Patent classifications
H01J37/3497
PHYSICAL VAPOR DEPOSITION (PVD) CHAMBER WITH IN SITU CHAMBER CLEANING CAPABILITY
Embodiments of process kit shields and process chambers incorporating same are provided herein. In some embodiments a process kit configured for use in a process chamber for processing a substrate includes a shield having a cylindrical body having an upper portion and a lower portion; an adapter section configured to be supported on walls of the process chamber and having a resting surface to support the shield; and a heater coupled to the adapter section and configured to be electrically coupled to at least one power source of the processes chamber to heat the shield.
Plasma generating device, plasma sputtering device, and plasma sputtering method
A plasma sputtering device including one or a plurality of plasma generating devices each including an insulating tube having an expanding inner diameter and having a gas injection port formed in an end portion or a side portion thereof, a first electromagnet or a permanent magnet group which can apply a static magnetic field, and a high frequency antenna; a second electromagnet which is disposed in a region downstream of the plasma generating device(s) and which can form a curved magnetic force line structure; a target mechanism which includes a permanent magnet embedded therein and a cooling mechanism and which can apply a DC or high frequency voltage; a substrate stage facing the target mechanism; a second permanent magnet group around the substrate stage; and a heat insulating mechanism between a target material and the target mechanism.
Cathode assembly, physical vapor deposition system, and method for physical vapor deposition
A cathode assembly for a physical vapor deposition (PVD) system includes a target holder and a thickness detector. The target holder is for holding a target, in which the target has a first major surface and a second major surface. The first major surface and the second major surface are respectively proximal and distal to the target holder. The thickness detector is disposed on the target holder. At least one portion of the first major surface is exposed to the thickness detector for allowing the thickness detector to detect the thickness of the target through the first major surface.
SPUTTERING TARGET WITH BACKSIDE COOLING GROOVES
Implementations of the present disclosure relate to a sputtering target for a sputtering chamber used to process a substrate. In one implementation, a sputtering target for a sputtering chamber is provided. The sputtering target comprises a sputtering plate with a backside surface having radially inner, middle and outer regions and an annular-shaped backing plate mounted to the sputtering plate. The backside surface has a plurality of circular grooves which are spaced apart from one another and at least one arcuate channel cutting through the circular grooves and extending from the radially inner region to the radially outer region of sputtering plate. The annular-shaped backing plate defines an open annulus exposing the backside surface of the sputtering plate.
MEMs frame heating platform for electron imagable fluid reservoirs or larger conductive samples
A heating device having a heating element patterned into a robust MEMs substrate, wherein the heating element is electrically isolated from a fluid reservoir or bulk conductive sample, but close enough in proximity to an imagable window/area having the fluid or sample thereon, such that the sample is heated through conduction. The heating device can be used in a microscope sample holder, e.g., for SEM, TEM, STEM, X-ray synchrotron, scanning probe microscopy, and optical microscopy.
Film forming unit for sputtering apparatus
In a film forming unit (FU) for a sputtering apparatus according to this invention, a supporting plate is provided with: a target having bonded thereto a backing plate; a magnet unit; and driving device for reciprocating the target along the supporting plate relative to the magnet unit. The backing plate is provided, in a protruded manner, with a supply pipe and a discharge pipe in communication with a coolant passage for the backing plate. A slit hole, which is elongated in the reciprocating direction of the target and through which the supply pipe and the discharge pipe penetrate, is formed in the supporting plate. The supporting plate has on its lower surface a cap body which hermetically encloses those portions of the supply pipe and the discharge pipe, inclusive of the slit hole, which are protruded downward from the slit hole.
Physical Vapor Deposition Processing Systems Target Cooling
Physical vapor deposition target assemblies and methods of manufacturing such target assemblies are disclosed. An exemplary target assembly comprises a flow pattern including a plurality of arcs and bends fluidly connected to an inlet end and an outlet end.
Sputtering target with backside cooling grooves
Implementations of the present disclosure relate to a sputtering target for a sputtering chamber used to process a substrate. In one implementation, a sputtering target for a sputtering chamber is provided. The sputtering target comprises a sputtering plate with a backside surface having radially inner, middle and outer regions and an annular-shaped backing plate mounted to the sputtering plate. The backside surface has a plurality of circular grooves which are spaced apart from one another and at least one arcuate channel cutting through the circular grooves and extending from the radially inner region to the radially outer region of sputtering plate. The annular-shaped backing plate defines an open annulus exposing the backside surface of the sputtering plate.
ROTATABLE SPUTTERING TARGET
A rotatable sputtering target has a target material, a back tube and a joint piece. The joint piece is disposed between the target material and the back tube. The joint piece has a compressible structure and an electrically and thermally conductive adhesive. Particularly, the compressible structure being a compressible blanket or a compressible sheet has multiple through holes and thus the electrically and thermally conductive adhesive is filled in the through holes and then directly formed between the target material and the back tube. Using the joint piece to joint the target material and the back tube not only maintains the joint strength but also elevates the tolerable power of the rotatable sputtering target, which can increase the sputtering efficiency.
Physical vapor deposition processing systems target cooling
Physical vapor deposition target assemblies and methods of manufacturing such target assemblies are disclosed. An exemplary target assembly comprises a flow pattern including a plurality of arcs and bends fluidly connected to an inlet end and an outlet end.