A detector device (10) for detecting signal electrons in an electron beam apparatus (100) is described. The detector device (10) includes an electron detector (120) with a central opening (23) for the passage of a primary electron beam (105) and with one or more radially inner detector segments (21) and one or more radially outer detector segments (22) that at least partially surrounds the central opening. The detector device is configured to amplify one or more first detector signals caused by a first group of signal electrons impinging on the one or more radially inner detector segments (21) with a first amplification strength while amplifying one or more second detector signals caused by a second group of signal electrons impinging on the one or more radially outer detector segments (22) with a second amplification strength higher than the first amplification strength. Further described is an electron beam apparatus with the detector device described herein, as well as a method of imaging and/or inspecting a sample with an electron beam apparatus as described herein.

Systems and methods of reducing the Coulomb interaction effects in a charged particle beam apparatus are disclosed. The charged particle beam apparatus may comprise a charged particle source and a source conversion unit comprising an aperture-lens forming electrode plate configured to be at a first voltage, an aperture lens plate configured to be at a second voltage that is different from the first voltage for generating a first electric field, which enables the aperture-lens forming electrode plate and the aperture lens plate to form aperture lenses of an aperture lens array to respectively focus a plurality of beamlets of the charged particle beam, and an imaging lens configured to focus the plurality of beamlets on an image plane. The charged particle beam apparatus may comprise an objective lens configured to focus the plurality of beamlets onto a surface of the sample and form a plurality of probe spots thereon.

A multi-beam particle microscope comprising a particle source configured to emit charged particles, and a multi-aperture arrangement configured to generate a first field of a multiplicity of charged first individual particle beams from the charged particles. A beam tube portion is arranged between the particle source and the multi-aperture arrangement. A condenser lens system with a magnetic lens can be arranged in the region of the beam tube portion. The beam tube portion comprises pure titanium or a titanium alloy, or the beam tube portion consists of pure titanium or a titanium alloy. The permeability coefficient of the pure titanium or of the titanium alloy is 1.0005 or less, such as 1.00005 or less. This can help make it possible to generate individual particle beams of better quality.

This charged particle beam device comprises: a charged particle beam source that generates charged particle beams; an objective lens in which coil current is inputted to focus the charged particle beams on a sample; a control unit that controls the coil current; a hysteresis characteristics storage unit that stores hysteresis characteristics information of the objective lens; a history information storage unit that stores history information relating to the coil current; and an estimating unit that estimates the magnetic field generated by the objective lens based on the coil current, the history information, and the hysteresis characteristic information, and has a magnetic field correction unit that, when the absolute value of the change amount of the coil current is greater than a prescribed value, further adds to the magnetic field estimated by the estimating unit a correction value according to the coil current and its change amount, correcting the magnetic field generated by the objective lens.

In one embodiment, a multi charged particle beam irradiation apparatus includes an optical system including three or more focus correcting lenses configured to adjust multiple beams, and a lens control circuit. A virtual crossover as viewed from a downstream side of the multiple beams is formed in an anterior focal plane of a lowermost objective lens. The multiple beams are perpendicularly incident on the sample surface. An actual crossover (CO2r) is located between a principal surface of an uppermost focus correcting lens and a principal surface of a lowermost focus correcting lens. The lens control circuit is configured to control a voltage applied to or a current passed through each of the focus correcting lenses such that a predetermined rotation angle condition, a condition under which a virtual crossover (CO2) as viewed from the downstream side is unchanged, and an in-focus condition are satisfied.

The present description concerns an electron beam device (100) comprising: a treatment chamber (130) having a longitudinal direction (Z); at least one electron beam source (110), each source being adapted to emitting an electron beam in a beam plane (PF) substantially transverse to the longitudinal direction so as to induce a plasma or an evaporation point in the treatment chamber for the treatment of a surface of a part (106); at least one first port (122) for the passage of the electron beam into said treatment chamber, the diameter of the minimum circle in which said first port is inscribed being smaller than or equal to one eighth, for example smaller than or equal to one tenth, of the smallest dimension (D3) of a transverse cross-section of the treatment chamber taken in the beam plane.

A method for correcting aberrations in a charged particle spectrometer includes receiving, by the charged particle spectrometer, a charged particle beam along an axis and applying a first decapole field to the charged particle beam by a first optical correction element of the charged particle spectrometer. At least a portion of the first optical correction element is positioned before a line focus of the charged particle beam in a dispersion plane on the axis and a cross-over location on the axis such that the first decapole field partially attenuates a fourth order aberration associated with the charged particle beam. The method includes increasing a dispersion and applying a second decapole field to the charged particle beam by a second optical correction element of the spectrometer such that the second optical correction element is positioned after the cross-over such that the second decapole field further attenuates the fourth order aberration.

An ion implantation system has a first linear accelerator for accelerating ions of an ion beam to a first energy along a beam path. A second linear accelerator positioned downstream of the first linear accelerator along the beam path accelerates the ions to a second energy. A charge stripper has a stripper tube with a passageway positioned between the first and second linear accelerators. A charge stripping medium is provided in the passageway to strip at least one electron from the ions as the ion beam passes through the charge stripping medium. A focusing apparatus is associated with the stripper tube to control a trajectory of the ions within the passageway of the stripper tube. The focusing apparatus can be two or more quadrupoles and include an electrostatic lens, a magnet, a solenoid, or a Einzel lens.