A system for generating an electron beam array, comprising a light source, a first substrate having a plurality of plasmonic lenses mounted thereon, the plasmonic lenses configured to received light from the light source and produce an electron emission, and a plurality of electrostatic microlenses configured to focus the electron emissions into a beam for focusing on a wafer substrate. A light source modulator and digital micro mirror may be included which captures light from the light source and projects light beamlets on the plasmonic lenses.

Provided is a method of adjusting an electron-beam irradiated area in an electron beam irradiation apparatus that deflects an electron beam with a deflector to irradiate an object with the electron beam, the method including: emitting an electron beam while changing an irradiation position on an adjustment plate by controlling the deflector in accordance with an electron beam irradiation recipe, the adjustment plate detecting a current corresponding to the emitted electron beam; acquiring a current value detected from the adjustment plate; forming image data corresponding to the acquired current value; determining whether the electron-beam irradiated area is appropriate based on the formed image data; and updating the electron beam irradiation recipe when the electron-beam irradiated area is determined not to be appropriate.

The present disclosure provides a treatment device for lowering electron affinity. The treatment device is capable of performing an electron affinity (EA) surface treatment on a photocathode material or an EA surface retreatment on a photocathode. The present disclosure also provides an electron-beam device provided with the treatment device. An activation chamber is used in a treatment device for lowering electron affinity by vaporizing a surface-treatment material and uses the vaporized surface-treatment material to perform an electron-affinity lowering treatment on a photocathode material or an electron-affinity lowering retreatment on a photocathode. The activation chamber includes one or more holes through which electrons can pass.

A scalable, integrated multi-level photoemitter device of tapered design and method of manufacture using conventional CMOS manufacturing techniques. The photoemitter device has a tapered multi-level structure formed in a material layer of a substrate, each level comprising a layer of photoemissive material and a connecting portion, said connecting portion for connecting to an adjacent photoemissive material layer of a next successive level. A first photoemissive material layer of a first level is of a configuration having a first length or width dimension; and each successive layer includes a photoemissive material layer of successively smaller length or width dimensions

This electron beam applicator includes: a light source; a photocathode; an anode; a detector; and a control unit. The photocathode receives two or more pulsed excitation light beams, and are emitted so that the excitation light beams are received by the photocathode at different timings, the control unit sets two or more irradiation regions and causes two or more pulsed electron beams formed in response to receiving the two or more pulsed excitation light beams of the different timings to be emitted to different irradiation regions, respectively, the detector generates detection signals by detecting, at different timings, pulsed emitted substances emitted from the different irradiation regions and outputs the generated detection signals in association with position information on the different irradiation regions, and the number of detectors is less than the number of electron beams emitted to the irradiation targets.

An electron emitter comprises a tapered-shaped emission tip having a base face and an apex opposite the base face, the emission tip consisting essentially of semiconductor material, the semiconductor material being partially doped n-type and partially doped p-type, wherein the base face is doped one of n-type or p-type and the apex is doped opposite type of the base face and a p-n junction is thereby formed at a position between the base face and the apex.

An electron beam emitted from a photoexcited electron gun is increased in luminance. An electron gun 15 includes: a photocathode 1 including a substrate 11 and a photoelectric film 10; a light source 7 that emits pulsed excitation light; a condenser lens 2 that focuses the pulsed excitation light toward the photocathode; and an extractor electrode 3 that faces the photocathode and that accelerates an electron beam generated from the photoelectric film by focusing the pulsed excitation light by the condenser lens, transmitting the pulsed excitation light through the substrate of the photocathode, and causing the pulsed excitation light to be incident on the photocathode. The pulsed excitation light is condensed at different timings at different positions on the photoelectric film of the photocathode.

A permanently sealed vacuum tube is used to provide the electrons for an electron microscope. This advantageously allows use of low vacuum at the sample, which greatly simplifies the overall design of the system. There are two main variations. In the first variation, imaging is provided by mechanically scanning the sample. In the second variation, imaging is provided by point projection. In both cases, the electron beam is fixed and does not need to be scanned during operation of the microscope. This also greatly simplifies the overall system.

The electron gun is provided with a first anode electrode and a second anode electrode to generate an acceleration and deceleration electric field. A lens electric field makes it possible to irradiate a sample with an electron beam emitted from a part outside an optical axis of the photoelectric film without being blocked by a differential exhaust diaphragm. A wide range of electron beams off-optical axis can be used even in a high-brightness photocathode that requires high vacuum. As a result, the photoelectric film and the electron gun can be extended in life, can be stabilized, and can be increased in brightness. Further, it is possible to facilitate a control of emitting electron beams from a plurality of positions on the photoelectric film, a timing control of emitting electron beams from a plurality of positions, a condition control of an electron beam in an electron microscope using electron beams.

A permanently sealed vacuum tube is used to provide the electrons for an electron microscope. This advantageously allows use of low vacuum at the sample, which greatly simplifies the overall design of the system. There are two main variations. In the first variation, imaging is provided by mechanically scanning the sample. In the second variation, imaging is provided by point projection. In both cases, the electron beam is fixed and does not need to be scanned during operation of the microscope. This also greatly simplifies the overall system.