H01J37/3461

PROVIDING VOICE CALL SUPPORT IN A NETWORK
20190174003 · 2019-06-06 ·

Various communication systems may benefit from improved voice call support. For example, it may be helpful for a user equipment in a first radio access technology that may not support voice calls to initiate a voice call with a second radio access technology. A method includes initiating a voice call between a user equipment to an entity in a second radio access technology cell. The user equipment is located in a first radio access technology cell. The method also includes registering the user equipment with the second radio access technology cell. In addition, the method includes conducting the voice call with the entity via the second radio access technology cell.

PLASMA PROCESS APPARATUS

Provided a plasma process apparatus including a chamber including a plasma processing space, a substrate stage included in the chamber, the substrate stage including a seating surface, a target including deposition particles to be deposited on the substrate, a gas supplier configured to supply gas into the chamber, a plasma generator configured to generate plasma from the gas, the plasma generator configured to deposit the deposition particles on the substrate through the plasma, at least one permanent magnet on the target being rotatable and configured to distribute the plasma on the target through a magnetic field, and a coil assembly on an outer wall of the chamber and assembly including first through third side coils inclined and being configured to generate first through third vectors, respectively, and the coil assembly being configured to generate a magnetic field vector guiding the plasma through a combination of the first through third vectors.

STABLE GROUND ANODE FOR THIN FILM PROCESSING
20240194464 · 2024-06-13 ·

An anode for a plasma chamber, having an anode block having a front surface to face a plasma and a rear surface to face away from the plasma; a magnet positioned within the anode block and generating magnetic field lines extending outwardly from the front surface of the anode block; and an electron filter bar spaced apart and extending over the front surface of the anode block and intercepting at least part of the magnetic field lines.

BIAS MAGNETIC FIELD CONTROL METHOD, CONTROL DEVICE, AND SEMICONDUCTOR PROCESS EQUIPMENT
20240191340 · 2024-06-13 ·

A bias magnetic field control method includes: in response to a consumption time length of a material of a target reaching a first preset time length of consuming the material of the target, rotating a bias magnetic field device by a fixed angle along a circumferential direction of a base, and repeatedly rotating the bias magnetic field device after every first preset time length of consuming the material of the target, to periodically change an area, where a bias magnetic field is applied to, of a surface of the target until a total time length of consuming the material of the target accumulates to reach an upper limit. Each time, the bias magnetic field device is rotated in a same direction and each time, a number of substrates is deposited by the material of the target.

PVD plasma control using a magnet edge lift mechanism
10283331 · 2019-05-07 · ·

Apparatus for providing a magnetic field within a process chamber are provided herein. In some embodiments, an apparatus for providing a magnetic field within a process chamber includes: an inner rotating mechanism including a first plate having a central axis, wherein the first plate includes and a first plurality of magnets and is rotatable about the central axis; and an outer lifting mechanism including a ring disposed proximate the first plate, the ring having a second plurality of magnets coupled to a bottom surface of the ring proximate the peripheral edge of the ring, wherein the ring is movable in a direction perpendicular to the first plate.

ANTI-STICTION PROCESS FOR MEMS DEVICE

A method for treating a micro electro-mechanical system (MEMS) component is disclosed. In one example, the method includes the steps of providing a first wafer, treating the first wafer to form cavities and at least an oxide layer on a top surface of the first wafer using a first chemical vapor deposition (CVD) process, providing a second wafer, bonding the second wafer on a top surface of the at least one oxide layer, treating the second wafer to form a first plurality of structures, depositing a layer of Self-Assembling Monolayer (SAM) to a surface of the MEMS component using a second CVD process.

SYSTEMS AND METHODS FOR UNIFORM TARGET EROSION MAGNETIC ASSEMBLIES

In an embodiment, a system includes: a chamber; and a magnetic assembly contained within the chamber. The magnetic assembly comprises: an inner magnetic portion comprising first magnets; and an outer magnetic portion comprising second magnets. At least two adjacent magnets, of either the first magnets or the second magnets, have different vertical displacements, and the magnetic assembly is configured to rotate around an axis to generate an electromagnetic field that moves ions toward a target region within the chamber.

Online adjustable magnet bar

An end-block for rotatably carrying a sputtering target tube and for rotatably restraining a magnet bar inside the sputtering target tube includes a receptacle for receiving a magnet bar fitting. The receptacle comprises a first part of a signal connector arranged to receive a second part of a signal connector from the magnet bar fitting, and allow a signal connector between the end-block and the magnet bar to be formed. The end-block is adapted for providing protection means to the signal connector for protecting it from degradation, destruction or interference of a power and/or data signal transmitted between the end-block and the magnet bar, due to surrounding cooling fluid and/or surrounding high energy fields. The disclosure provides a corresponding magnet bar, and a method for adjusting a magnetic configuration of a magnet bar in a cylindrical sputtering apparatus.

Laterally adjustable return path magnet assembly and methods
10151023 · 2018-12-11 · ·

The invention provides a sputter deposition assembly that includes a sputtering chamber, a sputtering target, and a magnet assembly. The magnet assembly includes a two-part magnetic backing plate that includes first and second plate segments, of which at least one is laterally adjustable. Also provided are methods of operating the sputter deposition assembly.

FLEXIBLE ADJUSTABLE RETURN PATH MAGNET ASSEMBLY AND METHODS
20180323048 · 2018-11-08 ·

The invention provides a sputter deposition assembly that includes a sputtering chamber, a sputtering target, and a magnet assembly. The magnet assembly includes a magnetic backing plate comprising an elongated flexible magnetic control body or a plurality of layered metal sheets.