A semiconductor device according to an embodiment includes: a substrate including a plurality of through holes provided at predetermined intervals along a first direction in a substrate surface and along a second direction intersecting the first direction in the substrate surface; an insulating layer provided on the substrate, the insulating layer being penetrated by the through holes; a plurality of first electrodes provided on the insulating layer, the first electrodes being adjacent to the respective through holes in the first direction; a plurality of second electrodes provided on the insulating layer, the second electrodes being adjacent to the respective through holes in the first direction, the second electrodes being provided to face the first electrodes, the second electrodes being held at a predetermined potential; and a wiring layer provided on the insulating layer, the wiring layer electrically connecting the adjacent second electrodes.

A semiconductor-on-insulator (SOI) substrate includes a handle substrate, a charge-trapping layer located over the handle substrate and including nitrogen-doped polysilicon, an insulating layer located over the charge-trapping layer, and a semiconductor material layer located over the insulating layer. The nitrogen atoms in the charge-trapping layer suppress grain growth during anneal processes used to form the SOI substrate and during subsequent high temperature processes used to form semiconductor devices on the semiconductor material layer. Reduction in grain growth reduces distortion of the SOI substrate, and facilitates overlay of lithographic patterns during fabrication of the semiconductor devices. The charge-trapping layer suppresses formation of a parasitic surface conduction layer, and reduces capacitive coupling of the semiconductor devices with the handle substrate during high frequency operation such as operations in gigahertz range.

A blanking aperture array unit according to the present embodiment includes a chip configured to control a charged particle beam by blanking control of switching whether to irradiate a target with the charged particle beam; a substrate having the chip mounted thereon; a wire configured to electrically connect pads on the chip to the substrate and transmit a control signal for the blanking control from the substrate to the chip through the pads; and a conductive covering member having a first end connected to the substrate and a second end located on the chip, the covering member being provided from the first end to the second end to cover the wire while maintaining electrical insulation from the wire, and at least two end sides of the second end of the covering member are nearer a central portion of the chip than locations of the pads on the chip.

Exemplary semiconductor processing systems may include a remote plasma source. The remote plasma source may include a first plasma block segment defining an inlet to an internal channel of the first plasma block segment. The first plasma block segment may also define a cooling channel between the internal channel of the first plasma block segment and a first exterior surface of the first plasma block segment. The remote plasma source may include a second plasma block segment defining an outlet from an internal channel of the second plasma block segment. The second plasma block segment may also define a cooling channel between the internal channel of the second plasma block segment and a first exterior surface of the second plasma block segment. The systems may include a semiconductor processing chamber defining an inlet fluidly coupled with the outlet from the remote plasma source.

A charged particle beam deflection device includes a substrate; a plurality of apertures provided in the substrate; a plurality of electrodes deflecting charged particle beams passing through the apertures; a plurality of light-receiving elements controlling voltages applied to the plurality of electrodes; a first optical coupler coupling continuous light to the substrate; a light distributor distributing light coupled by the first optical coupler into a two-dimensional plane; a plurality of modulators performing intensity modulation of light distributed by the light distributor; and a plurality of second optical couplers coupling the modulated light to the light-receiving elements.

Provided is a multi-charged-particle beam writing apparatus including: an emitter emitting a charged particle beam; a first shaping aperture array substrate having a plurality of first apertures and forming first multiple beams by passing a part of the charged particle beam through the first apertures, respectively; a second shaping aperture array substrate having second apertures formed at positions corresponding to the respective first apertures and forming second multiple beams by passing at least a part of each of the first multiple beams through corresponding the second apertures, respectively; a blanking aperture array having third apertures formed at positions corresponding to the respective second apertures and including blankers disposed in the respective third apertures to perform blanking deflection on the respective beams of the corresponding second multiple beams; a movable mechanism moving at least one of the first shaping aperture array substrate and the second shaping aperture array substrate; and a controller controlling the movable mechanism.

A multiple electron beam irradiation apparatus includes a shaping aperture array substrate to form multiple primary electron beams, a plurality of electrode array substrates stacked each to dispose thereon a plurality of electrodes each arranged at a passage position of each of the multiple primary electron beams, each of the multiple primary electron beams surrounded by an electrode of the plurality of electrodes when each of the multiple primary electron beams passes through the passage position, the first wiring and the second wiring applied with one of different electric potentials, and a stage to mount thereon a target object to be irradiated with the multiple primary electron beams having passed through the plurality of electrode array substrates, wherein, in each of the plurality of electrode array substrates, each of the plurality of electrodes is electrically connected to either one of the first wiring and the second wiring.

A set of aperture substrates for multiple beams includes a first shaping aperture array substrate including a plurality of first openings, the first shaping aperture array substrate being irradiated with a charged particle beam in a region in which the first openings are formed whereby first multiple beams are formed with a part of the charged particle beams having passed respectively through the first openings, and a second shaping aperture array substrate including a plurality of second openings through which corresponding first multiple beam passes respectively whereby second multiple beams are formed. Each of the second multiple beams is shaped by a pair of opposite sides of the first opening and a pair of opposite sides of the second opening.

Lithographic apparatuses suitable for complementary e-beam lithography (CEBL) are described. In an example, a method of forming a pattern for a semiconductor structure includes forming a pattern of parallel lines above a substrate. The method also includes aligning the substrate in an e-beam tool to provide the pattern of parallel lines parallel with a scan direction of the e-beam tool. The e-beam tool includes a column having a blanker aperture array (BAA) with a staggered pair of columns of openings along an array direction orthogonal to the scan direction. The method also includes forming a pattern of cuts or vias in or above the pattern of parallel lines to provide line breaks for the pattern of parallel lines by scanning the substrate along the scan direction. A cumulative current through the column has a non-zero and substantially uniform cumulative current value throughout the scanning.

An electron beam apparatus including: an electron beam source configured to generate an electron beam; a beam conversion unit including an aperture array configured to generate a plurality of beamlets from the electron beam, and a deflector unit configured to deflect one or more groups of the plurality of beamlets; and a projection system configured to project the plurality of beamlets onto an object, wherein the deflector unit is configured to deflect the one or more groups of the plurality of beamlets to impinge on the object at different angles of incidence, each beamlet in a group having substantially the same angle of incidence on the object.