Patent classifications
H01J2237/0047
Apparatus configured for enhanced vacuum ultraviolet (VUV) spectral radiant flux and system having the apparatus
A charge control apparatus for controlling charge on a substrate in a vacuum chamber is described. The apparatus includes a light source emitting a beam of radiation having a divergence; a mirror configured to reflect the beam of radiation, wherein a curvature of a mirror surface of the curved mirror is configured to reduce the divergence of the beam of radiation; and a mirror support configured to rotatably support the curved mirror, wherein a rotation of the mirror varies the direction of the beam of radiation.
APPARATUS CONFIGURED FOR ENHANCED VACUUM ULTRAVIOLET (VUV) SPECTRAL RADIANT FLUX AND SYSTEM HAVING THE APPARATUS
A charge control apparatus for controlling charge on a substrate in a vacuum chamber is described. The apparatus includes a light source emitting a beam of radiation having a divergence; a mirror configured to reflect the beam of radiation, wherein a curvature of a mirror surface of the curved mirror is configured to reduce the divergence of the beam of radiation; and a mirror support configured to rotatably support the curved mirror, wherein a rotation of the mirror varies the direction of the beam of radiation.
Thermal-aided inspection by advanced charge controller module in a charged particle system
Apparatuses, systems, and methods for providing beams for controlling charges on a sample surface of charged particle beam system. In some embodiments, a module comprising a laser source configured to emit a beam. The beam may illuminate an area adjacent to a pixel on a wafer to indirectly heat the pixel to mitigate a cause of a direct photon-induced effect at the pixel. An electron beam tool configured to detect a defect in the pixel, wherein the defect is induced by the indirect heating of the pixel.
Beam manipulation of advanced charge controller module in a charged particle system
A system and a method for manipulating a beam of an Advanced Charge Controller module in different planes in an e-beam system are provided. Some embodiments of the system include a lens system configured to manipulate a beam in the tangential plane and the sagittal plane such that the beam spot is projected onto the wafer with high luminous energy. Some embodiments of the system include a lens system comprising at least two cylindrical lens.
SYSTEM FOR DISCHARGING AN AREA THAT IS SCANNED BY AN ELECTRON BEAM
A method and a system for imaging an object, the system may include electron optics that may be configured to scan a first area of the object with at least one electron beam; wherein the electron optics may include a first electrode; and light optics that may be configured to illuminate at least one target of (a) the first electrode and (b) the object, thereby causing an emission of electrons between the first electrode and the object.
System for discharging an area that is scanned by an electron beam
A method and a system for imaging an object, the system may include electron optics that may be configured to scan a first area of the object with at least one electron beam; wherein the electron optics may include a first electrode; and light optics that may be configured to illuminate at least one target of (a) the first electrode and (b) the object, thereby causing an emission of electrons between the first electrode and the object.
CHARGED PARTICLE-OPTICAL APPARATUS
A charged particle-optical apparatus for assessing a sample at an assessment location, the charged particle-optical apparatus comprising: an assessment charged particle-optical device configured to project an assessment charged particle beam along an assessment beam path toward an assessment location, the assessment charged particle beam for assessing a sample at the assessment location; a preparatory charged particle-optical device configured to project a preparatory charged particle beam along a preparatory beam path, the preparatory charged particle beam for preparing a sample for assessment; and a light source configured to project a light beam toward an illumination location; wherein a locational relationship between the illumination location and the assessment charged particle-optical device is different from a locational relationship between the assessment location and the assessment charged particle-optical device.
System and method for calibrating charge-regulating module
This invention provides a system and a method for calibrating charge-regulation module in vacuum environment. Means for mounting the charge-regulation module provides motions to the charge-regulation module such that a beam spot, illuminated by the charge-regulation module, on a sample surface can be moved to a pre-determined position which is irradiated by a charged particle beam.
BEAM MANIPULATION USING CHARGE REGULATOR IN A CHARGED PARTICLE SYSTEM
A system and a method for controlling a beam spot of an Advanced Charge Controller module in an electron beam system. The Advanced Charge Controller module includes a MEMS mirror configured to steer and shape the beam in order to perform beam alignment, increase the power density at an area of interest and modulate the power density in real time.
CHARGED PARTICLE-OPTICAL APPARATUS
An electron-optical projection device for projecting a plurality of charged particle beams towards a sample, the device comprising a stack of plates comprising beam directing elements configured to project the plurality of charged particle beams towards a sample location on the sample, wherein at least one plate of the stack comprises a planar optical member configured to direct stimulation light towards the sample location so that the stimulation light is coincident with the plurality of charged particle beams, desirably coincident with the paths of the plurality of charged particle beams towards the sample location, desirably in the at least one plate comprising an optical member is defined a plurality of apertures for respective paths of a plurality charged particle beams.