Embodiments of a tantalum (Ta) target pasting process for deposition chambers using RF powered processes include pasting at least a portion of the inner surfaces of the process chamber with Ta after using RF sputtering to deposit dielectric material on a wafer. Pressure levels within the process chamber are adjusted to maximize coverage of the Ta pasting layer. The Ta pasting encapsulates the dielectric material that has been inadvertently sputtered on the process chamber inner surfaces such as the shield. Oxygen is then flowed into the process chamber to form a tantalum oxide layer on the Ta pasting layer to further reduce contamination and particle generation.

Embodiments herein include a transparent halo assembly for reducing an amount of sputtered material to minimize particle defects impacting a workpiece. In some embodiments, a halo assembly may include a first halo arranged around a semiconductor workpiece, and a mounting assembly coupling the first halo to a roplat. The first halo may include a first side opposite a second side, and a first end opposite a second end, wherein the first side is operable to receive an ion beam from an ion source. The first halo may further include a plurality of apertures extending between the first and second sides, wherein the plurality of apertures permit passage of a portion of the ion beam to pass therethrough, towards the mounting assembly. In some embodiments, the halo assembly may include a second halo positioned proximate the first halo, and a third halo disposed between the first halo and the mounting assembly.

A film-forming device according to one embodiment includes a chamber body, a support, a moving device, a shielding member, a first holder and a second holder, in the film-forming device, a substrate supported by the support is linearly moved. The shielding member is disposed above an area where the substrate is moved, and includes a slit extending in a direction perpendicular to a movement direction of the substrate. The first holder and the second holder hold a first target and a second target, respectively, above the shielding member. The first target and the second target are arranged symmetrically with respect to a vertical plane including a linear path on which the center of the substrate is moved.

A sputtering device includes a processing chamber where a substrate is accommodated, and a slit plate that partitions the processing chamber into a first space where a target member is disposed and a second space where the substrate is disposed. The slit plate includes an inner member having an opening that penetrates therethrough in a thickness direction of the slit plate, and an outer member disposed around the inner member. The inner member is attachable to and detachable from the outer member.

Bulk acoustic wave resonator structures include a bulk layer with inclined c-axis hexagonal crystal structure piezoelectric material supported by a substrate. The bulk layer may be prepared without first depositing a seed layer on the substrate. The bulk material layer has a c-axis tilt of about 32 degrees or greater. The bulk material layer may exhibit a ratio of shear coupling to longitudinal coupling of 1.25 or greater during excitation. A method for preparing a crystalline bulk layer having a c-axis tilt includes depositing a bulk material layer directly onto a substrate at an off-normal incidence. The deposition conditions may include a pressure of less than 5 mTorr and a deposition angle of about 35 degrees to about 85 degrees.

A sputtering method including: performing a pre-sputtering by emitting sputter particles from a target provided in a sputtering apparatus in a state where the target is shielded by a shielding portion of a shutter provided closed to the target to be capable of opening/closing the target; and, after the pre-sputtering, performing a main-sputtering by emitting the sputter particles from the target in a state where an opening of the shutter is aligned with the target thereby depositing the sputter particles on a substrate. When the pre-sputtering and the main-sputtering are repeatedly performed, a shutter position is changed during the pre-sputtering so as to change a position of the shielding portion aligned with the target.

There is provided a film formation apparatus which forms a film on a substrate by sputtering. The apparatus comprises: a substrate holder configured to hold the substrate; and a plurality of cathodes configured to hold targets that emit sputtered particles, and connected to a power supply. At least one of the plurality of cathodes holds the targets of a plurality of types.

A sputtering target assembly, sputtering apparatus, and method, the target assembly including a backing plate having an aperture formed therein; and a target bonded to a front surface of the backing plate. The aperture is disposed on the backing plate such that a first end of the aperture is sealed by a portion of the target that is predicted by a sputtering target erosion profile to have the highest etching rate during a corresponding sputtering process.

A deposition system, and a method of operation thereof are disclosed. The deposition system comprises a cathode assembly comprising a rotating magnet assembly including a plurality of outer peripheral magnets surrounding an inner peripheral magnet.

A film forming apparatus according to the present invention comprises: a processing chamber; a substrate holder for holding a substrate within the processing chamber; a target electrode, disposed above the substrate holder, for holding a metal target and supplying electrical power from a power source to the target; an oxidizing gas introduction mechanism for supplying an oxidizing gas to the substrate; and a gas supply unit for supplying an inert gas to the space where the target is disposed. Constituent metal is discharged from the target in the form of sputter particles, whereby a metal film is deposited on the substrate, and the metal film is oxidized by the oxidizing gas introduced by the oxidizing gas introduction mechanism, thereby forming a metal oxide film. When the oxidizing gas is introduced, the gas supply unit supplies the inert gas to the space where the target is disposed so that the pressure therein is positive with respect to the pressure in a processing space.