According to one aspect of the present invention, a multiple charged particle beam writing apparatus includes a subtraction processing circuit configured to subtract a corresponding shared dose from a dose of each of peripheral beams of a defect beam where control of a dose of a beam is disabled and the dose to be irradiated is excessive among the multiple charged particle beams, such that the same dose as an excess dose by the defect beam is shared by the peripheral beams of the defect beam; and a writing mechanism including a stage mounting a target object and a deflector deflecting the multiple charged particle beams and configured to write a pattern on the target object, using the multiple charged particle beams of doses in which the same dose as the excess dose of the defect beam is shared and is subtracted from the doses of the peripheral beams.

According to one embodiment, a beam detector includes a first aperture substrate including a first passage hole smaller than a pitch between beams of a multi charged particle beam, a second aperture substrate including a second passage hole allowing one detection target beam which has passed through the first passage hole, and a sensor detecting a beam current of the detection target beam which has passed through the second passage hole. The second aperture substrate has light permeability, and includes a conductive material.

According to one embodiment, a charged particle beam deflection device includes a substrate, a plurality of charged particle beam transmission apertures provided in the substrate, a plurality of electrode pairs deflecting charged particle beams passing through the charged particle beam transmission apertures, a light receiving element controlling a voltage applied to one electrode of the electrode pair, and an optical waveguide providing an optical signal to the light receiving element. A distance between the charged particle beam transmission aperture and the light receiving element is shorter than a distance between mutually-adjacent charged particle beam transmission apertures.

A multi-beam apparatus for multi-beam inspection with an improved source conversion unit providing more beamlets with high electric safety, mechanical availability and mechanical stabilization has been disclosed. The source-conversion unit comprises an image-forming element array having a plurality of image-forming elements, an aberration compensator array having a plurality of micro-compensators, and a pre-bending element array with a plurality of pre-bending micro-deflectors. In each of the arrays, adjacent elements are placed in different layers, and one element may comprise two or more sub-elements placed in different layers. The sub-elements of a micro-compensator may have different functions such as micro-lens and micro-stigmators.

According to one embodiment, a charged particle beam deflection device includes a substrate, a plurality of charged particle beam transmission apertures provided in the substrate, a plurality of electrode pairs deflecting charged particle beams passing through the charged particle beam transmission apertures, a light receiving element controlling a voltage applied to one electrode of the electrode pair, and an optical waveguide providing an optical signal to the light receiving element. A distance between the charged particle beam transmission aperture and the light receiving element is shorter than a distance between mutually-adjacent charged particle beam transmission apertures.

Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool includes a first column of openings along a first direction and having a pitch. The BAA also includes a second column of openings along the first direction and staggered from the first column of openings. The second column of openings has the pitch. A scan direction of the BAA is along a second direction, orthogonal to the first direction.

A semiconductor-on-insulator (SOI) substrate includes a handle substrate, a charge-trapping layer located over the handle substrate and including nitrogen-doped polysilicon, an insulating layer located over the charge-trapping layer, and a semiconductor material layer located over the insulating layer. The nitrogen atoms in the charge-trapping layer suppress grain growth during anneal processes used to form the SOI substrate and during subsequent high temperature processes used to form semiconductor devices on the semiconductor material layer. Reduction in grain growth reduces distortion of the SOI substrate, and facilitates overlay of lithographic patterns during fabrication of the semiconductor devices. The charge-trapping layer suppresses formation of a parasitic surface conduction layer, and reduces capacitive coupling of the semiconductor devices with the handle substrate during high frequency operation such as operations in gigahertz range.

A charged particle beam lithography apparatus, includes a plurality of multiple-beam sets, each of which including a plurality of irradiation sources each generating an independent charged particle beam, a plurality of objective deflectors, each arranged for a corresponding charged particle beam, and configured to deflect the corresponding charged particle beam to a desired position on a substrate, and a plurality of electrostatic or electromagnetic lens fields each to focus the corresponding charged particle beam on the target object; a plurality of common deflection amplifiers, arranged for each multiple-beam set, and each of the plurality of common deflection amplifiers being configured to commonly control the plurality of objective deflectors arranged in a same multiple-beam set; a plurality of individual ON/OFF mechanisms configured to individually turn ON/OFF a beam irradiated from each irradiation source; and one or more multiple-beam clusters including the plurality of multiple-beam sets.

A multiple charged particle beam writing apparatus includes a rotatable shaping aperture array substrate, including plural openings, to form/shape multiple beams by letting portions of a charged particle beam individually pass through the plural openings, a data rotation correction circuitry to read writing data from a storage device, and generate pattern data, in which the entire figure pattern has been reversely rotated against a rotational deviation direction of an aperture array image by a rotational deviation amount of the aperture array image, using information on the rotational deviation amount of the aperture array image of the multiple beams on the target object caused by a residual error of rotation adjustment of the shaping aperture array substrate, and a blanking aperture array mechanism, rotatable with the shaping aperture array substrate, to provide individual blanking control of the multiple beams, based on the pattern data of the figure pattern reversely rotated.

In one embodiment, an aperture set for multi-beam includes a shaping aperture array in which a plurality of first openings are formed, and which forms a multi-beam by allowing part of a charged particle beam to pass through corresponding ones of the plurality of first openings, a blanking aperture array in which a plurality of second openings are formed, the plurality of second openings each including a pair of blanking electrodes that perform blanking deflection of a beam, and an electric field shield plate that is disposed to be opposed to the blanking aperture array and includes a plurality of third openings. The electric field shield plate has a substrate, and a high resistance film provided on a surface of the substrate, the surface being opposed to the blanking aperture array, and the high resistance film has a higher electrical resistance value than an electrical resistance value of the substrate.