An ion beam device according to the present invention suppresses the fluctuation of an ion emission current by cleaning the inside of a chamber without entailing wear damage to an emitter electrode. The ion beam device includes a GFIS including an emitter electrode having a needle-shaped tip; an extraction electrode having an opening at a position spaced apart from the tip of the emitter electrode; and a chamber encapsulating the emitter electrode therein. The GFIS includes an ionizable gas introduction path for introducing an ionizable gas into the chamber in a state where a voltage equal to or more than a beam generating voltage is applied to the emitter electrode; and a cleaning gas introduction path for introducing a cleaning gas into the chamber in either a state where a voltage less than the beam generating voltage is applied to the emitter electrode or a state where no voltage is applied to the emitter electrode. A pressure of the chamber with the cleaning gas introduced therein is higher than a pressure of the chamber when the ionizable gas is introduced therein.

According to an embodiment of the present invention, an ion beam apparatus switches between an operation mode of performing irradiation with an ion beam most including H.sub.3.sup.+ ions and an operation mode of performing irradiation with an ion beam most including ions heavier than the H.sub.3.sup.+.

In order to provide an ion beam apparatus excellent in safety and stability even when a sample is irradiated with hydrogen ions, the ion beam apparatus includes a vacuum chamber, a gas field ion source that is installed in the vacuum chamber and has an emitter tip, and gas supply means for supplying a gas to the emitter tip. The gas supply means includes a mixed gas chamber that is filled with a hydrogen gas and a gas for diluting the hydrogen gas below an explosive lower limit.

Provided is a tip capable of repeatedly regenerating a single-atom termination structure in which a distal end is formed of only one atom. A tip (1) having a single-atom termination structure includes: a thin line member (2) made of a first metal material; a protruding portion (4) made of a second metal material, which is formed at least in a distal end portion (2a) of the thin line member (2), and has a distal end terminated with only one atom; and a supply portion (5) made of the second metal material to be supplied to the protruding portion (4), which is formed in the vicinity of the distal end portion (2a) of the thin line member (2).

At timing t0, a brake gas (raw material gas) starts to be supplied to an ion beam generator, and the brake gas is fed into a turbo molecular pump. After timing t1, a vent valve is opened intermittently to feed atmospheric air into the turbo molecular pump. The brake gas may be different from the raw material gas. The brake gas is supplied using a gas supply system.

Provided is an ion implantation method. An ion implantation method according to an embodiment of the inventive concept may include providing a host material and a target into a chamber, the target comprising a first material; irradiating the target with a laser to generate an ion beam; and irradiating the host material with the ion beam to dope the host material with the first material, wherein while the host material is irradiated with the ion beam, the host material is rotated.

In order to provide an ion beam apparatus excellent in safety and stability even when a sample is irradiated with hydrogen ions, the ion beam apparatus includes a vacuum chamber, a gas field ion source that is installed in the vacuum chamber and has an emitter tip, and gas supply means for supplying a gas to the emitter tip. The gas supply means includes a mixed gas chamber that is filled with a hydrogen gas and a gas for diluting the hydrogen gas below an explosive lower limit.

In order to provide an ion beam apparatus excellent in safety and stability even when a sample is irradiated with hydrogen ions, the ion beam apparatus includes a vacuum chamber, a gas field ion source that is installed in the vacuum chamber and has an emitter tip, and gas supply means for supplying a gas to the emitter tip. The gas supply means includes a mixed gas chamber that is filled with a hydrogen gas and a gas for diluting the hydrogen gas below an explosive lower limit.

A terminal for an ion implantation system is provided, wherein the terminal has a terminal housing for supporting an ion source configured to form an ion beam. A gas box within the terminal housing has a hydrogen generator configured to produce hydrogen gas for the ion source. The gas box is electrically insulated from the terminal housing, and is further electrically coupled to the ion source. The ion source and gas box are electrically isolated from the terminal housing by a plurality of electrical insulators. A plurality of insulating standoffs electrically isolate the terminal housing from an earth ground. A terminal power supply electrically biases the terminal housing to a terminal potential with respect to the earth ground. An ion source power supply electrically biases the ion source to an ion source potential with respect to the terminal potential. Electrically conductive tubing electrically couples the gas box and ion source.

An ion source includes an external housing, an electrically conductive tip, a gas supply system, configured to supply an operating gas into the neighborhood of the tip, and a cooling system configured to cool the tip. The gas supply system includes a first tube with a hollow interior, and a chemical getter material is provided in the hollow interior of the tube.