The present embodiment relates to an electron multiplier having a structure configured to suppress and stabilize a variation of a resistance value in a wider temperature range. In the electron multiplier, a resistance layer sandwiched between a substrate and a secondary electron emitting layer comprised of an insulating material is configured using a single metal layer in which a plurality of metal particles comprised of a metal material whose resistance value has a positive temperature characteristic are two-dimensionally arranged on a layer formation surface, which is coincident with or substantially parallel to a channel formation surface of the substrate, in the state of being adjacent to each other with a part of the first insulating material interposed therebetween.

According to an embodiment, in a CEM assembly and the like, it is possible to reduce a size of a voltage supply circuit configured to stabilize a voltage to be applied to a channel electron multiplier. The CEM assembly includes a CEM and a voltage supply circuit. The CEM includes an input electrode, a multiplication channel, and an output electrode. The voltage supply circuit includes a power source unit and a constant voltage generation unit. A potential of an input electrode A is set by an electromotive force generated by the power source unit. The constant voltage generation unit includes a constant voltage supply unit configured to cause voltage drop. A target potential set at an output-side reference node is maintained by the voltage drop of the constant voltage supply unit.

The present embodiment relates to an electron multiplier having a structure configured to suppress and stabilize a variation of a resistance value in a wider temperature range. In the electron multiplier, a resistance layer sandwiched between a substrate and a secondary electron emitting layer comprised of an insulating material is configured using a single metal layer in which a plurality of metal particles comprised of a metal material whose resistance value has a positive temperature characteristic are two-dimensionally arranged on a layer formation surface, which is coincident with or substantially parallel to a channel formation surface of the substrate, in the state of being adjacent to each other with a part of the first insulating material interposed therebetween.

The present embodiment relates to an electron multiplier having a structure configured to suppress and stabilize a variation of a resistance value in a wider temperature range. In the electron multiplier, a resistance layer sandwiched between a substrate and a secondary electron emitting layer comprised of an insulating material is configured using a single metal layer in which a plurality of metal particles comprised of a metal material whose resistance value has a positive temperature characteristic are two-dimensionally arranged on a layer formation surface, which is coincident with or substantially parallel to a channel formation surface of the substrate, in the state of being adjacent to each other with a part of the first insulating material interposed therebetween.

According to an embodiment, in a CEM assembly and the like, it is possible to reduce a size of a voltage supply circuit configured to stabilize a voltage to be applied to a channel electron multiplier. The CEM assembly includes a CEM and a voltage supply circuit. The CEM includes an input electrode, a multiplication channel, and an output electrode. The voltage supply circuit includes a power source unit and a constant voltage generation unit. A potential of an input electrode A is set by an electromotive force generated by the power source unit. The constant voltage generation unit includes a constant voltage supply unit configured to cause voltage drop. A target potential set at an output-side reference node is maintained by the voltage drop of the constant voltage supply unit.

A main body portion includes a first plate-shaped member and a second plate-shaped member that are stacked on each other in a second direction to form a first channel and a second channel, the first plate-shaped member includes a first front surface, a first back surface, a first hole portion area, and a first solid area, the second plate-shaped member includes a second front surface, a second back surface, a second hole portion area, and a second solid area, the first hole portion area faces the second solid area, the second hole portion area faces the first solid area.

A main body portion includes a first plate-shaped member and a second plate-shaped member that are stacked on each other in a second direction to form a first channel and a second channel, the first plate-shaped member includes a first front surface, a first back surface, a first hole portion area, and a first solid area, the second plate-shaped member includes a second front surface, a second back surface, a second hole portion area, and a second solid area, the first hole portion area faces the second solid area, the second hole portion area faces the first solid area.

Provided is a compact device which captures, over a large solid angle range, electrically charged particles emitted from a point source and parallelizes the trajectories of said charged particles. The present invention is configured from: an electrostatic lens comprising a plurality of axisymmetric electrodes (10-14) and an axisymmetric aspherical mesh (2) which has a surface that is concave away from the point source; and a flat collimator plate (3) positioned coaxially with the electrostatic lens. The acceptance angle for the electrically charged particles generated from a point source (7) is 30 or greater. The shape of the aspherical mesh (2), and the potentials and the positions of a ground electrode (10) and application electrodes (11-15) are adjusted so that the trajectories of the electrically charged particles are substantially parallelized by the electrostatic lens. The electrostatic lens and the flat collimator plate are positioned on a common axis.

Provided is a compact device which captures, over a large solid angle range, electrically charged particles emitted from a point source and parallelizes the trajectories of said charged particles. The present invention is configured from: an electrostatic lens comprising a plurality of axisymmetric electrodes (10-14) and an axisymmetric aspherical mesh (2) which has a surface that is concave away from the point source; and a flat collimator plate (3) positioned coaxially with the electrostatic lens. The acceptance angle for the electrically charged particles generated from a point source (7) is 30 or greater. The shape of the aspherical mesh (2), and the potentials and the positions of a ground electrode (10) and application electrodes (11-15) are adjusted so that the trajectories of the electrically charged particles are substantially parallelized by the electrostatic lens. The electrostatic lens and the flat collimator plate are positioned on a common axis.

An electron multiplier production method including a main body portion, and a channel provided in the main body portion to open at one end surface and the other end surface of the main body portion and emits secondary electrons includes a first step of preparing a main body member including the one end surface and the other end surface, a communicating hole for the channel through which the one end surface and the other end surface communicate being provided in the main body member, a second step of forming the channel by forming a deposition layer including at least a resistive layer on an outer surface of the main body member and an inner surface of the communicating hole using an atomic layer deposition method, and a third step of forming the main body portion by removing the deposition layer formed on the outer surface of the main body member.