An improved ANAB system or process substantially or fully eliminating contaminant particles from reaching a beam target by adding to the usual primary (first) ionizer of the ANAB system or process an additional (second) ionizer to ionize contaminant particles and means to block or retard the ionized particles to prevent their reaching the beam target.

A charged particle beam apparatus has a chamber configured to accommodate a sample with. An inside of the chamber is decompressed. A tube having an opening is disposed in the chamber, and introduces a mixed gas having a plurality of types of gases, in a direction towards the sample. A first beam generator emits a charged particle beam toward at least one of a region between an opening of the tube and the sample, or a region of the sample against which the mixed gas collides. A mixed gas generator provides the mixed gas to the tube. The opening of the tube has an elongated shape in a cross section in a direction substantially perpendicular to a flow direction of the mixed gas.

An IHC ion source that employs a negatively biased cathode and one or more side electrodes is disclosed. The one or more side electrodes are biased using an electrode power supply, which supplies a voltage of between 0 and −50 volts, relative to the chamber. By adjusting the output from the electrode power supply, beam current can be optimized for different species. For example, certain species, such as arsenic, may be optimized when the side electrodes are at the same voltage as the chamber. Other species, such as boron, may be optimized when the side electrodes are at a negative voltage relative to the chamber. In certain embodiments, a controller is in communication with the electrode power supply so as to control the output of the electrode power supply, based on the desired feed gas.

An ion source including a chamber housing defining an ion source chamber and including an extraction plate on a front side thereof, the extraction plate having an extraction aperture formed therein, and a tubular cathode disposed within the ion source chamber and having a slot formed in a front-facing semi-cylindrical portion thereof disposed in a confronting relationship with the extraction aperture, wherein a rear-facing semi-cylindrical portion of the tubular cathode directed away from the extraction aperture is closed.

An ion source including a chamber housing defining an ion source chamber and including an extraction plate on a front side thereof, the extraction plate having an extraction aperture formed therein, and a tubular cathode disposed within the ion source chamber and having a slot formed in a front-facing semi-cylindrical portion thereof disposed in a confronting relationship with the extraction aperture, wherein a rear-facing semi-cylindrical portion of the tubular cathode directed away from the extraction aperture is closed.

An ion source is provided that includes a gas source for supplying a gas, and an ionization chamber defining a longitudinal axis extending therethrough and including an exit aperture along a side wall of the ionization chamber. The ion source also includes one or more extraction electrodes at the exit aperture of the ionization chamber for extracting ions from the ionization chamber in the form of an ion beam. At least one of the extraction electrodes comprises a set of discrete rods forming a plurality of slits in the at least one extraction electrode for enabling at least one of increasing a current of the ion beam or controlling an angle of extraction of the ion beam from the ionization chamber. Each rod in the set of discrete rods is parallel to the longitudinal axis of the ionization chamber.

The invention provides an electron-impact ion source device having high brightness as compared to known Nier-type ion sources, while providing similar advantages in terms of flexibility of the generated ion species, for example. The ionization chamber of the device operates at high pressures and provides for a large number of interactions between the electron beam and the gas molecules.

An ion generator includes an arc chamber defining a plasma generation space, and a cathode which emits thermoelectrons toward the plasma generation space. The arc chamber includes a box-shaped main body having an opening, and a slit member mounted to cover the opening and provided with a front slit. An inner surface of the main body is exposed to the plasma generation space made of a refractory metal material. The slit member includes an inner member made of graphite and an outer member made of another refractory metal material. The outer member includes an outer surface exposed to an outside of the arc chamber. The inner member includes an inner surface exposed to the plasma generation space, and an opening portion which forms the front slit extending from the inner surface of the inner member to the outer surface of the outer member.

An ion source with a target holder for holding a solid dopant material is disclosed. The ion source comprises a thermocouple disposed proximate the target holder to monitor the temperature of the solid dopant material. In certain embodiments, a controller uses this temperature information to vary one or more parameters of the ion source, such as arc voltage, cathode bias voltage, extracted beam current, or the position of the target holder within the arc chamber. Various embodiments showing the connections between the controller and the thermocouple are shown. Further, embodiments showing various placement of the thermocouple on the target holder are also presented.

An apparatus for ion implantation is disclosed. The apparatus comprising an arc chamber and an electron source device. The electron source device includes a cathode and a filament. The filament is disposed within the cathode. The cathode has a body and a cap disposed over the body. The cap has a receiving surface and a emitting surface opposite the receiving surface. The emitting surface has a convex shape facing the receiving area of the arc chamber and the receiving surface has a conical shape where a center area is a flat surface and the center area being surrounded by a tapered sidewall.