A night vision system along with an image intensifier tube and method for forming the tube are provided. The night vision system incorporates the image intensifier tube in both an analog channel as well as a digital channel, with an addressable display within the analog image intensifier tube analog channel configured to create an electronically addressable output. An analog image intensifier tube is included in the digital imager for presenting binary digital signals representative of an image, or of symbol indicia, and registering those digital representation from the digital imager onto one or more electron multipliers of the analog image intensifier tube within the analog channel. The provided night vision system also utilizes a cathodoluminescent screen, which is a highly efficient light source that reduces system power.

A night vision system along with an image intensifier tube and method for forming the tube are provided. The night vision system incorporates the image intensifier tube in both an analog channel as well as a digital channel, with an addressable display within the analog image intensifier tube analog channel configured to create an electronically addressable output. An analog image intensifier tube is included in the digital imager for presenting binary digital signals representative of an image, or of symbol indicia, and registering those digital representation from the digital imager onto one or more electron multipliers of the analog image intensifier tube within the analog channel. The provided night vision system also utilizes a cathodoluminescent screen, which is a highly efficient light source that reduces system power.

A photocathode epitaxial structure. The photocathode epitaxial structure includes a binary compound substrate material. The photocathode epitaxial structure further includes an active device absorber layer forming a portion of a p-type device photocathode formed on the binary compound substrate material. The active device absorber layer comprising at least a quaternary or greater material structure configured to be lattice matched with the substrate material to reduce strain to allow charge carriers to go further in the active device absorber layer implemented in the photocathode of a nightvision system.

A photocathode is formed with a first absorber assembly on a first substrate for a first spectral band and a second absorber assembled on a second substrate for a second spectral band. The second substrate is different from the first substrate, and the second spectral band is different from the first spectral band. The first absorber and the second absorber can be joined using a direct semiconductor wafer bonding process. The integration of a second absorber such as an SWIR absorber layer can extend the spectral response of image intensifier tubes.

A photocathode epitaxial structure. The photocathode epitaxial structure includes a binary compound substrate material. The photocathode epitaxial structure further includes an active device absorber layer forming a portion of a p-type device photocathode formed on the binary compound substrate material. The active device absorber layer comprising a material structure configured to be lattice matched with the substrate material to reduce strain to allow charge carriers to go further in the active device absorber layer implemented in the photocathode of a nightvision system.

A photocathode epitaxial structure. The photocathode epitaxial structure includes an improved substrate stack. The improved substrate stack includes a GaAs substrate and one or more additional layers formed on the GaAs substrate. The one or more additional layers are configured to provide an improved substrate stack surface with predetermined characteristics for forming a semiconductor device on the improved substrate stack surface. The photocathode epitaxial structure further includes an InGaAs p-type photocathode formed on the improved substrate stack surface. The InGaAs p-type photocathode has a predetermined percentage of In.

Devices include a semiconductor ultraviolet light source; a photocathode attached to the semiconductor ultraviolet light source; an anode; and a separation layer configured to create a vacuum gap between the anode and cathode. The semiconductor ultraviolet light source generates photoelectrons at a surface of the photocathode. The construct is configured together as a monolithic integrated element.

A photocathode epitaxial structure. The photocathode epitaxial structure includes an improved substrate stack. The improved substrate stack includes a GaAs substrate and one or more additional layers formed on the GaAs substrate. The one or more additional layers are configured to provide an improved substrate stack surface with predetermined characteristics for forming a semiconductor device on the improved substrate stack surface. The photocathode epitaxial structure further includes an InGaAs p-type photocathode formed on the improved substrate stack surface. The InGaAs p-type photocathode has a predetermined percentage of In.

An electron beam device has a semiconductor ultraviolet light source (SULS), a photocathode attached to the SULS, a photocathode electrode attached to the photocathode, an anode having a first surface facing towards a first surface of the photocathode, and a separation layer located between and in contact with the first surface of the photocathode and the first surface of the anode. The separation layer is configured to create a gap between the first surface of the photocathode and the first surface of the anode. The SULS generates photoelectrons at the first surface of the photocathode that are transmitted via the gap to the anode. The SULS, the photocathode, the photocathode electrode, the anode, and the separation layer are configured together as a monolithic integrated element. An alternate electron beam device has a SULS spaced from the photocathode, an anode located between the SULS and the photocathode, a controlling electrode located between the anode and the photocathode, and a separation layer located to create a gap.