target, parallel to one end face of the sputtering target and at a constant speed in a direction perpendicular to the long side sections above a space surrounded by the sputtering target, discharge is performed such that a plasma circulating along the inner surface of the sputtering target is generated, and the inner surface of the long side sections of the sputtering target is sputtered by ions in the plasma generated by a sputtering gas to perform film formation in the film formation region of the body to be film-formed.