A method for machining a sputtering target that includes a sputtering surface, an opposing surface opposite to the sputtering surface, and an outer peripheral surface being between the sputtering surface and the opposing surface comprises the steps of: fixing the sputtering target on a fixing table by mounting the sputtering surface or the opposing surface of the sputtering target on the fixing table; and cutting the outer peripheral surface of the sputtering target by a cutting tool while rotating the cutting tool along a circumferential direction of the outer peripheral surface of the sputtering target.

Provided are a Mn—Zn—O sputtering target that can be used for DC sputtering and a production method therefor. The Mn—Zn—O sputtering target has a chemical composition containing Mn, Zn, O, and an element X (X is one or two elements selected from the group consisting of W and Mo). A surface to be sputtered of the target has an arithmetic mean roughness Ra of 1.5 μm or less or a maximum height Ry of 10 μm or less.

The manufacturing cost of a sputtering target is reduced and the impurity concentration of the manufactured sputtering target is also reduced. A method of manufacturing a sputtering target includes: surface-treating at least one of a used sputtering target and a scrap material; melting at least one of the used sputtering target and the scrap material after the surface treatment to form an ingot; and manufacturing a sputtering target by subjecting the ingot to forging, rolling, heat treating, and machining.

A sputtering target-backing plate assembly in which a Si sputtering target is bonded to a backing plate by way of a brazing material, wherein the brazing material has a melting point of 200° C. or higher and a bonding strength of 0.16 kgf/cm.sup.2 or higher. An object is to provide a sputtering target-backing plate assembly in which a Si sputtering target is bonded to a backing plate by way of a brazing material, wherein the sputtering target-backing plate assembly has a high bonding strength and is free from separation even under high temperature sputtering conditions such as during high power sputtering.

The present disclosure relates generally to a planar sputtering target. In particular, the present disclosure provides a planar sputtering target comprising a planar sputtering surface and a back surface opposite the planar sputtering surface. The planar sputtering target is formed from a 2N purity tin having an average grain size from at least 10 mm to at most 100 mm. The present disclosure provides a method of manufacturing the tin planar sputtering target having an average grain size from at least 10 mm to at most 100 mm.

A physical vapor deposition (PVD) target that includes a body composed of material that is reactive with an oxygen containing atmosphere; and a non-reactive cap layer encapsulating at least a sputter surface of the body. The non-reactive cap layer is a barrier obstructing the diffusion of oxygen containing species to the body of the PVD target.

Processes for refurbishing a spent sputtering target with a non-circular shape are disclosed. In one form, the processes include the steps of receiving one or more spent sputtering targets, inspecting and weighing the spent sputtering targets, removing any contaminants or other surface impurities from the spent sputtering target surfaces, preparing a hot press die with spacers, disposing the spent sputtering targets in the hot press die, the spacers used to center the spent sputtering targets therein, loading fresh metal refilling powder into the die to account for depleted regions of the spent sputtering targets to produce a powder-filled sputtering target, and applying sufficient heat and force to the filled sputtering target to produce a refurbished sputtering target with homogeneous composition and sufficient adhesion strength.

Provided is a sputtering target that is less likely to cause abnormal discharge. The sputtering target has a sputtering surface in which a lightness L in a Lab color system is more than 27 and 51 or less.

Provided is a sputtering target with which it is possible to form a magnetic thin film having a high coercive force Hc.

The sputtering target is a sputtering target that contains metallic Co, metallic Pt, and an oxide, wherein the sputtering target contains no metallic Cr except inevitable impurities, the oxide is B.sub.2O.sub.3 and the sputtering target comprises 10 to 50 vol % of the oxide.

Provided is a sputtering target with which it is possible to form a magnetic thin film having a high coercive force Hc. The sputtering target is a sputtering target that contains metallic Co, metallic Pt, and an oxide, wherein the sputtering target contains no metallic Cr except inevitable impurities, the oxide has B.sub.2O.sub.3, and the sputtering target comprises 10 to 50 vol % of the oxide.