A system and a method for detecting abnormality of a thin-film deposition process are provided. In the method, a thin-film is deposited on a substrate in a thin-film deposition chamber by using a target, a dimension of a collimator mounted between the target and the substrate is scanned by using at least one sensor disposed in the thin-film deposition chamber to derive an erosion profile of the target, and abnormality of the thin-film deposition process is detected by analyzing the erosion profile with an analysis model trained with data of a plurality of erosion profiles derived under a plurality of deposition conditions.

Methods for depositing a dielectric oxide layer atop one or more substrates disposed in or processed through a PVD chamber are provided herein. In some embodiments, such a method includes: sputtering source material from a target assembly onto a first substrate while the source material is at a first erosion state and while providing a first amount of RF power to the target assembly to deposit a dielectric oxide layer onto a first substrate having a desired resistance-area; and subsequently sputtering source material from the target assembly onto a second substrate while the source material is at a second erosion state and while providing a second amount of RF power to the target assembly, wherein the second amount of RF power is lower than the first amount of RF power by a predetermined amount calculated to maintain the desired resistance-area.

An apparatus for coating a substrate is provided that includes a racetrack-shaped plasma source having two straight portions and at least one terminal turnaround portion connecting said straight portions. A tubular target formed of a target material that forms a component of the coating has an end. The target is in proximity to the plasma source for sputtering of the target material. The target is secured to a tubular backing cathode, with both being rotatable about a central axis. A set of magnets are arranged inside the cathode to move an erosion zone aligned with the terminal turnaround toward the end of the target as the target is utilized to deposit the coating on the substrate. Target utilization of up to 87 weight percent the initial target weight is achieved.

There is provided a film forming method performed in a film forming apparatus having cathode units capable of installing a plurality of targets. The method comprises performing a film formation process using a first target between the first target and a second target that are disposed at the cathode units and are made of the same material, based on a recipe of the first target, receiving from a user, after a value for managing a lifespan of the first target has reached a predetermined threshold, selection of the second target to be used for the film forming process, and performing the film forming process using the selected second target based on a recipe in which setting of target-related control items of the recipe of the first target is converted for the selected second target.

A backing plate for a sputter target includes a target receiving part for receiving a target to be sputtered, and a structure for exposing the target receiving part through the backing plate.

An object is to extend the life of the target member. The target (TA2) is designed to have a symmetrical structure so as to realize an invertible configuration. According to this, even if the consumption of the target member (71) is large on the side closer to the plasma generation unit where the plasma density is high, the portion of the target member (71) which has been located on the side closer to the film formation object where the plasma density is low and is thus consumed less can be rearranged on the side closer to the plasma generation unit where the plasma density is high, by inverting the target (TA2).

The present invention provides a means capable of determining the surface state of the target to execute accurate and quick cleaning of necessary part. The means includes: a magnet unit capable of forming a magnetic field on the surface of a target; a rotary system capable of driving the magnet unit to change the magnetic field pattern; and an ammeter configured to measure target current when the magnetic field is formed by the magnet unit and discharge voltage is applied to a target electrode to which the target is attached. The position of the magnet unit is variously changed by the rotary system, and the target current is measured at each position and compared with a reference value. It is then determined whether cleaning is necessary at each position, so that cleaning can be performed only for necessary part.

A film forming apparatus includes a processing container, a substrate holder configured to hold a substrate inside the processing container, a cathode unit disposed above the substrate holder, and a gas introducing mechanism configured to introduce a plasma generating gas into the processing container. The cathode unit includes a target, a power supply configured to supply electric power to the target, a magnet provided on a rear side of the target, and a magnet driving part configured to drive the magnet. The magnet driving part includes an oscillation driver configured to oscillate the magnet along the target, and a perpendicular driver configured to drive the magnet in a direction perpendicular to a main surface of the target independently of driving performed by the oscillation driver. Sputtered particles are deposited on the substrate by magnetron sputtering.

A film forming apparatus includes a processing container, a substrate holder configured to hold a substrate inside the processing container, a cathode unit disposed above the substrate holder, and a gas introducing mechanism configured to introduce a plasma generating gas into the processing container. The cathode unit includes a target, a power supply configured to supply electric power to the target, a magnet provided on a rear side of the target, and a magnet driving part configured to drive the magnet. The magnet driving part includes an oscillation driver configured to oscillate the magnet along the target, and a perpendicular driver configured to drive the magnet in a direction perpendicular to a main surface of the target independently of driving performed by the oscillation driver. Sputtered particles are deposited on the substrate by magnetron sputtering.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a housing having a treating space treating a substrate; a support unit supporting the substrate at the treating space; a gas supply unit supplying a process gas into the treating space; and a plasma source generating a plasma from the process gas, and wherein the support unit comprises: a dielectric plate placing the substrate on a top surface thereof; a top ring surrounding a circumference of a substrate placed on the dielectric plate; a temperature sensor measuring a temperature of the top ring; a first lifting/lowering member lifting/lowering the top ring; and a controller, and wherein the controller controls the first lifting/lowering member to change a height of the top ring according to an etching amount of the top ring calculated based on the temperature of the top ring measured by the temperature sensor.