Provided herein are approaches for increasing operational range of an electrostatic lens. An electrostatic lens of an ion implantation system may receive an ion beam from an ion source, the electrostatic lens including a first plurality of conductive beam optics disposed along one side of an ion beam line and a second plurality of conductive beam optics disposed along a second side of the ion beam line. The ion implantation system may further include a power supply in communication with the electrostatic lens, the power supply operable to supply a voltage and a current to at least one of the first and second plurality of conductive beam optics, wherein the voltage and the current deflects the ion beam at a beam deflection angle, and wherein the ion beam is accelerated and then decelerated within the electrostatic lens.

An electron beam inspection apparatus includes a plurality of electrodes to surround an inspection substrate placed on a stage, a camera to measure, for each of the plurality of electrodes, a gap between a peripheral edge of the inspection substrate and an electrode of the plurality of electrodes, a retarding potential application circuit to apply a retarding potential to the inspection substrate, an electrode potential application circuit to apply, to each electrode, a corresponding potential of potentials each obtained by adding an offset potential, which is variable according to a measured gap, to the retarding potential to be applied to the inspection substrate, and an electron optical system to irradiate the inspection substrate with electron beams, in the state where the retarding potential has been applied to the inspection substrate and the corresponding potential of the potentials has been individually applied to each of the plurality of electrodes.

A scanning electron microscope with a composite detection system and a specimen detection method. The scanning electron microscope includes a composite objective lens system including an immersion magnetic lens and an electro lens, configured to focus an initial electron beam to a specimen to form a convergent beam spot; a composite detection system located in the composite objective lens system; and a detection signal amplification and analysis system. A magnetic field of the immersion magnetic lens is immersed in the specimen; the electro lens is configured to decelerate the initial electron beam and focus the initial electron beam onto the specimen, and separate BSEs from a transmission path of an X-ray; the composite detection system is located below an inner pole piece of the immersion magnetic lens, is located above the control electrode, and includes an annular BSE detector and an annular X-ray detector that have a same axis center.

A charged particle assessment tool includes: an objective lens configured to project a plurality of charged particle beams onto a sample, the objective lens having a sample-facing surface defining a plurality of beam apertures through which respective ones of the charged particle beams are emitted toward the sample; and a plurality of capture electrodes adjacent respective ones of the beam apertures and configured to capture charged particles emitted from the sample.

The invention relates to a method of manufacturing a charged particle detector, comprising the steps of providing a sensor device, such as an Active Pixel Sensor (APS). Said sensor device at least comprises a substrate layer and a sensitive layer. The method further comprises the step of providing a mechanical supporting layer and connecting said mechanical supporting layer to said sensor device. After connection, the sensitive layer is situated in between said substrate layer and said mechanical supporting layer. By connecting the mechanical supporting layer, it is possible to thin said substrate layer for forming said charged particle detector. The mechanical supporting layer forms part of the manufactured detector. The detector can be used in a charged particle microscope, such as a Transmission Electron Microscope for direct electron detection.

Provided herein are approaches for increasing operational range of an electrostatic lens. An electrostatic lens of an ion implantation system may receive an ion beam from an ion source, the electrostatic lens including a first plurality of conductive beam optics disposed along one side of an ion beam line and a second plurality of conductive beam optics disposed along a second side of the ion beam line. The ion implantation system may further include a power supply in communication with the electrostatic lens, the power supply operable to supply a voltage and a current to at least one of the first and second plurality of conductive beam optics, wherein the voltage and the current deflects the ion beam at a beam deflection angle, and wherein the ion beam is accelerated and then decelerated within the electrostatic lens.

Provided herein are approaches for in-situ plasma cleaning of ion beam optics. In one approach, a system includes a component (e.g., a beam-line component) of an ion implanter processing chamber. The system further includes a power supply for supplying a first voltage and first current to the component during a processing mode and a second voltage and second current to the component during a cleaning mode. The second voltage and current are applied to one or more conductive beam optics of the component, individually, to selectively generate plasma around one or more of the one or more conductive beam optics. The system may further include a flow controller for adjusting an injection rate of an etchant gas supplied to the beam-line component, and a vacuum pump for adjusting pressure of an environment of the beam-line component.

Provided herein are approaches for reducing particles in an ion implanter. In some embodiments, an electrostatic filter of the ion implanter may include a housing and a plurality of conductive beam optics within the housing, the plurality of conductive beam optics arranged around an ion beam-line. At least one conductive beam optic of the plurality of conductive beam optics may include a conductive core element, a resistive material disposed around the conductive core, and a conductive layer disposed around the resistive material.

A charged particle beam device includes: a charged particle source that emits a charged particle beam; a boosting electrode disposed between the charged particle source and a sample to form a path of the charged particle beam and to accelerate and decelerate the charged particle beam; a first pole piece that covers the boosting electrode; a second pole piece that covers the first pole piece; a first lens coil disposed outside the first pole piece and inside the second pole piece to form a first lens; a second lens coil disposed outside the second pole piece to form a second lens; and a control electrode formed between a distal end portion of the first pole piece and a distal end portion of the second pole piece to control an electric field formed between the sample and the distal end portion of the second pole piece.

Provided herein are approaches for reducing particles in an ion implanter. In some embodiments, an electrostatic filter of the ion implanter may include a housing and a plurality of conductive beam optics within the housing, the plurality of conductive beam optics arranged around an ion beam-line. At least one conductive beam optic of the plurality of conductive beam optics may include a conductive core element, a resistive material disposed around the conductive core, and a conductive layer disposed around the resistive material.