Example embodiments presented herein are directed towards an electron emitter for an x-ray tube. The electron emitter comprises an electrically conductive substrate and a nanostructure material. The nanostructure material is comprised on at least a portion of the electrically conductive substrate. The nanostructure material is made of oxides, nitrides, silicides, selenides or tellurides. Such an electron emitter may be used for hybrid emission, such as Schottky emission or field emission.

The present disclosure generally relates to field emission cathode structure for a field emission arrangement, specifically adapted for enhance reliability and prolong the lifetime of the field emission arrangement by arranging a getter element underneath a gas permeable portion of the field emission cathode structure. The present disclosure also relates to a field emission lighting arrangement comprising such a field emission cathode structure and to a field emission lighting system.

The present disclosure generally relates to field emission cathode structure for a field emission arrangement, specifically adapted for enhance reliability and prolong the lifetime of the field emission arrangement by arranging a getter element underneath a gas permeable portion of the field emission cathode structure. The present disclosure also relates to a field emission lighting arrangement comprising such a field emission cathode structure and to a field emission lighting system.

A field-emission type electron source includes (i) a single-crystal tungsten rod having a sharpened terminus and (ii) a mass of ZrO formed only on a portion of the surface, or the entire surface, of the sharpened terminus. In preferred design, the single-crystal tungsten rod is placed in a gaseous medium that consists of oxygen and a non-oxygen gas. The molar ratio between oxygen and the non-oxygen gas is greater than 1:1.

The present invention relates to the field of field emission lighting, and specifically to a method for forming a field emission cathode. The method comprises arranging a growth substrate in a growth solution comprising a Zn-based growth agent, the growth solution having a pre-defined pH-value at room temperature; increasing the pH value of the growth solution to reach a nucleation phase; upon increasing the pH of the solution nucleation starts. The growth phase is then entered by decreasing the pH. The length of the nanorods is determined by the growth time. The process is terminated by increasing the pH to form sharp tips. The invention also relates to a structure for such a field emission cathode and to a lighting arrangement comprising the field emission cathode.

The present invention provides an emitter made of a hafnium carbide (HfC) single crystal that stably emits electrons with high efficiency, a method for manufacturing the emitter, and an electron gun and an electronic device using the emitter. An emitter according to an embodiment of the present invention is an emitter including a nanowire, in which the nanowire is made of the hafnium carbide (HfC) single crystal, at least an end of the nanowire through which electrons are to be emitted is coated with hafnium oxycarbide (HfC.sub.1-xO.sub.x: 0<x?0.5), and a field electron emission pattern of the end obtained by a field emission microscope (FEM) is a single spot.

A composite including: at least one selected from a silicon oxide of the formula SiO.sub.2 and a silicon oxide of the formula SiO.sub.x wherein 0<x<2; and graphene, wherein the silicon oxide is disposed in a graphene matrix.

A composite including: at least one selected from a silicon oxide of the formula SiO.sub.2 and a silicon oxide of the formula SiO.sub.x wherein 0<x<2; and graphene, wherein the silicon oxide is disposed in a graphene matrix.

A composite including: at least one selected from a silicon oxide of the formula SiO.sub.2 and a silicon oxide of the formula SiO.sub.x wherein 0<x<2; and graphene, wherein the silicon oxide is disposed in a graphene matrix.

Example embodiments presented herein are directed towards an x-ray generating device. The device comprises at least one electron emitter(s) that has an electrically conductive substrate. The electrically conductive substrate comprises a coating of nanostructures. The device further comprises a heating element attached to each electrically conductive substrate. The device further comprises an electron receiving component configured to receive electrons emitted from the at least one electron emitter(s). The device also comprises an evacuated enclosure configured to house the at least one electron emitter(s), the heating element and the electron receiving component. The at least one electron emitter(s) is configured for Schottky emission when the heating element is in an on-state and the at least one electron emitter(s) is negatively biased.