A sputter trap formed on at least a portion of a sputtering chamber component has a plurality of particles and a particle size distribution plot with at least two different distributions. A method of forming a sputter trap having a particle size distribution plot with at least two different distributions is also provided.

The present invention relates to a process for preparing a tubular article, comprising (a) providing a carrier tube, (b) providing a metal coating on the carrier tube by applying a liquid metal phase onto the carrier tube and solidifying the liquid metal phase, (c) applying a contact pressure to the metal coating by at least one densification tool, and moving the densification tool and the metal coating relative to each other.

A sputtering target according to an embodiment of the present invention includes: a plate-shaped target body formed of a metal material. The target body includes a target portion and a base portion. The target portion has a sputtering surface. The base portion has a cooling surface and includes a gradient strength layer, the cooling surface being positioned on a side opposite to the sputtering surface and having hardness higher than that of the sputtering surface, the gradient strength layer having tensile strength that gradually decreases from the cooling surface toward the target portion.

The present disclosure relates generally to a planar sputtering target. In particular, the present disclosure provides a planar sputtering target comprising a planar sputtering surface and a back surface opposite the planar sputtering surface. The planar sputtering target is formed from a 2N purity tin having an average grain size from at least 10 mm to at most 100 mm. The present disclosure provides a method of manufacturing the tin planar sputtering target having an average grain size from at least 10 mm to at most 100 mm.

A sputtering apparatus is provided with: a vacuum chamber having a target manufactured by sintering raw material powder; a magnet unit having a plurality of magnets disposed on the same surface above the target which is mounted on the vacuum chamber in a non-rotatable manner, in order to cause leakage magnetic field penetrating the target to function in uneven distribution on the sputtering surface; a rotary shaft which is disposed on the center line passing through the center of the target and is coupled to the magnet unit; and a drive motor for driving the rotary shaft to rotate, thereby rotating the magnet unit such that a function region of the leakage magnetic field on the sputtering surface revolves about an imaginary circle with the center of the target serving as the center.

Provided is a tungsten silicide target that efficiently suppresses generation of particles during sputtering deposition. A tungsten silicide target having a two-phase structure of a WSi.sub.2 phase and a Si phase, wherein the tungsten silicide target is represented by a composition formula in an atomic ratio: WSi.sub.x with X>2.0; wherein, when observing a sputtering surface, a ratio of a total area I1 of Si grains having an area per a Si grain of 63.6 m.sup.2 or more to a total area S1 of the Si grains forming the Si phase (I1/S1) is 5% or less; and wherein a Weibull modulus of flexural strength is 2.1 or more.

A method for affixing an RFID tag to sputtering targets is disclosed. A cavity is formed on the back of the backing plate adjacent to the outer edge. Within the cavity, an RFID tag is secured with an encapsulant. The encapsulant is cured with the RFID tag capable of communicating with an associated reader through the encapsulant.

In one embodiment, a physical vapor deposition device includes a phase change material sputtering target includes a primary matrix and at least one additional phase. The primary matrix includes at least one element from Group VI of the periodic table excluding oxygen and one or more elements from Group IV or Group V of the periodic table. The additional phase is substantially homogenously dispersed in the primary matrix.

Provided are a MnZnWO sputtering target having excellent crack resistance and a production method therefor. The MnZnWO sputtering target has a chemical composition containing Mn, Zn, W, and O. From an X-ray diffraction pattern of the MnZnWO sputtering target, a ratio P.sub.MnO/P.sub.W of a maximum peak intensity P.sub.MnO of a peak due to a manganese oxide composed only of Mn and O to a maximum peak intensity P.sub.W of a peak due to W is 0.027 or less.

A cylindrical sputtering target includes a plurality of cylindrical sintered compacts adjacent to each other while having a space therebetween. The plurality of cylindrical sintered compacts have a relative density of 99.7% or higher and 99.9% or lower. The plurality of cylindrical sintered compacts adjacent to each other have a difference therebetween in the relative density of 0.1% or smaller.