Patent classifications
H01J2237/0453
PATTERN INSPECTION APPARATUS AND PATTERN INSPECTION METHOD
A pattern inspection apparatus includes a secondary electron image acquisition mechanism to include a deflector deflecting multiple primary electron beams and a detector detecting multiple secondary electron beams, and acquire a secondary electron image corresponding to each of the multiple primary electron beams by scanning a target object with a pattern thereon with the multiple primary electron beams by the deflector, and detecting the multiple secondary electron beams from the target object by the detector, a storage device to store individual correction kernels each generated for individually adjusting a secondary electron image corresponding to each primary electron beam concerning a reference pattern to be commensurate with a reference blurred image, and a correction circuit to correct, by correspondingly using the individual correction kernel, the secondary electron image corresponding to each primary electron beam acquired from the inspection target object.
CHARGED PARTICLE ASSESSMENT TOOL, INSPECTION METHOD
A charged-particle tool including: a condenser lens array configured to separate a beam of charged particles into a first plurality of sub-beams along a respective beam path and to focus each of the sub-beams to a respective intermediate focus; an array of objective lenses, each objective lens configured to project one of the plurality of sub-beams onto a sample; a corrector including an array of elongate electrodes, the elongate electrodes extending substantially perpendicular to the beam paths of the first plurality of sub-beams and arranged such that a second plurality of the sub-beams propagate between a pair of the elongate electrodes, the second plurality of sub-beams being a subset of the first plurality of sub-beams; and an electric power supply configured to apply a potential difference between the pair of elongate electrodes so as to deflect the second plurality of sub-beams by a desired amount.
PARTICLE BEAM SYSTEM WITH MULTI-SOURCE SYSTEM AND MULTI-BEAM PARTICLE MICROSCOPE
A particle beam system includes a multi-source system. The multi-source system comprises an electron emitter array as a particle multi-source. The inhomogeneous emission characteristics of the various emitters in this multi-source system are correctable, or pre-correctable for subsequent particle-optical imaging, via particle-optical components that are producible via MEMS technology. A beam current of the individual particle beams is adjustable in the multi-source system.
METHOD TO CORRECT FIRST ORDER ASTIGMATISM AND FIRST ORDER DISTORTION IN MULTI-BEAM SCANNING ELECTRON MICROSCOPES
An example multi-beam scanning electron microscope (MB-SEM) for correcting both astigmatism and linear distortion at least includes an electron source coupled to provide an electron beam, an aperture plate comprising an array of apertures, the aperture plate arranged to form an array of electron beamlets from the electron beam, and an electron column including a plurality of lenses and first and second stigmators, the electron column coupled to direct the array of electron beamlets toward a sample, wherein the first and second stigmators are arranged and excited to correct both astigmatism and linear distortion.
PARTICLE BEAM COLUMN
A particle beam column generates a particle beam of charged particles, for example electrons or ions, and direct it onto a sample. The particle beam column comprises a multi-aperture stop and a deflection system for selectively steering the particle beam through one of a plurality of apertures provided in the multi-aperture stop. The apertures have different sizes in order to limit the current strength of the particle beam to different values. The particle beam column furthermore comprises a lens for changing the divergence angle of the particle beam upstream of a first stop. The lens can comprise a magnetic lens, which comprises a magnetic core with a plurality of parts, which are electrically insulated from one another and can have substantially different electrical potentials during operation. Some of the parts of the magnetic core can have the same electrical potential as the first stop during operation.
HIGH RESOLUTION, MULTI-ELECTRON BEAM APPARATUS
For an electron beam system, a Wien filter is in the path of the electron beam between a transfer lens and a stage. The system includes a ground electrode between the Wien filter and the stage, a charge control plate between the ground electrode and the stage, and an acceleration electrode between the ground electrode and the charge control plate. The system can be magnetic or electrostatic.
Particle beam system and method for the particle-optical examination of an object
A particle beam system includes a particle source to produce a first beam of charged particles. The particle beam system also includes a multiple beam producer to produce a plurality of partial beams from a first incident beam of charged particles. The partial beams are spaced apart spatially in a direction perpendicular to a propagation direction of the partial beams. The plurality of partial beams includes at least a first partial beam and a second partial beam. The particle beam system further includes an objective to focus incident partial beams in a first plane so that a first region, on which the first partial beam is incident in the first plane, is separated from a second region, on which a second partial beam is incident. The particle beam system also a detector system including a plurality of detection regions and a projective system.
Multiple charged-particle beam apparatus with low crosstalk
Systems and methods of enhancing imaging resolution by reducing crosstalk between detection elements of a secondary charged-particle detector in a multi-beam apparatus are disclosed. The multi-beam apparatus may comprise an electro-optical system for projecting a plurality of secondary charged-particle beams from a sample onto a charged-particle detector. The electro-optical system may include a first pre-limit aperture plate comprising a first aperture configured to block peripheral charged-particles of the plurality of secondary charged-particle beams, and a beam-limit aperture array comprising a second aperture configured to trim the plurality of secondary charged-particle beams. The charged-particle detector may include a plurality of detection elements, wherein a detection element of the plurality of detection elements is associated with a corresponding trimmed beam of the plurality of secondary charged-particle beams.
Aberration corrector and multiple electron beam irradiation apparatus
Aberration corrector includes a lower electrode substrate to be formed therein with plural first passage holes having a first hole diameter and making multiple electron beams pass therethrough, and to be arranged thereon plural electrode sets each being plural electrodes of four or more poles, surrounding a first passage hole, for each of the plural first passage holes, and an upper electrode substrate above the lower one, to be formed therein with plural second passage holes making multiple electron beams pass therethrough, whose size from the top of the upper electrode substrate to the middle of way to the back side of the upper electrode substrate is a second hole diameter, and whose size from the middle to the back side is a third hole diameter larger than each of the first and second hole diameters, wherein a shield electrode is on inner walls of plural second passage holes.
CHARGED PARTICLE BEAM APPARATUS, MULTI-BEAMLET ASSEMBLY, AND METHOD OF INSPECTING A SPECIMEN
A charged particle beam apparatus for inspecting a specimen with a plurality of beamlets is described. The charged particle beam apparatus includes a charged particle beam emitter (105) for generating a charged particle beam (11) propagating along an optical axis (A) and a multi-beamlet generation- and correction-assembly (120), including a first multi-aperture electrode (121) with a first plurality of apertures for creating the plurality of beamlets from the charged particle beam, at least one second multi-aperture electrode (122) with a second plurality of apertures of varying diameters for the plurality of beamlets for providing a field curvature correction, and a plurality of multipoles (123) for individually influencing each of the plurality of beamlets, wherein the multi-beamlet generation- and correction-assembly (120) is configured to focus the plurality of beamlets to provide a plurality of intermediate beamlet crossovers. The charged particle beam apparatus further includes an objective lens (150) for focusing each of the plurality of beamlets to a separate location on the specimen, and a single transfer lens (130) for beamlet collimation arranged between the multi-beamlet generation- and correction-assembly and the objective lens. Further, a method of inspecting a specimen with a charged particle beam apparatus is described.