Ion implantation systems and processes are disclosed. An exemplary ion implantation system may include an ion source, an extraction manipulator, a magnetic analyzer, and an electrode assembly. The extraction manipulator may be configured to generate an ion beam by extracting ions from the ion source. A cross-section of the generated ion beam may have a long dimension and a short dimension orthogonal to the long dimension of the ion beam. The magnetic analyzer may be configured to focus the ion beam in an x-direction parallel to the short dimension of the ion beam. The electrode assembly may be configured to accelerate or decelerate the ion beam. One or more entrance electrodes of the electrode assembly may define a first opening and the electrode assembly may be positioned relative to the magnetic analyzer such that the ion beam converges in the x-direction as the ion beam enters through the first opening.

The invention relates to a method and a device for manipulation of one or more charged particle beams of a plurality of charged particle beamlets in a charged particle multi-beamlet apparatus. The manipulator device comprises a planar substrate comprising an array of through openings in the plane of the substrate, each of these through openings is arranged for passing the at least one charged particle beamlet there through, wherein each of the through openings is provided with one or more electrodes arranged around the through opening, and a electronic control circuit for providing control signals to the one or more electrodes of each through opening, wherein the electronic control circuit is arranged for providing the one or more electrodes of each individual through opening with an at least substantially analog adjustable voltage.

Beamlets are generated from the electron beam using an aperture array downstream of the single global collimated lens. The beamlets are directed through an image lens array in a path of the beamlets downstream of the aperture array that individually focuses the beamlets onto the intermediate image plane with the image lens array. The beamlets are then directed at a workpiece on a stage using a transfer lens array downstream of the image lens array. A path of the beamlets does not include a crossover.

A multi-beam apparatus for observing a sample with high resolution and high throughput is proposed. In the apparatus, a source-conversion unit changes a single electron source into a virtual multi-source array, a primary projection imaging system projects the array to form plural probe spots on the sample, and a condenser lens adjusts the currents of the plural probe spots. In the source-conversion unit, the image-forming means is on the upstream of the beamlet-limit means, and thereby generating less scattered electrons. The image-forming means not only forms the virtual multi-source array, but also compensates the off-axis aberrations of the plurality of probe spots.

A multi-beam apparatus for observing a sample with high resolution and high throughput and in flexibly varying observing conditions is proposed. The apparatus uses a movable collimating lens to flexibly vary the currents of the plural probe spots without influencing the intervals thereof, a new source-conversion unit to form the plural images of the single electron source and compensate off-axis aberrations of the plural probe spots with respect to observing conditions, and a pre-beamlet-forming means to reduce the strong Coulomb effect due to the primary-electron beam.

An apparatus for removing static electricity of a semiconductor substrate, which removes static electricity embedded inside a thin film on the semiconductor substrate by emitting vacuum ultraviolet (VUV) light to the semiconductor substrate disposed inside a vacuum chamber. The apparatus includes: a VUV generator disposed at an upper side of the vacuum chamber and provided with a VUV lamp configured to emit small-area VUV light into an inside of the vacuum chamber; and a light diffusion unit disposed below the VUV generator and configured to diffuse incident VUV light into a wide area and output the diffused VUV light to the semiconductor substrate disposed below the light diffusion unit.

The present disclosure relates to an apparatus and method that manipulate the voltage at an edge ring relative to a substrate located on a substrate support assembly. The substrate support assembly has a body having a substrate support portion having a substrate electrode embedded therein for applying a substrate voltage to a substrate. The body of the substrate support assembly further has an edge ring portion disposed adjacent to the substrate support portion. The edge ring portion has an edge ring electrode embedded therein for applying an edge ring voltage to an edge ring. An edge ring voltage control circuit is coupled to the edge ring electrode. A substrate voltage control circuit is coupled to the substrate electrode. The edge ring voltage control circuit and the substrate voltage control circuit are independently tunable to generate a difference in voltage between the edge ring voltage and the substrate voltage.

A multi-beam apparatus for observing a sample with high resolution and high throughput and in flexibly varying observing conditions is proposed. The apparatus uses a movable collimating lens to flexibly vary the currents of the plural probe spots without influencing the intervals thereof, a new source-conversion unit to form the plural images of the single electron source and compensate off-axis aberrations of the plural probe spots with respect to observing conditions, and a pre-beamlet-forming means to reduce the strong Coulomb effect due to the primary-electron beam.

A decelerating electrode of an energy filter includes an electrode pair that has an opening and a cavity portion provided in a rotationally symmetrical manner with the center of the opening as the optical axis. Voltages with electric potentials that are substantially the same as that of a charged particle beam are independently applied to both sides of the decelerating electrode. When an electrical field protrudes into the cavity portion, a saddle point having the same electric potential as that of incident charged particles is formed inside the decelerating electrode. The saddle point acts as a high pass filter for incident charged particles at an energy resolution of 1 mV or less. By analyzing charged particles which have been energy-separated, it is possible to measure the energy spectrum and E at the high resolution of 1 mV or less and to obtain an SEM/STEM image with a high resolution.

A multi-beam apparatus for observing a sample with high resolution and high throughput and in flexibly varying observing conditions is proposed. The apparatus uses a movable collimating lens to flexibly vary the currents of the plural probe spots without influencing the intervals thereof, a new source-conversion unit to form the plural images of the single electron source and compensate off-axis aberrations of the plural probe spots with respect to observing conditions, and a pre-beamlet-forming means to reduce the strong Coulomb effect due to the primary-electron beam.