A method for operating a particle beam microscopy system includes recording a first particle-microscopic image at a given first focus and varying the excitations of the first deflection device within a given first range. The method also includes changing the focus to a second focus, and determining a second range of excitations of the first deflection device on the basis of the first range, the first excitation, the second excitation and a machine parameter determined in advance. The method further includes recording a second particle-microscopic image at the second focus and varying the excitations of the first deflection device within the determined second range. The second range of excitations is determined so that a region of the object represented in the second particle-microscopic image was also represented in the first particle-microscopic image.

An apparatus may include a resonator chamber, arranged in a vacuum enclosure; an RF electrode assembly, arranged within the vacuum enclosure; and a resonator coil, disposed within the resonator chamber, the resonator coil having a high voltage end, directly connected to at least one RF electrode of the RF electrode assembly.

The embodiments of the present disclosure provide various techniques for detecting backscatter charged particles, including accelerating charged particle sub-beams along sub-beam paths to a sample, repelling secondary charged particles from detector arrays, and providing devices and detectors which can switch between modes for primarily detecting charged particles and modes for primarily detecting secondary particles.

A particle-optical arrangement comprises a charged-particle source for generating a beam of charged particles; a multi-aperture plate arranged in a beam path of the beam of charged particles, wherein the multi-aperture plate has a plurality of apertures formed therein in a predetermined first array pattern, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the multi-aperture plate, and wherein a plurality of beam spots is formed in an image plane of the apparatus by the plurality of beamlets, the plurality of beam spots being arranged in a second array pattern; and a particle-optical element for manipulating the beam of charged particles and/or the plurality of beamlets; wherein the first array pattern has a first pattern regularity in a first direction, and the second array pattern has a second pattern regularity in a second direction electron-optically corresponding to the first direction, and wherein the second regularity is higher than the first regularity.

An apparatus may include an ion source, arranged to generate an ion beam at a first ion energy. The apparatus may further include a DC accelerator column, disposed downstream of the ion source, and arranged to accelerate the ion beam to a second ion energy, the second ion energy being greater than the first ion energy. The apparatus may include a linear accelerator, disposed downstream of the DC accelerator column, the linear accelerator arranged to accelerate the ion beam to a third ion energy, greater than the second ion energy.

A system and apparatus for electron beam melting comprises a superconducting radio frequency accelerator configured to produce an electron beam, a conduction cooling system configured to cool the superconducting radio frequency accelerator, and an electron beam melting system wherein the electron beam melts power in a build chamber of the electron beam melting apparatus.

An ion implantation method includes measuring a beam energy of an ion beam that is generated by a high-energy multistage linear acceleration unit operating in accordance with a tentative high-frequency parameter, adjusting a value of the high-frequency parameter based on the measured beam energy, and performing ion implantation by using the ion beam generated by the high-energy multistage linear acceleration unit operating in accordance with the adjusted high-frequency parameter. The tentative high-frequency parameter provides a value different from a value of the high-frequency parameter for achieving a maximum acceleration in design to a high-frequency resonator in a part of stages including at least a most downstream stage. The adjusting includes changing at least one of a voltage amplitude and a phase set for the high-frequency resonator in the part including the at least most downstream stage.

An electron emission tube includes a housing in which an internal space is provided and which keeps the internal space in vacuum, an electron source that is arranged on a first end side in one direction of the housing and that generates an electron, a gate valve that is arranged on a second end side in the one direction of the housing and that can switch the second end side between an open state and a blocked state, and a partition part that is placed between the electron source and the gate valve and that divides the internal space into a first region including the electron source and a second region including the gate valve. The partition part includes an electron-permeable membrane that transmits an electron.

A charged particle apparatus configured to project a multi-beam of charged particles along a multi-beam path toward a sample, the charged particle apparatus comprising: a charged particle source configured to emit a charged particle beam toward a sample; a charged particle-optical device configured to project sub-beams of a multi-beam of charged particles along the multi-beam path toward the sample, the sub-beams of the multi-beam of charged particles derived from the charged particle beam; a tube surrounding the multi-beam path configured to operate at a first potential difference from a ground potential; and a support configured to support the sample at a second potential difference from the ground potential, the first potential difference and the second potential difference having a difference so as to accelerate the multi-beam of charged particles towards the sample; wherein the first potential difference is greater than the second potential difference.

Provided are a structure for particle acceleration and a charged particle beam apparatus, which enable the suppression of electric field concentration occurring near a negative electrode part. The structure for particle acceleration includes: a ceramic body 1 having a through hole 10 formed by an inner wall surface; and a negative electrode 2 and a positive electrode 3 which are arranged, respectively, on one end and the other end of the through hole 10 in the ceramic body. The inner wall surface of the ceramic body 1 is configured such that a first region 22, which is electrically connected with the negative electrode 2, and a second region 23, which is electrically connected with the positive electrode 3, are electrically connected to each other. The surface resistivity of the first region 22 is lower than the surface resistivity of the second region 23.