Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.

An apparatus for sputter deposition of material on a substrate. The apparatus includes a deposition chamber and a cathode array mounted in the deposition chamber. The array has three or more rotating cathodes. Each cathode has a cylindric target of equal target length L.sub.T and a magnetic system. The cathodes are spaced from one another such that their longitudinal axes Y.sub.Cj are arranged parallel to each other, in a distance T.sub.SD from a substrate plane S, and spaced apart along a projection of a substrate axis X in a distance T.sub.TT, whereat each cathode of the cathode array includes a magnetic system. The magnetic system of at least one cathode is swivel mounted round respective cathode axis Y.sub.Cj to swivel the magnetic system into and out of a swivel plane P.sub.TS. A pedestal is designed to support at least one substrate of maximal dimensions x*y to be coated in a static way. The pedestal is positioned in the deposition chamber in front of and centered with reference to the cathode array. At least one pulsed power supply is configured for supplying and controlling a power to at least one of the cathodes.

A sputtering apparatus includes a back plate supporting a sputtering target, a magnet module disposed under the back plate and including a magnet unit reciprocating in a first direction, a first shielding member attached on a portion of the magnet unit, moving together with the magnet unit, and covering at least a portion of the magnet unit, a protective sheet disposed between the back plate and the magnet module, and a second shielding member disposed between the back plate and the magnet module, and having a fixed position.

Embodiments of the disclosure relate to methods for enlarging the opening width of substrate features by reducing the overhang of deposited films. Some embodiments of the disclosure utilize a high power bias pulse to etch the deposited film near the opening of the substrate feature. Some embodiments of the disclosure etch the deposited film without damaging the underlying substrate.

A deposition system is provided capable of measuring at least one of the film characteristics (e.g., thickness, resistance, and composition) in the deposition system. The deposition system in accordance with the present disclosure includes a substrate process chamber. The deposition system in accordance with the present disclosure includes a substrate pedestal in the substrate process chamber, the substrate pedestal configured to support a substrate, and a target enclosing the substrate process chamber. A shutter disk including an in-situ measuring device is provided.

Disclosed herein are systems, methods, devices for a magnet system that includes a housing with a housing interior. The magnet system also includes a magnet holder disposed in the housing interior and supported by the housing, preferably stationary with respect thereto. The magnet system also includes a housing cover forming a fluid-tight chamber when mated with the housing, wherein the housing cover includes a gear stage, a generator, and a rotary coupling that couples the gear stage to the generator.

Disclosed herein are devices, methods, and systems related to a magnetron-target coupling that includes a target coupling flange, a shaft fixedly coupled to the target coupling flange on a face opposite the target coupling flange, and having a first linear bearing component on a face opposite the target coupling flange. The magnetron-target coupling also includes a communication interface having a first communication electrode and a second communication electrode that are electrically coupled to each other wherein the second communication electrode is fixedly attached to the target coupling flange on a side opposite the shaft, the target coupling flange being disposed between the first communication electrode and the second communication electrode. The first communication electrode is supported such that it may be moved toward and/or away from the second communication electrode.

Conventional electrochromic devices frequently suffer from poor reliability and poor performance. Improvements are made using entirely solid and inorganic materials. Electrochromic devices are fabricated by forming an ion conducting electronically-insulating interfacial region that serves as an IC layer. In some methods, the interfacial region is formed after formation of an electrochromic and a counter electrode layer. The interfacial region contains an ion conducting electronically-insulating material along with components of the electrochromic and/or the counter electrode layer. Materials and microstructure of the electrochromic devices provide improvements in performance and reliability over conventional devices. In various embodiments, a counter electrode is fabricated to include a base anodically coloring material and one or more additives.

A magnetron sputtering system includes a substrate mounted within a vacuum chamber. A plurality of cathode assemblies includes a first set of cathode assemblies and a second set of cathode assemblies, and is configured for reactive sputtering. Each cathode assembly includes a target comprising sputterable material and has an at least partially exposed planar sputtering surface. A target support is configured to support the target in the vacuum chamber and rotate the target relative to the vacuum chamber about a target axis. A magnetic field source includes a magnet array. A cathode assemblies controller assembly is operative to actuate the first set of cathode assemblies without actuating the second set of cathode assemblies, and to actuate the second set of cathode assemblies without actuating the first set of cathode assemblies.

The invention provides a sputter deposition assembly that includes a sputtering chamber, a sputtering target, and a magnet assembly. The magnet assembly includes a two-part magnetic backing plate that includes first and second plate segments, of which at least one is laterally adjustable. Also provided are methods of operating the sputter deposition assembly.